LB4142 Search Results

Contextual Info: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^4 1 4 5 KM536512W/WG 0 D1 5 2 1 5 54T ■ SMGK DRAM MODULES 512KX36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM536512W-6 60ns 15ns 110ns KMM536512W-7 70ns 20ns

lf7a

Contextual Info: SSP7N60A Advanced Power MOSFET FEATURES BVdss - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 mA (Max.) @ V DS = 600V

equivalent ka431lz

Abstract: 431 regulator
Contextual Info: KA431 Industrial ELECTRONICS P R O G R A M M A BLE SHUNT R EG ULATO R TO-92 The KA431/A are three-terminal adjustable regulator series with a guaranteed thermal stability over applicable temperature ranges. The output voltage may be set to any value between V REF approximately 2.5

60-158

Contextual Info: CS-500300 ELECTRONICS POWOF G b A S FET S am su n g M icro w ave S em ico n d u cto r A pril 1996 800-1000 MHz Prelim inary Description The CS-500300 is a 10.8 mm n-channel M ESFET with 1 nm gate length that is processed with Samsung Microwave’s power optimized P20 process. Ti/Pt/Au

Contextual Info: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GEN ER AL DESC RIPTIO N FEATURES The Samsung KMM466F10 2 4AT-L is a 1M bit x 64 Dynamic RAM high density memory module. The

KM48C512DJ

Abstract: G0353
Contextual Info: K M 4 8 C 5 12 D J CMOS DRAM 512K x 8 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM718B90 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On- Chip Address and Control Registers. • Single 5V±5% Power Supply.

Contextual Info: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

KM29V32000TS

Contextual Info: KM29V32000TS ELECTRONICS Fl as h 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

9914E

Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E D | 00G7äfc.a T . s> KS82C50A 1 | - 7 5 - 3 7 '0 5 CMOS ASYNCHRONOUS COMMUNICATION ELEMENT ACE Preliminary FEATURES/BENEFITS DESCRIPTION Single Chip UAR17BRG DC to 10MHz Operation, (DC to 625K Baud) Crystal or External Clock Input

RB414

Abstract: B4145 KM44V4004BK
Contextual Info: KM44V4004BK CMOS DRAM ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

ttl 74112

Abstract: KMM594000 KMM594000-10 KMM594000-8 KM41C4000J 74112
Contextual Info: SAMSUNG ELECTRONICS INC 4 2E » 7^4142 KM M594000 001D4Û2 b • DRAM MODULES 4 M x 9 CMOS DRAM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: T h e S am su ng K M M 59 4 0 00 is a 4 M b l t x 9 D yn am ic R A M high de n s ity m em ory m odu le. T h e S a m s u n g

C1204B

Abstract: t2g memory
Contextual Info: KM416C1204BJ CMOS DRAM 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

km29n16000at

Abstract: c60h - dc
Contextual Info: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

Contextual Info: KM44C4003A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC 13ns 90ns K M 44C 4003A /A L/A LL/A S L-5 50ns K M 44C 4003A /A L7A LL/A SL-6 60ns 15ns 110ns K M 44C 4003A /A L/A LL/A S L-7

Contextual Info: KMM374F1680AK KMM374F1600AK DRAM MODULE KMM374F1680AK & KMM374F1600AK EDO Mode without buffer 16Mx72 DRAM DIMM with ECC based on 16Mx4, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F168 0 0AK is a 16M bit x 72 Dynamic RAM high density memory module. The

Contextual Info: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B

Contextual Info: KMM37 2 V 4 0 0 B K D R A M Mo d u l e ELECTRO NICS KMM372V400BK/BS / KMM372V41OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The

f0035

Abstract: SMP-22203 017t
Contextual Info: SMP-22203 ELECTRONICS D lO l B Ï 3 S Lo w N o is e A m p life r S a m s u n g M ic ro w a v e S e m ic o n d u c to r 1.8 - 3 .0 G H z Description Features The SMP-22203 is a high performance Gallium Arsenide GaAs Monolithic Microwave Integrated Circuit (MMIC)

511ML

Abstract: 243L3 tsop 338 IR
Contextual Info: FLASH M EM ORY KM 29V32000TS/RS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4 M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 1S)Byte

Contextual Info: SAMSUNG ELECTRONICS INC MC4558C 42E D • 7^ b M m 2 DOD^mi D mSMGK LINEAR INTEGRATED CIRCUIT a sop DUAL OPERATION AMPLIFIER The MC4558 is a monolithic integrated circuit designed for dual operational amplifier. FEATURES • • • • « D IP No frequency compensation

Contextual Info: CMOS VIDEO RAM KM4216C/V256 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. FEATURES It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

Contextual Info: KM29V16000AR Flash ELECTRONICS 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES •Single 3.3-volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: KM44C4003BK CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time