SR016 Search Results
SR016 Price and Stock
Essentra Components 13RSSR0165ROUND SPACER, .192 ID, .625 OD, |
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13RSSR0165 | Bulk | 28,884 | 1 |
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13RSSR0165 | Bulk | 4 Weeks | 500 |
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ROHM Semiconductor LTR18EZPFSR016RES 0.016 OHM 1% 1.5W 1206 WIDE |
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LTR18EZPFSR016 | Cut Tape | 14,715 | 1 |
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LTR18EZPFSR016 | 6,374 |
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LTR18EZPFSR016 | Cut Tape | 3,577 | 10 |
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LTR18EZPFSR016 | Cut Tape | 5,025 | 0 Weeks, 1 Days | 10 |
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ROHM Semiconductor LTR50UZPFSR016RES 0.016 OHM 1% 2W 2010 WIDE |
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LTR50UZPFSR016 | Cut Tape | 3,597 | 1 |
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LTR50UZPFSR016 | 9,906 |
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Essentra Components 13RSSR0166ROUND SPACER, .252 ID, .625 OD, |
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13RSSR0166 | Bulk | 1,607 | 1 |
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13RSSR0166 | Bulk | 4 Weeks | 500 |
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Essentra Components 13RSSR0164ROUND SPACER, .315 ID, .625 OD, |
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13RSSR0164 | Bulk | 1,000 | 1 |
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13RSSR0164 | Bulk | 4 Weeks | 500 |
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SR016 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SR010TR
Abstract: SR010 204D BCD8
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UL94V-0. SR008 SR010 SR016 SR008TR SR010TR SR016TR SR010TR SR010 204D BCD8 | |
DIODE marking CK 6CA
Abstract: DIODE marking 7BA SG 6CA 6ca DIODE code 20c 7ba Diode HP5 637 409 SG 5BA MARKING CO5 sg 7ba ai cm1 100 1e8
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M306H1SFP DIODE marking CK 6CA DIODE marking 7BA SG 6CA 6ca DIODE code 20c 7ba Diode HP5 637 409 SG 5BA MARKING CO5 sg 7ba ai cm1 100 1e8 | |
tcxo 13MHz
Abstract: SA7016 SA7016DH SR00602 TSSOP16
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SA7016 SA7016 tcxo 13MHz SA7016DH SR00602 TSSOP16 | |
SR01800
Abstract: SA7026 SA7026DH SR00602
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SA7026 SA7026 SR01800 SA7026DH SR00602 | |
Contextual Info: ISSI IS61LV3224 32K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 9, 10, 12, 15 ns • CMOS low power operation ❑ 594 mW max. operating @ 9 ns ❑ 36 mW (max.) CMOS standby • TTL compatible interface levels • Single 3.3V power supply |
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IS61LV3224 100-pin IS61LV3224 IS61LV3224-9TQ IS61LV3224-9TQI IS61LV3224-10TQ IS61LV3224-10TQI IS61LV3224-12TQ IS61LV3224-12TQI | |
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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Contextual Info: 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY advance ,NFo r m a t , o n J U L Y ,997 FEATURES DESCRIPTION • High-speed access time: 10, 12, 15 ns The IS S IIS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process |
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IIS61LV12824 SR016-0F | |
datesheet grade 8
Abstract: 10th datesheet automobile datesheet b.a datesheet ba 1st year datesheet M306H5FGFP MA 2nd year IT datesheet up board datesheet 12 272bi TRANSISTOR BJ 131-6
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REJ03B0095-0100Z M306H5MG-XXXFP/MC-XXXFP/FGFP M306H5 M306H3" datesheet grade 8 10th datesheet automobile datesheet b.a datesheet ba 1st year datesheet M306H5FGFP MA 2nd year IT datesheet up board datesheet 12 272bi TRANSISTOR BJ 131-6 | |
Contextual Info: SR01632 512K x 32 Low Power Static RAM 1.5V Core VDD Features • ■ ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read Cycle Times Typical ≤20ns Worst case ≤ 25ns Write Cycle Times Typical ≤ 9ns Worst case ≤ 12ns |
