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    SR3 357 Search Results

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    SR3 357 Price and Stock

    Essentra Components SR-3570B

    Screws & Fasteners Snap Rivet,Black,.177 in-.217 in Hold
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SR-3570B 1,000
    • 1 $0.26
    • 10 $0.196
    • 100 $0.169
    • 1000 $0.152
    • 10000 $0.152
    		Buy Now

    ECS International Inc ECS-35-17-18-TR

    Crystals CRYSTAL 3.579545MHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ECS-35-17-18-TR 354
    • 1 $2.68
    • 10 $2.31
    • 100 $2
    • 1000 $1.62
    • 10000 $1.52
    		Buy Now

    Essentra Components SR-3570W

    Screws & Fasteners Snap Rivet,White,.177 in-.217 in Hold
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SR-3570W
    • 1 $0.27
    • 10 $0.207
    • 100 $0.179
    • 1000 $0.159
    • 10000 $0.149
    		Get Quote

    Intel Corporation CD8067303535700S R3GC

    Microprocessors - MPU 64BIT MPU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CD8067303535700S R3GC
    • 1 $2307.43
    • 10 $2307.43
    • 100 $2307.43
    • 1000 $2307.43
    • 10000 $2307.43
    		Get Quote

    New Energy LLC LSR3-12G03-5770-00

    LED Lighting Modules L2 Board, SST-20, Rectangular, 2x6, White, 5700K, 70 CRI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LSR3-12G03-5770-00
    • 1 -
    • 10 -
    • 100 -
    • 1000 $34.07
    • 10000 $34.07
    		Get Quote
    Find more SR3 357 price and stock on Findchips.com

    SR3 357 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SA97

    Abstract: AT49BV6416C AT49BV6416CT
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		64-megabit 3465C SA97 AT49BV6416C AT49BV6416CT PDF

    SA128

    Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original     		3608C SA128 PDF

    AT49BV640D

    Abstract: AT49BV640DT SA1117
    Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original     		PDF

    3608B

    Abstract: SA117
    Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original     		3608B SA117 PDF

    AT49BV640D

    Abstract: AT49BV6416C AT49BV6416CT
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		64-megabit 3465D AT49BV640D AT49BV6416C AT49BV6416CT PDF

    SA93

    Abstract: SA97 AT49BV6416C AT49BV6416CT
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		64-megabit 3465B SA93 SA97 AT49BV6416C AT49BV6416CT PDF

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original     		3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom PDF

    AT49BV6416

    Abstract: AT49BV6416C AT49BV6416CT
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


    Original     		64-megabit AT49BV6416 AT49BV6416C AT49BV6416CT PDF

    SA97

    Abstract: AT49BV640D AT49BV640DT SA1117
    Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original     		3608C SA97 AT49BV640D AT49BV640DT SA1117 PDF

    Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


    Original     		PDF

    Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


    Original     		3464C PDF

    AT49SN6416

    Abstract: AT49SN6416T SA21D 56c2 2F360
    Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


    Original     		3464B AT49SN6416 AT49SN6416T SA21D 56c2 2F360 PDF

    AT49SN6416

    Abstract: AT49SN6416T Hardlock drive CSA43
    Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


    Original     		3464C AT49SN6416 AT49SN6416T Hardlock drive CSA43 PDF

    Opt pam circuit

    Abstract: sr3 357
    Contextual Info: G E N E R A L D E SC R IP T IO N Hie MSM9810, to which up to 128 Mbits of ROM and/or EPROM storing voice data can directly be connected externally, is an IC that can playback 8 channels simultaneously. The device is straight 8-bit PCM playback, non-linear 8-bit PCM playback, 4-bit ADPCM


    OCR Scan     		MSM9810, MSM9810 --16dB Opt pam circuit sr3 357 PDF

    ad149

    Abstract: weitek 3164
    Contextual Info: 3164/3364 64-BIT FLOATING-POINT DATA PATH UNITS November 1989 1. Features 64-BIT FLOATING-POINT DATA PATH FULL FUNCTION 64-bit and 32-bit floating-point and 32-bit integer multiplier Divide and square root operations Single-cycle pipeline throughput for the following


