STATIC RAM FUJITSU Search Results

Static RAM fujitsu

Abstract: MB81C1002A
Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET MB81C1002A-60/-80/-10 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C1002A is CMOS fully decoded dynamic RAM organized as 1,048,576 words x

Contextual Info: November 1989 Edition 1.1 FUJITSU DATA SHEET MB81C4258-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C4258 is CMOS fuBy decoded dynamic RAM organized as 262,144 words x 4

Contextual Info: November 1989 Edition 1.1 FUJITSU DATASHEET MB81C1002-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C1002 is CMOS fully decoded dynamic RAM organized as 1,048,576 words x 1

Contextual Info: November 1989 Edition 1.1 FUJITSU DATASHEET MB81C4258-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C4258 is CMOS fully decocted dynamic RAM organized as 262,144 words x 4

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA S H EE T MB81C4258A-60/-80/-10 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C4258A is CMOS fully decoded dynamic RAM organized as 262,144 words x 4

T3A3

Contextual Info: November 1989 Edition 1.1 — = FUJITSU DATASHEET MB81C1002-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu M B81C 1002 is CMOS fuHy decoded dynamic RAM organized as 1,046,576 words x 1

Contextual Info: S71GL064A based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 64 Megabit (4 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8 Megabit (1M/512K x 16-bit) Pseudo Static RAM / Static RAM ADVANCE Distinctive Characteristics MCP Features

63 ball fbga thermal resistance spansion

Abstract: S29AL S29AL016M S71AL016M S71AL016M40 spansion solder profile
Contextual Info: S71AL016M Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 16 Megabit (1 M x 16-bit) CMOS 3.0 Volt-only Flash Memory and 4 Megabit (256K x 16-bit) Static RAM/ Pseudo Static RAM ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

Contextual Info: DUAL PORT STATIC RAM 2K x 8 -B IT CMOS FUJITSU M B8421/22-90 MB8421/22-90L MB8421/22-12 MB8421/22-12L May 1989 Edition 2.0 DUAL PORT STATIC RAM 2K X 8-BIT CMOS The Fujitsu MB8421/MB8422 are 2K by 8 dual-port high-perform ance Static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

Contextual Info: DUAL PORT STATIC RAM 2K x 8 -B IT CMOS FUJITSU M B8421/22-90 MB8421/22-90L MB8421/22-12 MB8421/22-12L May 1989 Edition 2.0 DUAL PORT STATIC RAM 2K X 8-BIT CMOS The Fujitsu MB8421/MB8422 are 2K by 8 dual-port high-perform ance Static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use

SA1127

Abstract: SA1115 JEDEC Matrix Tray outlines SA1117
Contextual Info: S71PL127JB0/S71PL129JB0/S71PL064JB0 with pSRAM Type 2, Rev D based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64 Megabit (8/4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 32 Megabit (2M x 16-bit) Static RAM/Pseudo Static RAM

spansion S29GL064

Abstract: bfw 10 transistor S29GL064 S71GL064A S71GL064A08-0B S71GL064A08-0F S71GL064A80-0K S71GL064A80-0P s29glxxxa Stacked 4MB Flash and 1MB SRAM
Contextual Info: S71GL064A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 64 Megabit (4 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8 Megabit (1M/512K x 16-bit) Pseudo Static RAM / Static RAM ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

Mcp90

Abstract: MCP78 032J mcp68
Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM

S71PL064JA0

Abstract: S71PL064JB0 S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 PL032J Spansion s29pl127j
Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116

MB81C258-12

Abstract: c258 MB81C258 MB81C258-10
Contextual Info: FU JITSU 262144 BIT CMOS STATIC COLUMN DYNAMIC RAM MB81C258-10 MB81C258-12 MB81C258-15 1 1 1 O c to b e r 1 9 8 8 E d itio n 3 .0 262,144 x 1 BIT CMOS STATIC COLUMN DYNAMIC RAM The Fujitsu MB 81C258 is CMOS static colum n dynam ic random access memo­ ry, SC-DRAM, w hich is organized as 262144 w ord by 1 bit. This SC-DRAM is

MCP 90

Abstract: bfw 10 transistor transistor marking A21 S71PL064 bfw resistor S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80
Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and SRAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/ 32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA S H E E T MB81C1002A-60/-80/-W C M O S 1,048,576 BIT STATIC COLUM N M O D E DYNAM IC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu M B 8 1 C 1 0 0 2 A is C M O S fully decoded dynamic R A M organized a s 1,046,576 words x

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET MB81C4258A-60/-80/-10 C M O S 1,048,576 BIT STATIC COLUM N M O D E DYNAM IC RAM C M O S 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu M B 8 1 C 4 2 5 8 A is C M O S fully decoded dynamic R A M organized a s 262,144 words x 4

mb818251

Contextual Info: August 1993 Edition 1.0 FUJITSU DATA SHEET M B 8 18 2 5 5 -70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818255 is a fully decoded dual port CMOS Dynamic RAM (DRAM) 256K words by 8 bits random access parallel port and 512 words by 8 bits Static RAM (SRAM)

TMS 3455

Abstract: MB818251 Furukawa Electric N4140
Contextual Info: August 1993 Edition 1.0 FUJITSU DATA S H E E T M B 8 18253-70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818253 is a fully decoded dual port CMOS Dynamic RAM (DRAM) 256K words by 8 bits random access parallel port and 512 w ords by 8 bits Static RAM (SRAM)

MB8114

Contextual Info: MB 8414E CMOS 4096-BIT STATIC RANDOM ACCESS MEMORY rT Tï TTCi ï S -3 £ . D z'ùr 0024 93 F uX T-Z July 1979 LOW POWER 4 K -B IT 1024 x 4 CMOS STATIC RAM The Fujitsu MB 8414 is a 1024 w ord by 4 b it static random access mem ory 1024 words by 4 bits organization