SSM3J15F Search Results

SSM3J15FU

Contextual Info: SSM3J15FU 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J15FU ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 2.1±0.1 • 小型パッケージで高密度実装に最適 号 ド レ イ ン ・ ソ ー ス 間 電 圧

SSM3J15F

Contextual Info: SSM3J15F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15F High Speed Switching Applications Analog Switch Applications Unit: mm +0.5 2.5-0.3 : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) Rating Unit Drain-Source voltage

SSM3J15FV

Contextual Info: SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High Speed Switching Applications Analog Switch Applications Low on-resistance Unit: mm Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V DC ID −100 Pulse

Contextual Info: SSM3J15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

Contextual Info: SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High Speed Switching Applications Analog Switch Applications Unit: mm Low on-resistance Rating Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V DC ID −100

SSM3J15FV

Contextual Info: SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High-Speed Switching Applications Analog Switch Applications • Optimum for high-density mounting in small packages • Low on-resistance Unit: mm : RDS ON = 12 Ω (max) (@VGS = −4 V)

SSM3J15FV

Contextual Info: SSM3J15FV 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J15FV ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 0.22±0.05 • 小型パッケージで高密度実装に最適 号 定 格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧

SSM3J15FS

Contextual Info: SSM3J15FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FS High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

SSM3J15FS

Contextual Info: SSM3J15FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FS High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

Contextual Info: SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High-Speed Switching Applications Analog Switch Applications • Optimum for high-density mounting in small packages • Low on-resistance Unit: mm : RDS ON = 12 Ω (max) (@VGS = −4 V)

Contextual Info: SSM3J15FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FS High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

Contextual Info: SSM3J15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

Contextual Info: SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High Speed Switching Applications Analog Switch Applications Low on-resistance Unit: mm Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V DC ID −100 Pulse

SSM3J15FV

Contextual Info: SSM3J15FV 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J15FV ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 0.22±0.05 • 小型パッケージで高密度実装に最適 号 定 格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧

SSM3J15FS

Contextual Info: SSM3J15FS 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J15FS ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 1.6±0.2 • 小型パッケージで高密度実装に最適 号 定 格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧

SSM3J15FU

Contextual Info: SSM3J15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

Contextual Info: SSM3J15F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15F High Speed Switching Applications Analog Switch Applications Unit: mm +0.5 2.5-0.3 : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) Rating Unit Drain-Source voltage

SSM3J15FU

Contextual Info: SSM3J15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

Contextual Info: SSM3J15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

fet to92

Abstract: Pch MOS FET SSM3J13T SSM3J16FU ssm3k14t transistor ESM 2SK1830 2SK2035 2SK2825 SSM3J15TE
Contextual Info: Part Number SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 Nch 2SK2825 Nch 2SK2035 Nch SSM3K04FS SSM3K16FS SSM3K15FS 2SJ347 Pch SSM3J16FS SSM3J15FS 2SK1829 Nch 2SK2824 Nch 2SK2034 Nch 2SK2037 Nch SSM3K04FU SSM3K16FU SSM3K05FU

SSM3J15F

Abstract: TO-236Mod ssm3j15
Contextual Info: SSM3J15F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15F High Speed Switching Applications Analog Switch Applications Unit: mm +0.5 2.5-0.3 : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) Rating Unit Drain-Source voltage

SSM3J15FS

Contextual Info: SSM3J15FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FS High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

SSM3J15F

Contextual Info: SSM3J15F 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J15F ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm +0.5 2.5-0.3 • 小型パッケージで高密度実装に最適 定 格 VDS −30 V ゲ ー ト ・ ソ ー ス 間 電 圧

Contextual Info: SSM3J15F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15F High Speed Switching Applications Analog Switch Applications Unit: mm +0.5 2.5-0.3 : Ron = 12 Ω max (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) Rating Unit Drain-Source voltage