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Infineon Technologies AG SPD02N80C3ATMA1 MOSFET N-CH 800V 2A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPD02N80C3ATMA1	Digi-Reel	4,578		1	1 $1.79 10 $1.14 100 $1.79 1000 $0.55505 10000 $0.55505	Buy Now
	SPD02N80C3ATMA1	Cut Tape	4,578		1	1 $1.79 10 $1.14 100 $1.79 1000 $0.55505 10000 $0.55505	Buy Now
	SPD02N80C3ATMA1	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.47025	Buy Now
Avnet Americas	SPD02N80C3ATMA1	Reel		15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.42659	Buy Now
Mouser Electronics	SPD02N80C3ATMA1		49,615			1 $1.08 10 $0.847 100 $0.659 1000 $0.479 10000 $0.47	Buy Now
Verical	SPD02N80C3ATMA1		17,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.7677	Buy Now
	SPD02N80C3ATMA1		2,500		38	1 - 10 - 100 $0.6538 1000 $0.63 10000 $0.6288	Buy Now
	SPD02N80C3ATMA1		1,410		14	1 - 10 - 100 $0.6542 1000 $0.4486 10000 $0.4486	Buy Now
Arrow Electronics	SPD02N80C3ATMA1		17,500	15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.4673	Buy Now
	SPD02N80C3ATMA1	Cut Strips	1,410	15 Weeks	1	1 $1.0606 10 $0.8304 100 $0.6542 1000 $0.4486 10000 $0.4486	Buy Now

Newark	SPD02N80C3ATMA1	Cut Tape			1	1 $0.853 10 $0.784 100 $0.676 1000 $0.518 10000 $0.518	Buy Now
Rochester Electronics	SPD02N80C3ATMA1		580		1	1 $0.5225 10 $0.5225 100 $0.4911 1000 $0.4441 10000 $0.4441	Buy Now
Chip1Stop	SPD02N80C3ATMA1	Cut Tape	2,500			1 - 10 $0.664 100 $0.523 1000 $0.498 10000 $0.497	Buy Now
EBV Elektronik	SPD02N80C3ATMA1			16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	SPD02N80C3ATMA1		5,011			1 - 10 - 100 $1.467 1000 $1.192 10000 $1.192	Buy Now
Vision Engineering Inc SPD026587 KFM LED ACCESSORY HANDLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPD026587	Ammo Pack			1	1 $50 10 $50 100 $50 1000 $50 10000 $50	Buy Now
Mouser Electronics	SPD026587					1 $50 10 $50 100 $50 1000 $50 10000 $50	Get Quote
Newark	SPD026587	Bulk	2		1	1 $9.36 10 $9.36 100 $9.36 1000 $9.36 10000 $9.36	Buy Now
Vision Engineering Inc SPD028227 AC/DC converter for LFM G2 LED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPD028227	Ammo Pack			1	1 $37 10 $37 100 $37 1000 $37 10000 $37	Buy Now
Vision Engineering Inc SPD026119 10-DIOPTER STAYS LENS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPD026119	Ammo Pack			1	1 $89 10 $89 100 $89 1000 $89 10000 $89	Buy Now
Newark	SPD026119	Bulk			1	1 $89 10 $89 100 $89 1000 $89 10000 $89	Buy Now
Belden Inc H4830SPD02 DOOR 48UX30W PERF SPLIT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	H4830SPD02	Bulk			1	1 $587.88 10 $587.88 100 $587.88 1000 $587.88 10000 $587.88	Buy Now
Mouser Electronics	H4830SPD02					1 $662.98 10 $614.31 100 $614.31 1000 $614.31 10000 $614.31	Get Quote

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SPD02 Datasheets (22)

Part	Manufacturer	Description	Datasheet Type	PDF
SPD025980	Luxo	Optical Inspection Equipment - Accessories - SP SUCTION LENS 4D	Original	PDF
SPD026586	Luxo	Optical Inspection Equipment - Accessories - HANDLE WHITE	Original	PDF
SPD026587	Luxo	Optical Inspection Equipment - Accessories - HANDLE LT GRAY	Original	PDF
SPD026588	Luxo	Optical Inspection Equipment - Accessories - HANDLE BLACK	Original	PDF
SPD02N50C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPD02N50C3BTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY	Original	PDF
SPD02N60	Siemens		Original	PDF
SPD02N60	Siemens	SIPMO Power Transistor	Original	PDF
SPD02N60	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SPD02N60C3	Infineon Technologies	CoolMOS Power MOSFET, 600V, DPAK, RDSon=3.00 ?, 1.8A	Original	PDF
SPD02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPD02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPD02N60C3BTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 1.8A DPAK	Original	PDF
SPD02N60S5	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; V_DS (max): 600.0 V; Package: DPAK (TO-252); R_DS(ON) @ T_J=25°C V_GS=10: 3,000.0 mOhm; I_D(max) @ T_C=25°C: 1.8 A; I_Dpuls (max): 3.2 A;	Original	PDF

