SOT121 PACKAGE Search Results

Contextual Info: Concise Catalogue 1996 Philips Semiconductors DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES RF POWER MOS TRANSISTORS type number PL PEP ^DS (W) (V) G p (dB) package 20.1) 23 20.1) 17 20 SOT123 SOT 123 SOT121 SOT121

BLF246

Abstract: SOT121 Package marking c8 transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF246 VHF power MOS transistor Product specification Supersedes data of September 1992 1996 Oct 21 Philips Semiconductors Product specification VHF power MOS transistor BLF246 FEATURES PINNING - SOT121 • High power gain

sot123 package

Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123
Contextual Info: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ

SOT123 Package

Abstract: BLV62 BLW33 BLX98 BLF147 BLF175 SOT-48 bfr96s SOT123
Contextual Info: 64 RF/Microwave Devices Bipolar RF Transmitting Transistors TV Transposers/Transmitters co n t. Type No. Output Power @ djm Package Outline SYNC (W) (dB) Output Power P0 - IdB (W) Power Gain (dB) Supply Voltage (V) 115 225 11 9.0 28 35 10 11 11 6 10 10 5.5

sot123 package

Abstract: sot123 SOT-123 philips blx15 blx13 BLW50F sot122f Blx15 philips BLW96
Contextual Info: Philips Semiconductors Concise Catalogue 1996 RF & MICROWAVE SEMICONDUCTORS & MODULES DISCRETE SEMICONDUCTORS RF power transistors BIPOLAR RF TRANSMITTING TRANSISTORS HF SINGLE SIDEBAND 1.5 - 30 MHz BIPOLAR TRANSISTORS • Very wide range of devices with supply voltages

T119 A

Abstract: sot 122 SOT123 Package BLW78
Contextual Info: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain

BLY93A

Abstract: blw79 SOT123 Package BLW80 BLV11 BFS22A BLY94 BLY93C bly88
Contextual Info: 60 RF/Microwave Devices Bipolar RF Transmitting Transistors VHF 25175M H z Package Outline Type No. Load Power W @ 175MHz Power Gain (dB) @ 175MHz Supply Voltage (V) 0.7 1.5 3 9 8 8.4 9.4 7.4 7.5 7.5 7.5 7.5 1 2 2 4 4 4 4 8 8 8 10 15 15 15 15 25 25 28 30

SOT123 Package

Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Transistors for HF and VHF 1995 Nov 21 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF Selection guide INTRODUCTION The following tables represent our complete range of bipolar and MOS transmitting transistors, grouped according to the

SOT123 Package

Contextual Info: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES VHF 25 - 175 MHz BIPOLAR TRANSISTORS continued type number load power @ 175 MHz W power gain @ 175 MHz (dB) supply voltage

t123

Abstract: BLW50F T121 BLW77
Contextual Info: 59 RF/Microwave Devices Bipolar RF Transm itting Transistors The P h ilip s range of fixed/m obile radio and transposer/transm itting transistors is one of the w idest available, with frequencies from 150 kHz to 1.5 GHz, output pow ers from 100 m W to 300W and over thirty package options.

BA101D

Abstract: J04075 sars0 S0146 2N5529 2N6482 B40-12A SGSIF464 TIP542 acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC3748 BOlllA BOlllA 2N5327 SFT6200 (A) 2N5328 SMl2168 BU100A ~~~~~-O5 25 30 SVT250-05 SVT250-05 SVT300-05 SVT300-05 SVT300-05 S01457 2S01443 2S01445 2SD~:5A 35 40 TIP543 TIP543 2N5940 2N5939 TIP542

marking code 7Gs

Abstract: 3 DG 1008 BLF147 71005 philips resistor 2322-153 SOT121 Package
Contextual Info: Product «pacification Philips Semiconductor» T -J ^ ~ /5 B L F 1 4 7 VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • 5bE D • 711Dfl2b 0DM3703 27T BIPHIN PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control

Contextual Info: Philips Semiconductors WM bb 5 3 R 31 Q02RR6Q 536 M APX Product specification VHF power MOS transistor BLF246 N AUER PHILIPS/DISCRETE FEATURES bRE PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

choke marking nb 03

Abstract: SOT121 Package BLF246
Contextual Info: Philips Semiconductors a tiS 3 R 3 1 0 0 5 TRÔD 536 APX Product specification VHF power MOS transistor BLF246 b'ìE i> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

SOT333

Abstract: SOT423 sot468 thermal compound wps II TO metal package aluminum kovar SOT439 Transistor Packages sot262 SOT443 rf transistor smd pages
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 4 RF and microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages of electronic devices are, in general, designed to: metal cap – Protect the electronics from mechanical damage

Contextual Info: Philips Semiconductors • I bbS3T31 DDS^flSS MTl M A P * Product specification BLF147 VHF power MOS transistor - AnER PHIi-lPS/]>ISCRETE FEATURES bTE J> PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability

BLF177

Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244
Contextual Info: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control

Philips 2222 capacitor

Abstract: philips capacitor philips capacitor 2222
Contextual Info: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control

BLF147

Abstract: resistor gp series 71005 transistor d1 391 SOT121B SOT121 Package
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF147 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF147 PIN CONFIGURATION • High power gain • Low intermodulation distortion

FDV302P

Contextual Info: g A Ig g H IU D SEMICONDUCTOR tm FDV302P Digital FET, P-Channel General Description Features This P-Channel logic level enhanœmenî mode field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is

BLW96

Contextual Info: ].£.I±£.L ^zml-t-onauckoi iJ^iodueti, Line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

Contextual Info: .O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLF147 VHP power MOS transistor PIN CONFIGURATION FEATURES • High power gain « Low intermodulation distortion • Easy power control • Good thermal stability

BLF177

Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability

BLF177

Abstract: SOT121 Package 727 Transistor power values 2222 122 capacitor philips transistor marking code HF MGP100 2222 632 series capacitor 2222 852 47103
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION