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    SOT23 N 09 Search Results

    SOT23 N 09 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    SOT23 N 09 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ST2N

    Abstract: 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97
    Text: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET Features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application ■ Switching applications


    Original     		PDF 2N7000 2N7002 OT23-3L OT23-3L ST2N 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97

    2N7000 MOSFET

    Abstract: 2n7000 equivalents 2N7000 2N7002 MARKING 2n7000 equivalent 2N7000G 2N7002 JESD97
    Text: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Description This MOSFET is the second generation of


    Original     		PDF 2N7000 2N7002 OT23-3L OT23-3L 2N7000 MOSFET 2n7000 equivalents 2N7000 2N7002 MARKING 2n7000 equivalent 2N7000G 2N7002 JESD97

    marking BS SOT23

    Abstract: 2N7000 circuits
    Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application


    Original     		PDF 2N7000 2N7002 OT23-3L, OT23-3L marking BS SOT23 2N7000 circuits

    ST2N

    Abstract: 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97
    Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application


    Original     		PDF 2N7000 2N7002 OT23-3L, OT23-3L ST2N 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97

    BF862

    Abstract: BP317 MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Preliminary specification 1999 Jun 29 Philips Semiconductors Preliminary specification N-channel junction FET BF862 PINNING SOT23 FEATURES • High transition frequency for excellent sensitivity in


    Original     		PDF M3D088 BF862 MSB003 125004/00/01/pp7 BF862 BP317 MSB003

    BST82

    Abstract: HZG303
    Text: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.


    Original     		PDF BST82 BST82 03ab44 HZG303

    BSN20

    Abstract: No abstract text available
    Text: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.


    Original     		PDF BSN20 BSN20 03ab44

    2N7002 Philips

    Abstract: 03aa03 philips 2n7002
    Text: 2N7002 N-channel enhancement mode field-effect transistor Rev. 03 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7002 in SOT23.


    Original     		PDF 2N7002 2N7002 03ab44 2N7002 Philips 03aa03 philips 2n7002

    Untitled

    Abstract: No abstract text available
    Text: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.


    Original     		PDF BST82 BST82 03ab44

    BSN20

    Abstract: HZG303
    Text: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.


    Original     		PDF BSN20 BSN20 03ab44 HZG303

    03aa03

    Abstract: No abstract text available
    Text: PMBF170 N-channel enhancement mode field-effect transistor Rev. 03 — 23 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PMBF170 in SOT23.


    Original     		PDF PMBF170 PMBF170 03ab44 03aa03

    BSH111

    Abstract: MSB003
    Text: BSH111 N-channel enhancement mode field-effect transistor Rev. 01 — 07 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH111 in SOT23.


    Original     		PDF BSH111 BSH111 MSB003 MSB003

    BSH112

    Abstract: No abstract text available
    Text: BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH112 in SOT23.


    Original     		PDF BSH112 M3D088 BSH112

    MSB003

    Abstract: SI2302DS
    Text: SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 — 20 November 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: SI2302DS in SOT23.


    Original     		PDF SI2302DS M3D088 SI2302DS MSB003. MSB003

    Untitled

    Abstract: No abstract text available
    Text: BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: BSH111 in SOT23.


    Original     		PDF BSH111 M3D088 BSH111 MSB003

    BF862

    Abstract: marking code 2Ap fet junction n-channel transistor transistor 2ap Silicon N-Channel Junction FET sot23 fet-bf862 10102F SOT-23 marking code 2ap
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 Philips Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in


    Original     		PDF M3D088 BF862 MAM036 125004/03/pp12 BF862 marking code 2Ap fet junction n-channel transistor transistor 2ap Silicon N-Channel Junction FET sot23 fet-bf862 10102F SOT-23 marking code 2ap

    2N7002F

    Abstract: SP SOT23 2N7002* application
    Text: 2N7002F TrenchMOS Logic Level FET Rev. 01 — 11 February 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7002F in SOT23. 2. Features


    Original     		PDF 2N7002F M3D088 2N7002F 03ab44 SP SOT23 2N7002* application

    philips 2n7002e

    Abstract: No abstract text available
    Text: 2N7002E TrenchMOS Logic Level FET Rev. 01 — 11 February 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7002E in SOT23. 2. Features


    Original     		PDF 2N7002E M3D088 2N7002E 03ab44 philips 2n7002e

    Untitled

    Abstract: No abstract text available
    Text: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA


    OCR Scan     		PDF 350mA 380MHz 650MHz 600MHz 200mA 300MHz 100mA

    ZO diode

    Abstract: SOT230 SMSD3004
    Text: TflEj metelics SURFACE M O U N T SOT23 A N D S O D 323 SCHOTTKY MIXERS A N D DETECTOR DIODES * CORPORATION FEATURES Surface Mount Package Tape a n d Reel A vailable Reliability G old M etallized Chip Silicon N itride/O xide Passivation Low Series Resistance


    OCR Scan     		PDF OD323 ZO diode SOT230 SMSD3004

    bf862

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BF862 N-channel junction FET Objective specification Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Objective specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in


    OCR Scan     		PDF BF862 MSB003 bf862

    BT5401

    Abstract: No abstract text available
    Text: Transistors Reel = 500pcs, Bag = lOOpcs. SOT23 Case NPN T ype m iniR eel O rd e r N um ber N P N H ig h F req u en cy BF840 73-8400 BF841 73-8410 M M BTH 10 73-0010 M M BT918 73-0918 N P N L ow N ise M M BT5089 73-5089 M M BT5088 73-5088 BC850B 73-8501 B C850C


    OCR Scan     		PDF 500pcs, BF840 BF841 BT918 BT5089 BT5088 BC850B C850C BT2484 SR19A BT5401

    SMSD3012

    Abstract: No abstract text available
    Text: SURFACE M O U N T SOT23 A N D S O D 323 SCHOTTKY MIXERS A N D DETECTOR DIODES metelics CORPORATION MAXIMUM RATINGS PACKAGE CHARACTERISTICS Operating/Storage Temperature R a n g e -65°C to +150°C Max Power Dissipation per P a c k a g e .250mW


    OCR Scan     		PDF 250mW SMST3012 SMST4012 SMST6012 SMST3004 SMST4004 SMST6004 SMSD3012 SMSD4012 SMSD6012

    SMPN7316

    Abstract: DIODE Z0 031
    Text: met SURFACE M O U N T SOT23 SMPN SERIES PIN DIODES FOR RF SW ITC H IN G A N D ATTENUATING CORPOI FEATURES Surface Mount Package Tape anc! Reel A vailable Reliability G old M etallized Chip Silicon Nitride/Glass Passivation Low Series Resistance Low Capacitance


    OCR Scan     		PDF OT-23 SMPN7316 DIODE Z0 031