SOT416 Search Results

Contextual Info: Package outline Plastic surface-mounted package; 3 leads SOT416 B D A E v X HE A 3 Q A 1 A1 2 e1 c bp w B Lp e detail X 1 mm scale Dimensions Unit 1 max nom min mm A 0.9 0.6 A1 0.1 D E 0.30 0.25 1.8 0.9 0.15 0.10 1.4 0.7 bp c e e1 1 0.5 HE Lp Q 1.75 0.45 0.23

BAV70TGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD BAV70TGP SURFACE MOUNT SWITCHING DIODE VOLTAGE 75 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching SC-75/SOT-416 FEATURE * Small surface mounting type. SC-75/SOT416 * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density.

PEMH15

Abstract: PBLS4003V PEMB10 PEMD4 PEMB20 PEMD13 PEMB15 PEMB16 PEMB18 PBLS1503V
Contextual Info: Semiconductors Date of release: December 2004 Philips’ portfolio in SOT663, SOT665 and SOT666 packages General features Portfolio overview • • • • • • • • • • • Package available with 3, 5 and 6 flatleads Body height of 0.55 mm PCB area comparable with SOT416 SC-75

smd code marking ID

Abstract: NXP SMD DIODE MARKING CODE T4 NX3008PBKT
Contextual Info: SO T4 16 NX3008PBKT 30 V, 200 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T4 16 PMR670UPE 20 V, 480 mA P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

marking TB

Contextual Info: CHENMKO ENTERPRISE CO.,LTD BAV70TPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 75 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching SC-75/SOT-416 FEATURE * Small surface mounting type. SC-75/SOT416 * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density.

transistor t07

Abstract: mar-06 transistor "MARKING CODE V2" "marking Code" V2 marking code V2 MRC050 BFQ67T SC-75 transistor 15 GHz transistor 20 dB 14 ghz
Contextual Info: Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain NPN transistor in a plastic SOT416 SC-75 package. • Low noise figure • High transition frequency • Gold metallization ensures

Contextual Info: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

SC-75

Abstract: SOT-416
Contextual Info: Package outline Philips Semiconductors Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0.5 1 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60

CHDTA123EEGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA123EEGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-75/SOT-416 * Small surface mounting type. SC-75/SOT416

Contextual Info: BAT54T Single Schottky barrier diode Rev. 01 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT416 SC-75 ultra small Surface-Mounted Device (SMD) plastic

PMR280UN

Abstract: PMR370XN PMR290XN PMR400UN PMR780SN SC75 SC-75 SC89
Contextual Info: 20 V, 30 V and 60 V N-channel MOSFETs in SOT416 SC-75 A new dimension in power Leading the way in miniaturization and Trench technology, NXP’s innovative TrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers demand smaller, efficient

2N7002BKT

Abstract: marking code Z3
Contextual Info: 2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

TRANSISTOR SMD MARKING CODES

Abstract: PBSS2515E PBSS3515E SC-75 MARKING CODE SMD IC
Contextual Info: PBSS2515E 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 01 — 18 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBSS3515E.

TRANSISTOR SMD MARKING CODE LF

Abstract: smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1
Contextual Info: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features „ Low current (max. 150 mA) „ Low voltage (max. 50 V)

Contextual Info: SO T4 16 NX3020NAKT 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

SCD-80

Abstract: SCD80 DIODE smd marking A4 BAW222 BAV222 BCR108T SC75 SC79
Contextual Info: BAV222/BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAV222

smd transistor A4S

Abstract: a4s smd transistor smd transistor A1s smd A1s A1s SMD smd a4s transistor A4s smd SMD A1S datasheet BAW222 Z10C
Contextual Info: BAV222 / BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) BAV222 BAW222 ! ,  ! ,  ,  ,  Type BAV222* BAW222* Package SC75 SC75 Configuration

SOT416

Abstract: SOT-416 SC-75 02 sot416
Contextual Info: Package outline Philips Semiconductors Plastic surface-mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0.5 1 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60

CHDTC114WEGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC114WEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-75/SOT-416 * Small surface mounting type. SC-75/SOT416

SC-75

Contextual Info: 2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

BAT54T

Abstract: SC-75
Contextual Info: BAT54T Single Schottky barrier diode Rev. 01 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT416 SC-75 ultra small Surface-Mounted Device (SMD) plastic

SOT-416

Abstract: SC-75
Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0.5 1 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp c D E e e1 HE Lp

PBSS2515E

Abstract: PBSS3515E SC-75 MARKING CODE SMD IC
Contextual Info: PBSS3515E 15 V, 0.5 A PNP low VCEsat BISS transistor Rev. 02 — 27 April 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.