SUB60N06 Search Results
SUB60N06 Price and Stock
Vishay Siliconix SUB60N06-18 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SUB60N06-18 | 458 |
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Vishay Intertechnologies SUB60N06-18Trans MOSFET NCH 60V 60A 3Pin2Tab TO263 (Alt: SUB60N06-18) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SUB60N06-18 | 26 Weeks | 800 |
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SUB60N06 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SUB60N06-18 |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | |||
SUB60N06-18 | Vishay Intertechnology | N-Channel 60-V (D-S), 175°C MOSFET | Original | 73.47KB | 4 | |||
SUB60N06-18-E3 |
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Transistor Mosfet N-CH 60V 60A 3TO-263 | Original | 104.74KB | 5 | |||
SUB60N06-18 SPICE Device Model |
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N-Channel Enhancement-Mode Transistor | Original | 174.89KB | 3 |
SUB60N06 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SUB60N06Contextual Info: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
SUP/SUB60N06-18 S-60454Rev. 10-Apr-06 SUB60N06 | |
sup60n06-18
Abstract: SUB60N06-18
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Original |
SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 57253--Rev. 24-Feb-98 sup60n06-18 SUB60N06-18 | |
SUB60N06-14
Abstract: p60n
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OCR Scan |
SUP/SUB60N06-14 -220A SUB60N06-14 p60n | |
Contextual Info: SUP/SUB60N06-18 VISHAY Siliconix N-Channel 60-V D-S , 175 °C MOSFET Product Summary V(BR)DSS (V ) r DS(on) (£2) I d (A ) 60 0.018 60 TO-220AB D Q “ cT pO'N ’ ss& TO-263 G D S Top View 6 Top View s SUB60N06-18 SUP60N06-18 N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) |
OCR Scan |
SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 O-220AB O-263tors S-57253â 24-Feb-98 | |
sub60n06
Abstract: sup60n06-18 SUB60N06-18
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SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 08-Apr-05 sub60n06 sup60n06-18 SUB60N06-18 | |
bma 023
Abstract: SUB60N06-14 SUP60N06-14
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OCR Scan |
sup/sub60n06-14 O-220AB SUP60N06-14 O-263 SUB60N06-14 O-220AB O-263) O-263 A554735 bma 023 SUB60N06-14 SUP60N06-14 | |
SUB60N06-18
Abstract: 2364 diode SUB60N06 transistor 2364
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SUP/SUB60N06-18 0-to-10V 09-Apr-03 SUB60N06-18 2364 diode SUB60N06 transistor 2364 | |
Contextual Info: SUP/SUB60N06-18 Siliconix N-Channel 60-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) |
Original |
SUP/SUB60N06-18 O-220AB O-263 SUP60N06-18 SUB60N06-18 O-220AB O-263) O-263 S-57253--Rev. 24-Feb-98 | |
38-333Contextual Info: T em ic SUP/SUB60N06-18 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary RfDSi <V > • taK n O ) 60 0.018 60 TO-220AJB o T O -2 6 3 ■«Jh D R A I N c o n n e c te d to T AB CDS Top V iew G D S S U B 6 0 N 0 6 -1 8 |
OCR Scan |
SUP/SUB60N06-18 O-220AJB 06-1X P-38333-- 38-333 | |
SUP60N06-18
Abstract: SUB60N06-18 SUB60N06
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Original |
SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 O-220AB O-263) O-263 S-47970--Rev. 08-Jul-96 SUP60N06-18 SUB60N06-18 SUB60N06 | |
SUB60N06-08Contextual Info: T e m ic SUB60N06-08 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (ß ) I d (A) 0.008 603 60 D p TO-263 ( 1 o jj u y DRAIN connected to TAB G D S Top View s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) |
OCR Scan |
SUB60N06-08 O-263 SUB60N06-08 | |
SUB60N06-18
Abstract: SUP60N06-18
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Original |
SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 O-220AB O-263) O-263 S-47970--Rev. 08-Jul-96 SUB60N06-18 SUP60N06-18 | |
SUB60N06
Abstract: SUP60N06 B0905
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SUP/SUB60N0618 O220AB SUB60N0618 SUP60N0618 O220AB P38333Rev. SUB60N06 SUP60N06 B0905 | |
TR1111Contextual Info: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
SUP/SUB60N06-18 18-Jul-08 TR1111 | |
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
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STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 | |
pulse load resistors wattage calculation
Abstract: zener diode 18V 1W, 5% philips BZX84C18 BZX84C8V2 IRF7822 MIC2584 MIC2585 Si7892DP
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MIC2584/2585 MIC2584/MIC2585 MIC2584 MIC2585 MIC2584 16-pin 24-pin MIC2584/85 MIC2585 pulse load resistors wattage calculation zener diode 18V 1W, 5% philips BZX84C18 BZX84C8V2 IRF7822 Si7892DP | |
MIC2182
Abstract: Thermal Shut Down Functioned MOSFET 200 Ampere pmosfet power transistor c 5664 LTC1642 MIC2085 MIC2086 Si7892DP TCR22-4 ZTX788A
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MIC2085/MIC2086 MIC2085 MIC2086 MIC2085and 16-pin 20-pin MIC2085/86 M9999-050406 MIC2182 Thermal Shut Down Functioned MOSFET 200 Ampere pmosfet power transistor c 5664 LTC1642 Si7892DP TCR22-4 ZTX788A | |
IRFZ44N complementary
Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
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BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365 | |
TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
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1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 | |
T0252
Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
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OCR Scan |
SMB60N03-10L SMP60N03-10L SMD30N03-30L SMU30N03-30L SUD30N03-30 SUD50N03-10 SUB75N05-06 SUP75N05-06 SUD45N05-20L SMD25N05-45L T0252 SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251 | |
mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
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2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L | |
BAT45C
Abstract: phd55n03 MOTHERBOARD CIRCUIT diagram explained 16550C power supply tracks of computer motherboard MOTHERBOARD pcb power-on CIRCUIT diagram ADM1051JR SUB60N06-18 8205 mosfet ADM1051
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ADM1051/ADM1051A ADM1051A ADM1051/ADM1051A O-220 C00400 BAT45C phd55n03 MOTHERBOARD CIRCUIT diagram explained 16550C power supply tracks of computer motherboard MOTHERBOARD pcb power-on CIRCUIT diagram ADM1051JR SUB60N06-18 8205 mosfet ADM1051 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent |