SOT23 JEDEC STANDARD 178 AB Search Results

Contextual Info: CM1218 Low Capacitance Transient Voltage Suppressors / ESD Protectors Description The CM1218 family of devices features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which may be subjected to electrostatic

Contextual Info: CM1218 Low Capacitance Transient Voltage Suppressors / ESD Protectors Description The CM1218 family of devices features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which may be subjected to electrostatic

M24B SOT23

Abstract: qsc 1110 GTLP16612 GTLP16616 GTLP16617 MQA20 MQA24 soic 16 Jedec package outline
Contextual Info: Revised February 2001 Interface Products Ordering Information and Physical Dimensions Interface Products Ordering Information GTLP/USB Products Ordering Information Note: The GTLP16612, GTLP16616, GTLP16617 do not use the device type numbering scheme, please see datasheets for specific ordering information.

1937 sot23

Contextual Info: DBV 6 DBV 5 YEQ, YZQ TPS793xx www.ti.com SLVS348K – JULY 2001 – REVISED OCTOBER 2007 ULTRALOW-NOISE, HIGH PSRR, FAST RF 200mA LOW-DROPOUT LINEAR REGULATORS IN NanoStar WAFER CHIP SCALE AND SOT23 FEATURES DESCRIPTION 1 • 200mA RF Low-Dropout Regulator

MPSA65

Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

25c reference top mark sot23

Abstract: sot23 A63
Contextual Info: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

DVD player with usb circuit diagram

Abstract: 320 sot236 CM1223-04SO Marking L2 Packaging SOT23-6 d337 diode marking L2 SOT23 6 zener D335 A0 SOT23-6
Contextual Info: CM1223 Industry First Low Capacitance ESD Protection Arrays with Backdrive Protection Product Description The CM1223 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting

Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

BEL 188 pnp TRANSISTOR characteristics

Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
Contextual Info: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

transistor bel 100

Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Contextual Info: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol

JEDEC Matrix Tray outlines

Abstract: ti packing label dck3 QFP Shipping Trays tray bga 64 EIA-468 label location EIA standards 783 EIA-481-x dbv4 EIA-783
Contextual Info: Application Report SZZA021C − September 2005 Semiconductor Packing Methodology Cles Troxtell, Bobby O’Donley, Ray Purdom, and Edgar Zuniga Standard Linear & Logic ABSTRACT The Texas Instruments Semiconductor Group uses three packing methodologies to prepare

BEL 188 pnp TRANSISTOR characteristics

Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
Contextual Info: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

712 DIODE marking sot23

Abstract: 712 SOT23
Contextual Info: NT IA PL M CO S oH *R Features • ■ ■ ■ Applications RoHS compliant* Working peak voltage 7 V or 12 V ESD protection 30 kV max. Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 — Surface Mount TVS Diode

TVS SOT23 712

Abstract: CDSOT23-SM712 712 sot23
Contextual Info: NT IA PL M CO S oH *R Features • ■ ■ ■ Applications RoHS compliant* Working peak voltage 7 V or 12 V ESD protection 30 kV max. Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 — Surface Mount TVS Diode

TVS SOT23 712

Abstract: 712 DIODE marking sot23 SM712 CDSOT23-SM712 712 sot23
Contextual Info: PL IA NT CO M *R oH S Features • ■ ■ ■ Applications RoHS Compliant* Working peak voltage 7 V or 12 V ESD protection >40 kV Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 – Surface Mount TVS Diode

2n4416 and application note

Abstract: TSSOP-8 footprint and soldering sot-23 2N4416 equivalent Siliconix sot23 marking THERMAL SWITCH SC-75A sot-23 Marking N2 699 marking code sot23-5 marking code v6 SOT23 V30114 marking code 20L sot-23 sot23
Contextual Info: 2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 −v6 −30 4.5 5 2N4416A −2.5 to −6 −35 4.5 5 SST4416 −v6 −30 4.5 5 FEATURES BENEFITS D Excellent High-Frequency Gain:

MPSA06

Abstract: MPSA06 fairchild transistor PZTA06 SOT-223 LA 3843 CBVK741B019 F63TNR MMBTA06 PN2222N PZTA06 mark 116 sot
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

bel 188 transistor

Abstract: CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Contextual Info: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol

bel 188 transistor

Abstract: MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D
Contextual Info: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

CBVK741B019

Abstract: F63TNR MMBTA42 MPSA42 PN2222N PZTA42
Contextual Info: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*

MPSA42

Abstract: FAIRCHILD SOT-223 MARK CBVK741B019 F63TNR MMBTA42 PN2222N PZTA42 mpsa42 "sot23"
Contextual Info: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*

Contextual Info: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

MPSA42

Abstract: MPSA42 sot-223 CBVK741B019 F63TNR MMBTA42 PN2222N PZTA42 bsrxx
Contextual Info: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*

zener D335

Abstract: Marking L2 Packaging SOT23-6 Marking X1 SOT23-6 X130 SOT23-5 marking L2 SOT23-6 Zener diode sot23-5 sot23-6 marking code 013 Marking L2 Packaging SOT23-5
Contextual Info: CM1223 Industry First Low Capacitance ESD Protection Arrays with Backdrive Protection Product Description The CM1223 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting