SOT8 Search Results

TRANSISTOR SMD CODE PACKAGE SOT89 4

Contextual Info: PBSS5240X 40 V, 2 A PNP low VCEsat BISS transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:

FCX558TA

Abstract: FCX458
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

53Z Zetex

Abstract: 1a SOT89 IC35
Contextual Info: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

FCX718TA

Abstract: FCX718
Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX718 ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 6A Peak Pulse Current Excellent HFE Characteristics up to 6Amps Extremely Low Saturation Voltage E.g. 16mv Typ. Extremely Low Equivalent On-resistance;

walkie talkie circuit

Abstract: BAP1321LX BAP64LX BAP65LX BAP142LX BAP50LX BAP51LX BAP55LX BAP63LX walkie-talkie
Contextual Info: RF PIN diodes in leadless SOD882T Boost RF performance and reduce system size Deliver the maximum performance and functionality in the smallest space with our new RF PIN diodes in SOT882T. These unique products enhance the RF performance of your system while

EPA240D-SOT89

Abstract: EPA240D EPA240
Contextual Info: Excelics EPA240D-SOT89 DATA SHEET DC-6GHz High Efficiency Heterojunction Power FET Features    '5$,1 6285&      (Top View All Dimensions In Mils Applications • • •  $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE

SOT539A

Abstract: SOT975B SOT540A SOT538A sot538b sot988 SOT608B
Contextual Info: Air-cavity plastic packages SOT987B SOT895A Bias/temperature sensing SOT981A SOT988B SOT896B Bias/temperature sensing SOT986B Push-pull configuration SOT982A MMIC configuration SOT980A SOT1015BG Bias/temperature sensing Increase the flexibility of application-specific design by using LDMOS RF power

PBHV9040T

Abstract: piezo actuator driver PBHV9040Z PBHV8115T PBHV8540T PBHV8540Z PBHV9115T PMBTA44 SC-73 PBHV8115X
Contextual Info: NXP BISS high voltage transistors in SOT23, SOT89 SC-62 and SOT223 (SC-73) Boost performance with BISS HV technology Helping you keep ahead of increasing demands on system performance, our latest series of BISS (Breakthrough In Small-Signal) high voltage transistors

PBSS302NX

Abstract: PBSS301NX PBSS303NX PBSS4250X PBSS4320X PBSS4330X PBSS4350X PBSS4520X PBSS4540X mse267
Contextual Info: Ultra low VCEsat BISS transistors in SOT89 (SC-62) 5.3 A continuous collector current in small medium power package Looking to reduce power consumption and create smaller end products? Then look no further than NXP ultra low VCEsat (BISS) transistors in SOT89 (SC-62). Housed in a medium-power package, these

EFA480C-SOT89

Contextual Info: Excelics EFA480C-SOT89 DATA SHEET DC-4GHz Low Distortion GaAs Power FET Features     '5$,1 6285&     (Top View All Dimensions In Mils Applications • •  $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE

TK10485M

Abstract: TK16203U TK14521 TK16202U MFP-12 tk14521m TK10489M TK10485 TK10492 MFP36
Contextual Info: 27 INTEGRATED CIRCUITS TOKO U. Kl M ï f i ICs for Communications Equipment üimfflic Surface Mounting Taping 9 .5 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • • FM IF system IC for use In cordless phones, amateur radios up to

FPD750SOT89

Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
Contextual Info: SOT89 SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

sot86

Abstract: SGC-2486Z GaN hemt D7628
Contextual Info: SGC-2486Z SGC-2486Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT86 Product Description Features RFMD’s SGC-2486Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The

0603 footprint IPC

Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Contextual Info: SOT89 SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

40530 transistor

Abstract: MMA701-SOT89TR 7905 sot89 MMA 7815 MMA701 MMA701-SOT89 AN 7591 POWER AMPLIFIER PH 0852 7814 transistor AN 7591
Contextual Info: MMA701-SOT89 High Linearity Packaged HBT FEATURES • • • • G +45 dBm IP3 at 2.1 GHz +25 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 4000 MHz Operation MMA 701 The MMA701 is an InGaP Heterojunction Bipolar Transistor (HBT)

BUX100

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.

690 lc

Abstract: BUW14
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

Contextual Info: PC board footprint Philips Semiconductors Footprint information for reflow soldering of HSSON18 package SOT810-1 0.55 1.55 1.00 11x 2.55 4.80 6.40 9.00 9.25 8.30 3.40 1.50 0.95 1.05 1.80 3.40 4.60 7.00 solder lands 7.80 10.20 solder resist 0.075 clearance

TK112xxCM

Abstract: TK112XXCU TK113XXCM SOT23L-6 SOT23L
Contextual Info: Io=300mA bipolar LDO Regulator IC Io=300mA バイポーラ低飽和レギュレータIC TK112XXCM TK112XXCU TK113XXCM SOT23L-6 (SOT89-5) (SOT23L-6) DESCRIPTION The TK112XXCM type, the TK112XXCU type and the TK113XXCM type are bipolar LDO Regulator ICs. The

Contextual Info: HT75xx-2 100mA Low Power LDO Features • Low power consumption · High output current : 100mA · Low voltage drop · Output voltage accuracy: tolerance ±1% · Low temperature coefficient · TO92, SOT89 and SOT23-5 packages · High input voltage up to 24V

SOT886

Abstract: NXP 12NC ending 12NC NXP LABEL
Contextual Info: SOT886 Product orientation 12NC ending 115 and 132 Rev. 03 — 24 April 2009 Packing information 1. Packing method Fig. 1 Package version 12NC ending Reel dimensions d x w mm SPQ/PQ (pcs) Reels per box Outer box dimensions l x w x h (mm) SOT886 115 180 x 8

Contextual Info: Reflow soldering footprint Footprint information for reflow soldering of TSOP36 package SOT851-2 Hx Gx P2 Hy 0.125 D1 Gy By Ay C X D2 (4x) P1 solder paste deposit solder land plus solder paste occupied area detail X DIMENSIONS in mm P1 P2 Ay By C D1 D2 Gx

Marking BA SOT89

Abstract: BCX5616TA BCX56TA bcx56-16t bcx54ta
Contextual Info: BCX 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Features • • • • • • • • Mechanical Data • • Ic = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction

Contextual Info: 24 DH VQ FN SOT815-1 DHVQFN24; Reel pack; SMD, 13" Q1/T1 Standard product orientation Orderable part number ending ,118 or J Ordering code 12NC ending 118 Rev. 4 — 19 April 2013 Packing information 1. Packing method Printed plano box Barcode label Reel