SSMINI 5 Search Results

Contextual Info: Composite Transistors UP04212 Silicon NPN epitaxial planar type For digital circuits 5 4 1.20±0.05  Two elements incorporated into one package Transistors with built-in resistor  SSMini type package, reduction of the mounting area and assembly cost

Contextual Info: Composite Transistors UP0187BG Silicon N-channel MOSFET For switching circuits • Package  High-speed switching  Incorporating a built-in gate protection-diode  Two elements incorporated into one package  SSMini type package, reduction of the mounting area and assembly cost

UP0187BG

Abstract: 2SK3938 UP0187B
Contextual Info: Composite Transistors UP0187BG Silicon N-channel MOSFET For switching circuits • Package  High-speed switching  Incorporating a built-in gate protection-diode  Two elements incorporated into one package  SSMini type package, reduction of the mounting area and assembly cost

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04112G Silicon PNP epitaxial planar type For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)  SSMini type package, reduction of the mounting area and assembly cost

UP04212

Abstract: UNR2212 UP04212G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04212G Silicon NPN epitaxial planar type For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)  SSMini type package, reduction of the mounting area and assembly cost

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04112 Silicon PNP epitaxial planar type For digital circuits 5 4 1.20±0.05  Two elements incorporated into one package (Transistors with built-in resistor)  SSMini type package, reduction of the mounting area and assembly cost

Contextual Info: DATA SHEET Part No. AN34070A Package Code No. SSMINI-5DA Publication date: June 2008 SDB00163AEB 1 AN34070A Contents „ Overview ………………………………………………….…………………………………………………………. 3

AN26072A

Abstract: S22LA S11l connection diagram of lg 17 pin diagram
Contextual Info: DATA SHEET Part No. AN26072A Package Code No. SSMINI-5DC Publication date: October 2011 Ver. AEB 1 AN26072A Contents „ Overview ………………………………………………….…………………………………………………………. 3

up04212

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04212G Silicon NPN epitaxial planar type For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)  SSMini type package, reduction of the mounting area and assembly cost

UNR2112

Abstract: UP04112 UP04112G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04112G Silicon PNP epitaxial planar type For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)  SSMini type package, reduction of the mounting area and assembly cost

UNR2212

Abstract: UP04212 UP04212G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04212G Silicon NPN epitaxial planar type For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)  SSMini type package, reduction of the mounting area and assembly cost

AN34070A

Abstract: AN3407
Contextual Info: DATA SHEET Part No. AN34070A Package Code No. SSMINI-5DA Publication date: October 2008 SDB00163BEB 1 AN34070A Contents „ Overview ………………………………………………….…………………………………………………………. 3

GRM033B11C102KD01

Abstract: AN26014A Panasonic PGS Thermal LQP03T3N0B04 Symbol of SS-Mini/S-Mini/Mini/Mini
Contextual Info: DATA SHEET Part No. AN26014A Package Code No. SSMINI-5DB Publication date: July 2009 SDE00033AEB 1 AN26014A Contents „ Overview ………………………………………………….…………………………………………………………. 3

Contextual Info: DATA SHEET Part No. AN26018A Package Code No. SSMINI-5DC Publication date: July 2010 Ver. AEB 1 AN26018A Contents „ Overview ………………………………………………….…………………………………………………………. 3 „ Features ………………………………………………….…………………………………………………………. 3

SC81

Abstract: 2SD2620J SC-81 VEBO-15V SS-Mini
Contextual Info: Transistors 2SD2620J Silicon NPN epitaxial planer type For low-frequency amplification 1.60+0.05 –0.03 1.00±0.05 • Features 0.12+0.03 –0.01 5° Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage

equivalent 2sc5295

Abstract: 2SC5295 SC-75
Contextual Info: Transistors 2SC5295 Silicon NPN epitaxial planer type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 1° 3 5° Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2

Contextual Info: New Achieving lower electrical power for smaller mobile phones 200mA Class Low VF Schottky barrier diode MA2SD31 „ Overview Unit: mm 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.60±0.05 1.20+0.05 –0.03 0.01±0.01 5˚ 0.60 (0.60) 0.80±0.05

2SD2620J

Abstract: VEBO-15V
Contextual Info: Transistors 2SD2620J Silicon NPN epitaxial planer type For low-frequency amplification 1.60+0.05 –0.03 1.00±0.05 • Features 0.12+0.03 –0.01 5° Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage

MA2SV07

Abstract: Silicon epitaxial planar type SS-Mini 3 SSMini
Contextual Info: Variable Capacitance Diodes MA2SV07 Silicon epitaxial planar type Unit : mm For VCO 0.15 min. + 0.05 0.27 − 0.02 0.15 min. Symbol + 0.05 + 0.05 0.13 − 0.02 1.7 ± 0.1 Rating Unit Reverse voltage DC VR 6 V Junction temperature Tj 150 °C Storage temperature

SSMIni

Abstract: MA2S367 SS-Mini
Contextual Info: Variable Capacitance Diodes MA2S367 Silicon epitaxial planar type Unit : mm For AFC of UHF and VHF electronic tuner 0.15 min. + 0.05 0.27 − 0.02 0.15 min. + 0.05 0.27 − 0.02 • Large capacitance ratio • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and

MAZ802400LCT-ND

Abstract: MAZ30560MLCT-ND MAZ80510MLTR MAZ82000MLTR MAZ80430MLCT MAZ302400LCT-ND MAZ30620MLCT maz30620ml MAZ31800MLTR MAZS3300MLTR
Contextual Info: Zener Diodes Min. Zener Voltage VZ Nom. Max. IZ mA RZ (max.) (Ohms) Digi-Key Part No. Silicon Planar Type 1 Digi-Key Part No. Tape & Reel Size Pricing .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21 .21

SSMini

Contextual Info: Panasonic S w itc h in g Diodes MA137 Silicon epitaxial planer type Unit : mm For high-speed switching circuits 0.80 0 .8 0 ± 0.05 I Features Small SS-Mini type package with two incorporated elements, en­ abling high-density mounting Series connection in package

MA2S376

Contextual Info: Variable Capacitance Diodes MA2S376 Silicon epitaxial planar type Unit : mm For VCO of a UHF radio 0.15 min. + 0.05 • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package

Contextual Info: MA111 Variable Capacitance Diodes MA2S304 Silicon epitaxial planer type Unit : mm For VCO 0.15 min. 0.15 min. +0.05 Small series resistance rD ● SS-Mini package, enabling down-sizing of the equipment and auto- +0.05 ● 0.27–0.02 Good linearity and large capacity ratio of VR – C D