SOT288D Search Results

Contextual Info: Philips Components Datasheet status Preliminary specification date of issue May 1991 BGY113A/113B UHF amplifier modules PINNING - SOT288D DESCRIPTION A range of RF power amplifier modules designed for use in portable communications equipment with nominal 7.5 V electrical battery

VS4 TRANSISTOR

Abstract: Philips DC Power Amplifier 380 TT 2222 npn 2322*195 transistor tt 2222 r5 t85 BGY113A BGY113B SOT288D mgd502
Contextual Info: Preliminary specification Philips Semiconductors UHF amplifier modules BGY113A; BGY113B PINNING - SOT288D FEATURES • 7.5 V nominal supply voltage DESCRIPTION PIN • 7 W output power 1 RF input • Easy control of output power by DC voltage. 2 VSi 3 VC APPLICATIONS

Contextual Info: N AUER PHILIPS/DISCRETE b^E » • bb53*J31 0030363 bS3 Philips Components BGY113A/113B Datasheet status P r e lim in a r y s p e c ific a tio n date of issue May 1991 UHF amplifier modules PINNING - SOT288D DESCRIPTION A range of RF power amplifier modules designed for use in

BGY113A

Abstract: BGY113B
Contextual Info: N AUER PHILIPS/DISCRETE t.'ÌE » • tbS3*î31 Q03G5Û3 b53 H A P X Philips Components BGY113A/113B Datasheet status Preliminary specification date of issue May 1991 UHF amplifier modules PINNING - SOT288D DESCRIPTION A range of RF power amplifier modules designed for use in

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic rectangular single-ended flat package; flange mounted; 2 mounting holes; 7 in-line leads SOT288D D A F y U q A U2 E p U1 L 1 2 3 e e 4 5 6 7 bp e e1 e1 c v A w M e1 Q Z 10 20 mm scale DIMENSIONS mm are the original dimensions

bgy113f

Abstract: BGY113E SOT321 RF Power Modules BGY113G BGY204 BGY113B BGY133 SOT246 SOT342
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Modules and Transistors for Mobile Phones 1996 Jun 19 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones Selection guide VHF CAR MOBILE

Contextual Info: RF Power Modules INDEX SELECTION GUIDE GENERAL CONTENTS Page 5 8 12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

MBD677

Abstract: BGY113A BGY113B SC09 VS4 TRANSISTOR Philips DC Power Amplifier 380
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY113A; BGY113B UHF amplifier modules Preliminary specification Supersedes data of April 1994 File under Discrete Semiconductors, SC09 1996 May 29 Philips Semiconductors Preliminary specification UHF amplifier modules BGY113A; BGY113B

RF Power Modules

Abstract: BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132
Contextual Info: Philips Semiconductors RF power modules Type number survey INTRODUCTION In this alphanumeric list we present all RF power modules mentioned in this handbook, together with the most important data. TYPE NUMBER ENVELOPE Vs V f Pl (MHz) (W) Gp (dB) PAGE BGY32

BGY113A

Abstract: "Amplifier Modules" BGY113B FERROXCUBE 4330 Outline T39 uhf amplifier BGY113C MSB043
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier modules BGY113A; BGY113B; BGY113C FEATURES DESCRIPTION • 7.5 V nominal supply voltage The BGY113A, BGY113B and BGY113C are UHF power amplifier modules. • 7 W output power Each module consists of four NPN silicon P lanartransistor

BGY113B

Abstract: BGY113A BGY113C FERROXCUBE 4330
Contextual Info: Preliminary specification Philips Semiconductors UHF amplifier modules BGY113A; BGY113B; BGY113C FEATURES DESCRIPTION • 7.5 V nominal supply voltage The BGY113A, BGY113B and BGY113C are UHF power amplifier modules. • 7 W output power Each module consists of four NPN silicon Planartransistor

"RF Power Modules"

Abstract: RF Power Modules MSA352 MM 4054 SC09 philips rf transistors modules RF index MLB442 sot132 sot278
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Modules and Transistors for Mobile Phones Product specification File under Discrete Semiconductors, SC09 1996 May 29 Philips Semiconductors Product specification RF Power Modules and Transistors for

SOT262

Abstract: power amplifier blf278 BLF378 BGY47 321 SOT BGY145 sot183 BGY43 SOT246
Contextual Info: 66 RF/Microwave Devices RF Power MOS Transistors Package Outline Type No. cont. Output Power Sync (W) VDS (V) f (MHz) Power Gain (dB) ^im (dB) >D (mA) 13 r -52 -52 3000 2 x 4600 50 TV TRANSPOSERS (band 3, f = 174-230 MHz, Class A Operation) BLF346 BLF348

Philips Semiconductors RF Power Modules

Abstract: RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"
Contextual Info: Philips Semiconductors RF power modules Selection guide INTRODUCTION The following tables represent our complete range of RF power modules. VHF modules for mobile transminers f MHz Pl (W) Vs (V) 18 12.5 68 to 88 18 12.5 80 to 108 18 12.5 132 to 156 18 12.5