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HLXSR01632 1x10-12 5x10-12 150nm N40-1497-000-000 | |
SA8026
Abstract: SA8026DH SR00602
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SA8026 SA8026 SA8026DH SR00602 | |
REJ03B0152-0210
Abstract: 006F16 100P6S-A M306H7FGFP SMI-50 SR04F NXP P60 CRC43 Nippon capacitors
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ir remote control transmitter ABC T2
Abstract: SRF 7016 TRANSISTOR BJ 131-6 03F9 Nippon capacitors
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SA8026
Abstract: SA8026DH SR00602
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SA8026 SA8026 SA8026DH SR00602 | |
Contextual Info: SR01608 SR01608 2M x 8 STATIC RAM The monolithic, radiation hardened 16M bit Static proprietary design, layout and process hardening Random Access Memory SRAM in a 2M x 8 techniques. There is no internal EDAC implemented. configuration is a high performance 2,097,152 word x |
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HXSR01608 HXSR01608 150nm | |
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HLXSR01632Contextual Info: SR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low |
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HLXSR01632 32-bit 150nm ADS-14217 HLXSR01632 | |
nec p181
Abstract: SRF 7016 transistor f422 equivalent DVD read writer circuit diagram led clock circuit diagram Nippon capacitors
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M306H3MC-XXXFP/FCFP 16-BIT REJ03B0086-0100Z M306H3MC-XXXFP/FCFP M16C/60 116-pin nec p181 SRF 7016 transistor f422 equivalent DVD read writer circuit diagram led clock circuit diagram Nippon capacitors | |
tcxo philips
Abstract: philips pocket radio 19.44MHz TCXO philips tcxo SA8016 SA8016DH SA8016WC SR00602 TSSOP16
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SA8016 SA8016 tcxo philips philips pocket radio 19.44MHz TCXO philips tcxo SA8016DH SA8016WC SR00602 TSSOP16 | |
TSF-7070
Abstract: AWG MARKING CODE SOT23-5 EE19 type bobbin 29AWG circuit diagram of battery charger smps CTX22 EE19 cooper MUR160 SA58605 SA58605D
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SA58605 SA58605 TSF-7070 AWG MARKING CODE SOT23-5 EE19 type bobbin 29AWG circuit diagram of battery charger smps CTX22 EE19 cooper MUR160 SA58605D | |
M306H5MG-XXXFPContextual Info: M306H5MG-XXXFP/MC-XXXFP/FGFP SNGLE-CHIP 16-BIT CMOS MICROCOMPUTER with DATA ACQUISITION CONTROLLER REJ03B0095-0100Z Rev.1.00 Jan 19, 2005 1. DESCRIPTION The M306H5MG/MC-XXXFP and M306H5FGFP are single-chip microcomputers using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and is packaged in a 116-pin plastic |
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M306H5MG-XXXFP/MC-XXXFP/FGFP 16-BIT REJ03B0095-0100Z M306H5MG/MC-XXXFP M306H5FGFP M16C/60 116-pin Unit2607 M306H5MG-XXXFP | |
Contextual Info: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1998 Feb 08 Philips Semiconductors 1999 Mar 08 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N dual frequency |
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SA8026 SA8026 | |
5BW45
Abstract: SA1630 SA1530
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SA1630 SA1630 5BW45 SA1530 | |
Contextual Info: Philips Semiconductors Preliminary specification 2.5GHz low voltage fractional-N dual synthesizer FEATURES SA8026 The synthesizer operates at VCO input frequencies up to 2.5 GHz. The synthesizer has fully programmable main, auxiliary and reference dividers. All divider ratios are supplied via a 3-wire serial |
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SA8026 | |
116-Pin
Abstract: pal 005a DL000D mitsubishi split ac M306H2FCFP M306H2MC-XXXFP
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M306H2MC-XXXFP M306H2FCFP. M306H2FCFP 116-Pin pal 005a DL000D mitsubishi split ac M306H2FCFP M306H2MC-XXXFP | |
DL000D
Abstract: M306H2FCFP M306H2MC-XXXFP SR0040
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M306H2 M306H2FCFP M306H2MC-XXXFP DL000D SR0040 |