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Infineon Technologies AG SPU02N60C3BKMA1 MOSFET N-CH 650V 1.8A TO251-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPU02N60C3BKMA1	Tube			1,500	1 - 10 - 100 - 1000 - 10000 $0.55651	Buy Now
Newark	SPU02N60C3BKMA1	Bulk			1	1 $1.66 10 $1.49 100 $1.16 1000 $0.757 10000 $0.706	Buy Now
EBV Elektronik	SPU02N60C3BKMA1			40 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPU02N60S5BKMA1 MOSFET N-CH 600V 1.8A TO251-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPU02N60S5BKMA1	Tube			1,500	1 - 10 - 100 - 1000 - 10000 $0.47468	Buy Now
Verical	SPU02N60S5BKMA1		21,000		480	1 - 10 - 100 - 1000 $0.7073 10000 $0.7073	Buy Now
	SPU02N60S5BKMA1		4,370		480	1 - 10 - 100 - 1000 $0.7073 10000 $0.7073	Buy Now
	SPU02N60S5BKMA1		1,493		480	1 - 10 - 100 - 1000 $0.7073 10000 $0.7073	Buy Now
	SPU02N60S5BKMA1		1,117		480	1 - 10 - 100 - 1000 $0.7073 10000 $0.7073	Buy Now
Rochester Electronics	SPU02N60S5BKMA1		27,980		1	1 $0.6657 10 $0.6657 100 $0.6258 1000 $0.5658 10000 $0.5658	Buy Now
Rochester Electronics LLC SPU02N60S5BKMA1 POWER FIELD-EFFECT TRANSISTOR, 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPU02N60S5BKMA1	Bulk			434	1 - 10 - 100 - 1000 $0.69 10000 $0.69	Buy Now
Infineon Technologies AG SPU02N60C3XK Trans MOSFET N-CH 600V 1.8A 3-Pin(3+Tab) TO-251 - Rail/Tube (Alt: SPU02N60C3BKMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPU02N60C3XK	Tube			1,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPU02N60C3 POWER FIELD-EFFECT TRANSISTOR, 1.8A I(D), 600V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-251
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SPU02N60C3		479			1 $0.81 10 $0.81 100 $0.486 1000 $0.378 10000 $0.378	Buy Now
Chip 1 Exchange	SPU02N60C3		1,677			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SPU02N60 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
SPU02N60	Siemens	Sipmo Power Transistor	Original	PDF
SPU02N60	Siemens		Original	PDF
SPU02N60	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SPU02N60C3	Infineon Technologies	CoolMOS Power MOSFET, 600V, I-PAK, RDSon=3.00Ohm, 1.8A	Original	PDF
SPU02N60C3	Infineon Technologies	Cool MOS Power Amp., 650V 1.8A 25W, MOS-FET N-Channel enhanced	Original	PDF
SPU02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPU02N60C3BKMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 1.8A IPAK	Original	PDF
SPU02N60S5	Infineon Technologies	CoolMOS Power MOSFET, 600V, I-PAK, RDSon=3.00Ohm, 1.8A	Original	PDF
SPU02N60S5	Infineon Technologies	Cool Mos Power Transistor	Original	PDF
SPU02N60S5	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO251-3; V_DS (max): 600.0 V; Package: IPAK (TO-251); R_DS(ON) @ T_J=25°C V_GS=10: 3,000.0 mOhm; I_D(max) @ T_C=25°C: 1.8 A; I_Dpuls (max): 3.2 A;	Original	PDF
SPU02N60S5	Infineon Technologies	Cool MOS Power Amp., 600V 1.8A 25W, MOS-FET N-Channel enhanced	Original	PDF
SPU02N60S5	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SPU02N60S5BKMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.8A TO-251	Original	PDF
SPU02N60S5XK	Infineon Technologies	SPU02N60 - 600V COOLMOS N-CHANNE	Original	PDF

SPU02N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SP*02N60 Abstract: P-TO252 SPD02N60 SPU02N60 Text: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified	Original	PDF	SPD02N60 SPU02N60 P-TO252 P-TO251 Q67040-S4133 Q67040-S4127-A2 SP*02N60 P-TO252 SPD02N60 SPU02N60
02N60C3 Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6 Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
02N60S5 Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252 Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 Q67040-S4226 02N60S5 02N60S5 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252
SPD02N60S5 Abstract: 02N60S5 P-TO252 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252. P-TO251. Q67040-S4226 02N60S5 SPD02N60S5 02N60S5 P-TO252 SPU02N60S5
02N60S5 Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5 Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO251-3-1 Q67040-S4226 P-TO252 Q67040-S4213 02N60S5 02N60S5 SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 P-TO252 SPD02N60C3 SPU02N60C3
DD35 Abstract: 02N60C3 Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 DD35
02N60 Abstract: SPD02N60S5 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPU02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5
02N60S5 Abstract: 02N60 SPD02N60S5 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 P-TO251-3-1 P-TO252 02N60S5 02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5
02N60S5 Abstract: smd 0306 package SPD02N60S5 SPU02N60S5 02N60 Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 PG-TO252. PG-TO251. SPD02N60S5 Q67040-S4226 Q67040-S4213 02N60S5 smd 0306 package 02N60
Untitled Abstract: No abstract text available Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5
02N60c3 Abstract: 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623 Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60c3 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623
02n60s5 Abstract: Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42 Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 02n60s5 Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42
02n60 Abstract: SPD02N60S5 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4226 Q67040-S4213 02n60 SPD02N60S5

02N60 Abstract: No abstract text available Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 02N60
02N6 Abstract: 02N60S5 SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Text: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 marking code V6 73 DIODE Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 P-TO252 SPD02N60C3 SPU02N60C3 marking code V6 73 DIODE
02N60S5 Abstract: 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Text: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPUx5N60S5/SPDx5N60S5 Q67040-S4226 02N60S5 02N60S5 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
02N6 Abstract: SPU02N60S5 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623 Text: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623
02n60s5 Abstract: Transistor 02N60S5 02N60 02n60s spd02n60s5 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 02n60s5 Transistor 02N60S5 02N60 02n60s spd02n60s5 SPU02N60S5
02N60C3 Abstract: 02n60 Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO251 • Periodic avalanche rated P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 02n60
SP*02N60 Abstract: transistor smd hq Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252	OCR Scan	PDF	SPD02N60 SPU02N60 P-T0251 Q67040-S4133 Q67040-S4127-A2 P-T0252 135ical SP*02N60 transistor smd hq
Untitled Abstract: No abstract text available Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A	OCR Scan	PDF	SPD02N60 SPU02N60 VPT09050 P-T0252 Q67040-S4133 P-T0251 Q67040-S4127-A2
02N60S5 Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5 Text: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	PDF	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-T0251 02N60S5 Q67040-S4226 P-T0252 02N60S5 SMD TRANSISTOR MARKING 02N SPD02N60S5

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SPU02N60 Price and Stock

Infineon Technologies AG SPU02N60C3BKMA1

Infineon Technologies AG SPU02N60S5BKMA1

Rochester Electronics LLC SPU02N60S5BKMA1

Infineon Technologies AG SPU02N60C3XK

Infineon Technologies AG SPU02N60C3

SPU02N60 Datasheets (14)

SPU02N60 Datasheets Context Search

SP*02N60

02N60C3

02N60S5

SPD02N60S5

02N60S5

02N60C3

DD35

02N60

02N60S5

02N60S5

Untitled

02N60c3

02n60s5

02n60

02N60

02N6

02N60C3

02N60S5

02N6

02n60s5

02N60C3

SP*02N60

Untitled

02N60S5