SRAM 34 PIN Search Results

Contextual Info: MICRON TECHNOLOGY INC SSE ]> b i l l 5 4 e! 0 0 0 3 3 0 0 |v iia = O N 16K SRAM 34Ö MT5C6404 X 4 SRAM 16K X 4 SRAM • High speed: 8’, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option

Contextual Info: H i g h Pe rf o rm a n c e A S7C4096 A S7 C 34 096 512Kx8 CMOS SRAM A 5 1 2 K x 8 CMOS SRAM Preliminary information Features Easy memory expansion with CE, OE inputs TTL-compatible, three-state I/O 36-pin JEDEC standard package - 400 mil SOJ Center power and ground pins for low noise

vqc 10 d

Abstract: 34-PIN DS1330 DS1330BL DS1330YL
Contextual Info: DS1330YL/BL DALLAS SEMICONDUCTOR DS1330YL/BL 256K Nonvolatile SRAM with Battery Monitor NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1330Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention 34 33 32

Contextual Info: DSPG7000-34 Linear ICs Compander Circuit statusû Nom. Supp V Minimum Operating Temp (øC) Maximum Operating Temp (øC) Package StyleQCC-J Mounting StyleS Pinout Equivalence CodeN/A # PinsN/A Ckt. (Pinout) Number Description64k SRAM; use with DSPG7000-25;31 and DSPG7002-11

Contextual Info: DS1350YLPM/ABLPM PRODUCT PREVIEW DS1350YLPM/ABLPM 4096K Nonvolatile SRAM with Power Monitors DALLAS SEMICONDUCTOR FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc 34 33 32 31 30 29 28 27 26 25 24 23 • Data is automatically protected during power loss

Contextual Info: DS1330W PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1330W 3.3V 256K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23 • Data is automatically protected during power loss

Contextual Info: DS1350YLPM/ABLPM PRODUCT PREVIEW DS1350YLPM/ABLPM 4096K Nonvolatile SRAM with Power Monitors DALLAS SEMICONDUCTOR FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc 34 33 32 31 30 29 28 27 26 25 24 23 22 21 • Data is automatically protected during power loss

DS1270

Abstract: DS1270AB DS1270Y
Contextual Info: DS1270Y/AB DS1270Y/AB 16M Nonvolatile SRAM FEATURES PIN ASSIGNMENT •5 years minimum data retention in the absence of external power NC 1 36 VCC • Data is automatically protected during power loss A20 2 35 A19 • Unlimited write cycles A18 3 34 NC A16

Contextual Info: DS1350W PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1350W 3.3V 4096K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23 22 • Data is automatically protected during power loss

Contextual Info: DS1350W PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1350W 3.3V 4096K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23 22 • Data is automatically protected during power loss

Contextual Info: DS1330Y/AB DS1330Y/AB DALLAS SEMICONDUCTOR FEATURES 256K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23 22 • Data is autom atically protected during power loss

Contextual Info: DS1350Y/AB DS1350Y/AB DALLAS SEMICONDUCTOR 4096K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23 22 • Data is autom atically protected during power loss

Contextual Info: DS 1230YL/BL DALLAS SEMICONDUCTOR DS1230YL/BL 256K Nonvolatile SRAM NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1230Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years m inimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23

Contextual Info: DS1330W PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1330W 3.3V 256K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23 22 • Data is automatically protected during power loss

Contextual Info: DS1330Y/AB P R E L IM IN A R Y DS1330Y/AB DALLAS SEMICONDUCTOR 256K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power 34 I 33 I 32 I • Data is automatically protected during power loss

es 3880 fm

Abstract: BBS 8500 manufacturer code rohm AS7C34096 AS7C4096 t9140
Contextual Info: H ig h P e rf o rm a n ce AS7C 4096 A S7 C 34 09 6 5 1 2Kx8 CMOS SRAM A 5 l 2 K x 8 CMOS SRAM Preliminary information Features • Organization: 524,288 w ords x 8 bits • High speed - 1 2 /1 5 /2 0 /2 5 ns address access time - 6 / 7 / 8 / 9 ns output enable access time

RCM2100

Abstract: RCM2110 RCM2120 RCM2130 RabbitCore Rabbit 2000 Rabbit 2000 100 pin
Contextual Info: RCM2100 RabbitCore Microprocessor Core Module MODELS | RCM2100 | RCM2110 | RCM2120 | RCM2130 | Key Features • Ethernet and non-Ethernet models • Rabbit® 2000 @ 22.1 MHz • Up to 512K SRAM • Up to 512K Flash • 34 or 40 general-purpose I/O Design Advantages:

Contextual Info: SDRAM AS4SD16M16 DOCUMENT TITLE 36Mb Pipelined Sync SRAM Rev # 1.7 1.8 1.9 AS4SD16M16 Rev. 1.7 3/2/09 History Text update on pg 8 &34, AC Spec update Removed “Consult Factory” pg 1 Update Micross Information Release Date March 2009 Status Release March 2009

PCI32

Abstract: PQ208 PT280 QL5632 ql-64
Contextual Info: QL5632 Enhanced QuickPCI Device Data Sheet •••••• 33 MHz/32-bit PCI Master/Target with Embedded Programmable Logic and Dual Port SRAM • Reference design with driver code Win 34 PCI Bus 33 MHz/32 bits (data and address Master Controller High

PLCC-34

Contextual Info: DS1350Y/AB P R E L IM IN A R Y DALLAS SEMICONDUCTOR FEATURES DS1350Y/AB 4096K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention 34 33 32 31 30 29 28 27 26 25 24 23 22 • Data is automatically protected during Vc c power

DS1265

Abstract: DS1265AB DS1265Y
Contextual Info: DS1265Y/AB PRELIMINARY DS1265Y/AB 8M Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 36 VCC NC 2 35 A19 A18 3 34 NC A16 4 33 A15 • Low–power CMOS operation A14 5 32 A17 • Read and write access times as fast as 70 ns

Contextual Info: TT WPS512K8-XRJX M/HITE /M ICRO ELECTRONICS 512Kx8 SRAM PRELIMINARY * PLASTIC PLUS FEATURES • Access Tim es of 15. 20, 25ns PIN CONFIGURATION TOP VIEW AO [ I 1 ^ 35 □ A18 A2T 3 34 □ A17 A3 [Z 4 33 □ A16 A4 □ 5 32 □ A15 CSE 6 7 30 □ 1/01 c

Contextual Info: DS1345Y/AB P R E L IM IN A R Y DALLAS SEMICONDUCTOR FEATURES DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention 34 33 32 31 30 29 28 27 26 25 24 23 • Data is automatically protected during V cc power

DS1265

Abstract: DS1265AB DS1265Y
Contextual Info: DS1265Y/AB DS1265Y/AB 8M Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 36 VCC NC 2 35 A19 A18 3 34 NC A16 4 33 A15 • Low–power CMOS operation A14 5 32 A17 • Read and write access times as fast as 70 ns