    OCR Scan     		64-BIT 32-bit ad149 weitek 3164 PDF

    EQUIVALENT OF SR240

    Abstract: XL-8137 weitek Weitek 3364 weitek 3164 Weitek xl-8136 wtl3364 CXNL 0x78F y2274
    Contextual Info: tilEIT EK CORP Tbb3ö2b O O O lS lö 11E D □ 3164/3364 64-BIT FLOATING-POINT DATA PATH UNITS T - W - H - o S November 1989 1. Features 64-BIT FLO A T IN G -PO IN T D A T A PA T H F U L L FU N C T IO N 64-bit and 32-bit floating-point and 32-bit integer multiplier


    OCR Scan     		64-BIT 32-bit EQUIVALENT OF SR240 XL-8137 weitek Weitek 3364 weitek 3164 Weitek xl-8136 wtl3364 CXNL 0x78F y2274 PDF

    FY452

    Abstract: MT28C6428P18 MT28C6428P20
    Contextual Info: 4 MEG x 16 ASYNCHRONOUS/PAGE FLASH 512K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C6428P20 MT28C6428P18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 67-Ball FBGA Top View • Flexible dual-bank architecture


    Original     		MT28C6428P20 MT28C6428P18 67-Ball 32K-word 512K-words MT28C6428P20 FY452 MT28C6428P18 PDF

    67-ball

    Abstract: NanoAmp Solutions
    Contextual Info: NanoAmp Solutions, Inc. N08C1618E6A 44MEG ASYNCHRONOUS/PAGE FLASH 1982 Zankerx Road, Jose, CA 95112 MEG x16 16San ASYNCHRONOUS/PAGE FLASH N08C1620E6A ph: 408-573-8878, FAX: 408-573-8877 52K x 16 SRAM COMBO MEMORY 512K x 16 SRAM COMBO MEMORY Advance Information


    Original     		N08C1618E6A 1982MEGx N08C1620E6A 512Kx 64x08 4Mbx16) 512Kbx16) 67-Ball 64-bit N08C16xxE6A NanoAmp Solutions PDF

    67-ball

    Abstract: 16mb HIGH-SPEED ASYNCHRONOUS SRAM FY452 micron sram MT28C6428P18FM-85 BET MT28C6428P18 MT28C6428P20
    Contextual Info: ADVANCE‡ 4 MEG x 16 ASYNCHRONOUS/PAGE FLASH 512K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C6428P20 MT28C6428P18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 67-Ball FBGA Top View • Flexible dual-bank architecture


    Original     		MT28C6428P20 MT28C6428P18 67-Ball 32K-word MT28C6428P20 16mb HIGH-SPEED ASYNCHRONOUS SRAM FY452 micron sram MT28C6428P18FM-85 BET MT28C6428P18 PDF

    FY452

    Abstract: MT28C6428P18 MT28C6428P20
    Contextual Info: ADVANCE‡ 4 MEG x 16 ASYNCHRONOUS/PAGE FLASH 512K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C6428P20 MT28C6428P18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 67-Ball FBGA Top View • Flexible dual-bank architecture


    Original     		MT28C6428P20 MT28C6428P18 67-Ball 32K-word MT28C6428P20 FY452 MT28C6428P18 PDF

    FW912

    Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture


    Original     		MT28F642D18 MT28F642D20 FW912 PDF

    fw912

    Abstract: fw911 FX912 FY912 FY-912 FX911
    Contextual Info: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture


    Original     		MT28F642D18 MT28F642D20 80blocks fw912 fw911 FX912 FY912 FY-912 FX911 PDF

    fw912

    Abstract: MT28F642D18 MT28F642D20 fw911 FY912 fw905
    Contextual Info: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture


    Original     		MT28F642D18 MT28F642D20 59-Ball MT28F642D18 MT28F642D20 fw912 fw911 FY912 fw905 PDF

    fw912

    Abstract: MT28F642D18 MT28F642D20
    Contextual Info: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture


    Original     		MT28F642D18 MT28F642D20 59-Ball MT28F642D18 MT28F642D20 fw912 PDF