SPD02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPD02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPD02N60S5	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SPD02N60S5BTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.8A TO-252	Original	PDF
SPD02N80C3	Infineon Technologies	for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...	Original	PDF
SPD02N80C3	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; V_DS (max): 800.0 V; Package: DPAK (TO-252); R_DS(ON) @ T_J=25°C V_GS=10: 2,700.0 mOhm; I_D(max) @ T_C=25°C: 2.0 A; I_Dpuls (max): 6.0 A;	Original	PDF

SPD02 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SP*02N60 Abstract: P-TO252 SPD02N60 SPU02N60 Text: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified	Original	PDF	SPD02N60 SPU02N60 P-TO252 P-TO251 Q67040-S4133 Q67040-S4127-A2 SP*02N60 P-TO252 SPD02N60 SPU02N60
02N60C3 Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6 Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
02N80C3 Abstract: JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPD02N80C3 PG-TO252-3 02N80C3 02N80C3 JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c
02N50C3 Abstract: 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490 Text: SPD02N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPD02N50C3 P-TO252-3-1 Q67040-S4570 02N50C3 02N50C3 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490
02N60S5 Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252 Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 Q67040-S4226 02N60S5 02N60S5 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252
Untitled Abstract: No abstract text available Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPD02N80C3 PG-TO252-3 02N80C3
SPD02N60S5 Abstract: 02N60S5 P-TO252 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252. P-TO251. Q67040-S4226 02N60S5 SPD02N60S5 02N60S5 P-TO252 SPU02N60S5
02N60S5 Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5 Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO251-3-1 Q67040-S4226 P-TO252 Q67040-S4213 02N60S5 02N60S5 SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 P-TO252 SPD02N60C3 SPU02N60C3
02N80C3 Abstract: No abstract text available Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPD02N80C3 PG-TO252-3 02N80C3 02N80C3
Untitled Abstract: No abstract text available Text: last update februari 28, 2011 DATASHEET SPD025SAsilUBS reference spd025sasilubsn.doc page 1/1 DIFFERENTIAL PRESSURE SENSOR WITH COMPENSATED ANALOGUE OUTPUT: SPD025SAsilUBS SPD025SAsilUBS This Smartec pressure sensor has an amplified analogue output. The sensor is compensated for	Original	PDF	SPD025SAsilUBS spd025sasilubsn SPD025SAsilUBS 025SA
DD35 Abstract: 02N60C3 Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 DD35
02N60 Abstract: SPD02N60S5 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPU02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5
02N60S5 Abstract: 02N60 SPD02N60S5 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 P-TO251-3-1 P-TO252 02N60S5 02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5

SPD02N80C3 Abstract: 02N80C3 Q67040-S4635 55-AK Text: SPD02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 2.7 Ω ID 2 A P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code	Original	PDF	SPD02N80C3 P-TO252-3-1 Q67040-S4635 02N80C3 SPD02N80C3 02N80C3 Q67040-S4635 55-AK
Untitled Abstract: No abstract text available Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5
02N60c3 Abstract: 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623 Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60c3 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623
02n60s5 Abstract: Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42 Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 02n60s5 Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42
02n60 Abstract: SPD02N60S5 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4226 Q67040-S4213 02n60 SPD02N60S5
02N60C3 Abstract: SPD02N60C3 Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3
02N60 Abstract: No abstract text available Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 02N60
02N6 Abstract: 02N60S5 SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Text: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
SP*02N60 Abstract: transistor smd hq Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252	OCR Scan	PDF	SPD02N60 SPU02N60 P-T0251 Q67040-S4133 Q67040-S4127-A2 P-T0252 135ical SP*02N60 transistor smd hq
Untitled Abstract: No abstract text available Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A	OCR Scan	PDF	SPD02N60 SPU02N60 VPT09050 P-T0252 Q67040-S4133 P-T0251 Q67040-S4127-A2

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SPD02 Search Results

SPD02 Price and Stock

Infineon Technologies AG SPD02N80C3ATMA1

Vision Engineering Inc SPD026587

Vision Engineering Inc SPD028227

Vision Engineering Inc SPD026119

Belden Inc H4830SPD02

SPD02 Datasheets (22)

SPD02 Datasheets Context Search

SP*02N60

02N60C3

02N80C3

02N50C3

02N60S5

Untitled

SPD02N60S5

02N60S5

02N60C3

02N80C3

Untitled

DD35

02N60

02N60S5

SPD02N80C3

Untitled

02N60c3

02n60s5

02n60

02N60C3

02N60

02N6

SP*02N60

Untitled