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    ST342 Search Results

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    ST342 Price and Stock

    Samtec Inc SFSST-34-28-G-06.00-DR-NDS

    Cable Assembly Discrete Wire 0.152m 34 POS Discrete Wire Housing to 34 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: SFSST-34-28-G-06.0)
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    Master Electronics SFSST-34-28-G-06.00-DR-NDS
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    Samtec Inc SFSST-34-28-G-06.00-S

    Cable Assembly Discrete Wire 0.152m 34 POS Discrete Wire Housing RCP - Bulk (Alt: SFSST-34-28-G-06.0)
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    Master Electronics SFSST-34-28-G-06.00-S
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    Samtec Inc SFSST-34-28-G-06.00-D-NDS

    Cable Assembly Discrete Wire 0.152m 34 POS Discrete Wire Housing to 34 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: SFSST-34-28-G-06.0)
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    Master Electronics SFSST-34-28-G-06.00-D-NDS
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    Samtec Inc SFSST-34-28-G-06.00-SR

    Cable Assembly Discrete Wire 0.152m 34 POS Discrete Wire Housing RCP - Bulk (Alt: SFSST-34-28-G-06.0)
    Free Sample
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    Master Electronics SFSST-34-28-G-06.00-SR
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    ST342 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ST3426 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST3426 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These


    Original     		PDF ST3426 ST3426 OT-23 ON410 STN3426

    Untitled

    Abstract: No abstract text available
    Text: ST3421SRG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST3421SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF ST3421SRG ST3421SRG OT-23 -60V/-5 150m-ohm -60V/-2 185m-ohm

    MOSFET N-CHANNEL 60v 60A

    Abstract: No abstract text available
    Text: ST3422A N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These


    Original     		PDF ST3422A ST3422A OT-23-3L STN3422A MOSFET N-CHANNEL 60v 60A

    Untitled

    Abstract: No abstract text available
    Text: ST3424 N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The ST3424 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These


    Original     		PDF ST3424 ST3424 OT-23 STN3424 OT-23

    n-channel, 60v, 60a

    Abstract: MARKING CODE YA TRANSISTOR ST3422A 5.8A, 25V, N Channel MOSFET
    Text: 3422A ST ST3422A N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These


    Original     		PDF ST3422A ST3422A OT-23-3L STN3422A n-channel, 60v, 60a MARKING CODE YA TRANSISTOR 5.8A, 25V, N Channel MOSFET

    seagate service manual

    Abstract: right angle 68 pin MALE PCB SCSI CONNECTOR ST31051 ST32151N ST32155 ST31055N ST32151 Seagate ST31051N ST32155N
    Text: . Hawk 2XL Disc Drive . ST32151N/W/WC, ST31051N/W/WC . ST32155N/W/WC, ST31055N/W/WC .


    Original     		PDF ST32151N/W/WC, ST31051N/W/WC ST32155N/W/WC, ST31055N/W/WC ST32155N/W/WC; seagate service manual right angle 68 pin MALE PCB SCSI CONNECTOR ST31051 ST32151N ST32155 ST31055N ST32151 Seagate ST31051N ST32155N

    2SB187

    Abstract: 2SB186 2SB185 2SB178 OC59 Datasheet of 2SB178 OC75 OC26 OC71 equivalent 2T301
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* hFE Ic (ºC) VCE(V) (MHz) (mA) Pc Tj (mA) (mW) Cob (pF) 2SB101 -30 -10 -50 125 75 1.2 2SB102 -30 -10 -50 180 75 1.2 2SB103 -30


    Original     		PDF 2SB101 2SB102 2SB103 2SB104 2SB105 2SB106 2SB107 2SB107A 2SB108 2SB108A 2SB187 2SB186 2SB185 2SB178 OC59 Datasheet of 2SB178 OC75 OC26 OC71 equivalent 2T301

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


    OCR Scan     		PDF S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V

    ST5420

    Abstract: ST5451 br b2d
    Text: • 7^2^237 0D4S212 2TT ■S6TH _ SGS-THOMSON ST5420 SID-iiW : S/T INTERFACE DEVICE WITH MICROWIRE/DSI ADVA N C E DATA As specified in I.430, full-duplex transmission at 192kb/s is provided on separate transmit and receive twisted wire pairs using inverted Alternate Mark In­


    OCR Scan     		PDF 0D4S212 ST5420 144KBIT/S ST5075 tiB8ST542B-B7 H88ST542B-BB 004523B ST5420 ST5451 br b2d

    OC75

    Abstract: 6012B OC71 2Sd178 ST343 ST341 2S150 2S161 2S162 2S163
    Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SD31 2SD32 2SD178 OC75 6012B OC71 ST343 ST341 2S150 2S161 2S162 2S163