SSP3 Search Results

SSP3N90

Abstract: tf25c MOSFET 900V 3A
Contextual Info: N-CHANNEL POWER MOSFETS SSP3N90 FEATURES • • • • • • • Lower R d s io n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

SSP3N80

Abstract: CM 502 SSP3N70 MOSFET 30A 700V
Contextual Info: N-CHANNEL POWER MOSFETS SSP3N80/70 FEATURES TO-220 • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: Industrial sensor cable PTFE cable sheath HT-SSP3-10/S2430 • ■ ■ Ready-made and overmoulded connection cable Protection class IP65 For use in high-temperature applications ■ Other cable lengths available ■ PTFE cable Wiring diagram Type code Ident no.

d0215

Contextual Info: SSP3N90A Advanced Power MOSFET B V q ss - 900 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 t-iA Max. @ VDS= 900V ^DS(on) = 6 .2 Q.

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 001733^ T3T «SIIGK N-CHANNEL POW ER M O SFETS SSP3N70 SSH3N70 FEATURES • • • • • • • Low er Ros ON Im proved in d u c tive ru g g ed n es s F ast sw itch in g tim e s R u g g ed p o lys ilico n g a te ce ll s tru c tu re

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 M8 x 1 / Ø 8mm Round connector Plug M8 x 1 SSP3-2/S90

Contextual Info: SSP3N90A FEATURES Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 900 V ^ D S o n = 6 . 2 Q. o II ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V

Contextual Info: SSP3N80A FEATURES - 800 V ^DS on = 4.8 Q. • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 800V B Low Rds(0n) ■ 3.800 £1 (Typ.) CO Avalanche Rugged Technology

Contextual Info: Connection cable male M8 x 1, high-temperature proof HT-SSP3-5/S2430 • ■ ■ Ready-made and overmoulded connection cable Protection class IP65 For use in high-temperature applications ■ Other cable lengths available ■ PTFE cable Wiring diagram Type code

Contextual Info: SAM S UN G E L E C T R O N I C S INC b4E D • ? tlb4142 O D I E S E 3bS ■ SMGK N-CHANNEL LOGIC LEVEL MOSFET SSP3055L FEATURES • • • • • • • • Lower RDS on Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure

Contextual Info: SSP3N90A A d van ced Power MOSFET FEATURES B V qss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 900V

Contextual Info: SSP3005 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current30 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage5.0 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800 V(FM) Max.(V) Forward Voltage600m @I(FM) (A) (Test Condition)30

48a slide

Abstract: Series 48A
Contextual Info: Series 48A: Slide Switches Series 48A Slide Switches FEATURES • Save Space and Weight • SPDT and DPDT Circuitry • Choice of Actuations and Terminations Models in inches and millimeters SPDT TRAVEL .085 (2.16) SWITCH POSITION MODEL NO. SSP1 SSP2 SSP3

SSP3N80A

Contextual Info: SSP3N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 4.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 800V

ssp35

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 M8 x 1 / Ø 8mm Round connector Plug M8 x 1 SSP3-5/S90

Contextual Info: SSP3N80A A d v a n c e d Power MOSFET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower-Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 800V

DIODE AA 119

Abstract: SSP3N90A
Contextual Info: Advanced SSP3N90A P o w e r MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = 3 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

Contextual Info: Industrial sensor cable PTFE cable sheath HT-SSP3-2/S2430 • ■ ■ Ready-made and overmoulded connection cable Protection class IP65 For use in high-temperature applications ■ Other cable lengths available ■ PTFE cable Wiring diagram Type code Ident no.

SSP310

Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 M8 x 1 / Ø 8mm Round connector Plug M8 x 1 SSP3-10/S90

vo8 diode

Abstract: MOSFET 800V 3A
Contextual Info: SSP3N80A Advanced Power MOSFET FEATURES Avatanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA Max. @ Low Rds(on) ' 3.800 Q (Typ.) 800 V RdS(oo) =

SSP3N90A

Contextual Info: SSP3N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 6.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 900V

Schottky Rectifiers

Contextual Info: fit» 8 3 6 8 6 0 2 S OL I T R O N D E V I C E S DE I a 3 b A b 0 a 0 0 0 5 3 ^ 7 □ | ~ INC 86D Solitron 02397 D 7~~ 0 7 “ SCHOTTKY RECTIFIERS SSP3020 SSP3030 SSP3040 D E V I C E S , INC. POWER SCHOTTKY RECTIFIERS 30 A M PER ES FEATURES HIGH EFFICIEN C Y

RE48A

Abstract: s4 48a Slide Switches SSP3 grayhill 40STD
Contextual Info: Series 48A: Slide Switches SERIES 48A Slide Switches FEATURES • Save Space and Weight • SPDT and DPDT Circuitry • Choice of Actuators and Terminations MODELS In inches and millimeters SPDT Model No. Switching Position SSP1 ON NONE ON SSP2 ON NONE (ON)

identification trace code texas

Contextual Info: SN54ACT8997, SN74ACT8997 SCAN-PATH LINKERS WITH 4-BIT IDENTIFICATION BUSES SCAN-CONTROLLED IEEE STD 1149.1 JTAG TAP CONCATENATORS SCAS157D – APRIL 1990 – REVISED DECEMBER 1996 D D D D D D D D D Members of the Texas Instruments SCOPE  Family of Testability Products