SSR -25 DD Search Results

Grayhill 70s2-04-c-03-v

Abstract: 70S2-03-C-25-S SSRT240D10 70s2-04-c-03-v pla relay 5 pin iso mini relay with 12 volts CRYDOM d2440 70S2-04-B-03-V Grayhill 70s2-04-b-12-s Grayhill 70S2
Contextual Info: Your Contact for Relays SOLID STATE RELAYS CLASS 70S2 MINIATURE SSR’s FORMERLY GRAYHILL 2.5 Amp to 25 Amp Outputs CLASS 6 SSR’s 2.5 Amp to 125 Amp Outputs ! W E . N SR’s S HILL T. Y A VOL GR 6 6 S6 S . A CL -N.O T S SP PUT T U LO DUA .O. N T DPS EAR

Contextual Info: SSR/U4N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 2.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V

SSR -100 DD

Abstract: 600V 2A MOSFET N-channel U2N60 B4112 0G40471
Contextual Info: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS - 6 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V

U1N60

Contextual Info: SSR/U1N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 12 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.9 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 25 µA (Max.) @ VDS = 600V

SSR -100 DD

Contextual Info: SSR/U1N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 12 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.9 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 25 µA (Max.) @ VDS = 600V

U2N60

Contextual Info: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 25 µA (Max.) @ VDS = 600V

SSR -100 DD

Abstract: MOSFET IRF VDs 600v SSR -25 DD POWER MOSFET Rise Time irf power mosfet
Contextual Info: SSR/U1N60A Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ ^DS on = Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 600V

Contextual Info: Advanced SSR/U1N60A Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V B Low Rds(0n) ■ 9-390 £1 (Typ.)

U2N60

Contextual Info: Advanced SSR/U2N60A Power MOSFET FEATURES BVDSS - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-8 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V

SSR -100 DD

Contextual Info: SSR/U4N60A A dvanced Power MOSFET FEATURES BVDSS = 600 V Rugged Gate Oxide Technology ^DS on “ • ■ Lower Input Capacitance Improved Gate Charge _Q ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ V DS = 600V ■ Lower R ds(on) : 2.037 ii(T y p )

MOSFET SSR

Abstract: U1N60
Contextual Info: SSR/U1N60A P o w e r MOSFET FEATURES BV D SS • R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n = ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 25 |a.A (M ax.) @ V DS = 600V

U2N60

Contextual Info: Advanced SSR/U2N60A P o w e r MOSFET FEATURES BV DSS = 600 V • R ugged G ate O xide T e ch n o lo g y ^ D S o n ■ Lo w e r Input C a pa citance lD ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting ■ Lo w e r Leakage C urrent :25 |a.A (M ax.) @ V DS = 600V

Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA-SI 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)

7A SF

Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA-SI 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)

7A SF

Abstract: EDD2516KCTA
Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)

Contextual Info: TO SH IB A TSS5G45S, TSS5J45S TOSHIBA SOLID STATE AC RELAY • v mm v ■ v mmr g m wmr mmr wmr v ■ v v OPTICALLY ISOLATED, ZERO VOLTAGE TURN-ON, ZERO CURRENT TURN-OFF, NORMALLY OPEN SSR U nit in mm fi?n 2-^35 COMPUTER PERIPHERALS MACHINE TOOL CONTROLS DDArCCC

SSR -40 DD

Abstract: SSR -25 DD SSR -100 DD 861HSSR led 1 w 48 VDC voltage regulator SSR -60 DD
Contextual Info: R e l a y s S t a t e 861H Class 1, Division 2 Certified Solid State Relay GENERAL SPECIFICATIONS File No. E317746 www.magnecraft.com Class 1, Division 2 certification for use in hazardous locations IEC 60947-1 OUTPUT CHARACTERISTICS 861HSSR*-DD 861HSSR*-AC-1

SSR -25 DD

Abstract: SSR -100 DD 48 VDC voltage regulator 861HSSR SSR -40 DD mosfet current limiter E317746
Contextual Info: R e l a y s S t a t e 861H Class 1, Division 2 Certified Solid State Relay GENERAL SPECIFICATIONS File No. E317746 www.magnecraft.com Class 1, Division 2 certification for use in hazardous locations IEC 60947-1 Output Characteristics 861HSSR*-DD 861HSSR*-AC-1

Contextual Info: IL329 SIEMENS Optically Coupled Telecom Switch Preliminary Data Sheet FEATURES • Solid state relay and AC input • Optocoupler Package— Single 18 Pin • I/O Isolation, 2500 VRMS • Surface Mountable • Optocoupler - Bidirectional C urrent Detection

SSR -100 DD

Abstract: SSR -25 DD SSR -60 DD IGBT SSR ac ssr SSR -40 DD SSR G THYRISTOR H 1500 three phase motor h brige reversing ssr
Contextual Info: Type Designation Solid State Relay Thyristor/Diode SMTC1-1500F-16-LGD12 SM - Sempo trademark T - thyristor-thyristor module; D - diode-diode module; A - semiconductors A series; C - semiconductors C series; - group of repetitive peak off-state and reverse voltage:

zilog Smart usb cable schematic

Abstract: zilog Smart serial cable schematic Zilog Serial Smart Cable schematic CPC1020 solid state relay RD0006-SC01 Clare Relay SSR -25 DD optomos relay UM0181
Contextual Info: Reference Design Mini-Z Solid State Relay Design Board RD000702-1011 Overview The Solid State Relay SSR Design Board, a complete and easy-to-use development platform for Zilog’s series of Mini-Z stamp modules, is designed to provide engineers, students

Solid State Relays

Abstract: 8501CT1002 A 3150 V schneider overload relay WIRING DIAGRAM SSR -60 DD Triac AC INRUSH CURRENT LIMITER 70S2-01-A-03-V SSR220DIN-AC22 semiconductors cross reference Triac INRUSH CURRENT LIMITER
Contextual Info: Magnecraft Solid State Relays Catalog 2010 Contents Magnecraft® Solid State Relays „„ Series

ECC89

Abstract: STR 6267 str g 5551 6C51H-B 6N3C ecc189 6H13C 6l6gt str f 6267 6CM5
Contextual Info: 6 Z a 121200 MOSKVA G 200 ELECTRONQRGTECHNICA 5 2 ELORG MOSKVA 200 0 240-96-07 5 3 411.386 REPLACEMENT GUIDE for USSR and FOREIGN ELECTRONIC TUBES U SSR - M O SC O W Type of U SSR Foreign eq u ivalen ts iA in 1147c 1142111 31422c 5J1038M 5I43C 5I44M K 5I44C

Application Note 60

Abstract: spice model TRIAC OUTPUT OPTOCOUPLER phototransistor spice model phototriac Spice sSR spice model spice model solid state relay IN5235 mosfet dc switch arcing spice model exercise "P-Channel JFET"
Contextual Info: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers Application Note 60 SSR Design Using VO1263 INTRODUCTION A solid state relay SSR is a semiconductor device that can be used in place of a mechanical relay in many applications to switch electricity to a load. SSRs are purely electronic and