SWICHING Search Results

Contextual Info: TK13H90A1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type MACHⅡ π-MOSIV TK13H90A1 Swiching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.78 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.)

DKs smd marking

Abstract: marking AF BCX42 high voltage swiching transistors marking AF SOT
Contextual Info: Transistors SMD Type PNP Silicon AF an Swiching Transistors BCX42 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High breakdown voltage 1 Low collector-emitter saturation voltage 0.55 For general AF applications +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1

K25A10K

Abstract: TK25A10K TK25A10K3
Contextual Info: TK25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK25A10K3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)

Contextual Info: Product specification 1PS76SB62 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Ultra high swiching speed +0.1 2.6-0.1 Very low capacitance High breakdown voltage 0.475 1.0max 0.375 +0.05 0.1-0.02 Guard ring protected Two pin very small plastic SMD package.

FCA50CC50

Abstract: IG2U
Contextual Info: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the

transistor MJe13007

Abstract: mje13007 equivalent MJE13007 transistormje13007
Contextual Info: NPN SILICON TRANSISTOR MJE13007 ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT ABSOLUTE MAXIMUM RATINGS TA=25oC CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 8 80 Emitter-Base Voltage Collector Current

mtm13127

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . MTM13127 Silicon P-channel MOS FET For DC-DC converter circuits For swiching circuits • Overview  Package MTM13127 is the P-channel MOS FET that is highly suitable ofr DC-DC converter and other switching circuits.

5V SMPS charger circuit diagram

Abstract: 110V ac to 9V dc converter circuit 5V 2A SMPS circuit diagram charger 230 AC to 9V dc smps 230 AC to 5V dc smps smps 110v 1.6a 5v dc 500ma variable transformer 9V 1A smps PJM110 switching power transformator
Contextual Info: PJM110 High Voltage Power Switching Regulator T he M110CD/M110CZ high voltage power swiching output power up to 20W M110CZ with a variable AC input regulators use a breakthrough design to provide a low that ranges from 85V to 265V. cost, high efficiency off-line switcher solution for chargers,

FBA75CA45

Abstract: FBA75CA50
Contextual Info: MOSFET MODULE FBA75CA45/50 UL;E76102 （M） FBA75CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（ 2 devices are serial connected.） The mounting base of the module is electrically isolated from semiconductor elements for

sod-323t

Contextual Info: SCS355T SurfaceMount Swiching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 0805 Features 0.086 2.2 0.071(1.8) Designed for mounting on smal l surface High speed 0.057(1.45) 0.041(1.05) High mounting capability,strong surge withstand,

2SA571

Abstract: 2SC97A swiching TC5A high frequency amplifier TO-205MD
Contextual Info: r 2SC97A 2SC97A ij ^ NPN V h 7 > v > T . ? / N P N SILICON EPITAXIAL TRANSISTOR High Speed Switching, High Frequency Amplifier H f l H f f l/ln d u s t r i a l Use £ ^/FEATURES •800mA < tV 'iT 'C O iS JS X 'i f- v Large current high speed swiching. •

w241

Contextual Info: Ordering number : ENN6939 N-Channel Silicon MOSFET FW241 'SAMYO, Ultrahigh-Speed Swiching Applications Features Package Dimensions • T his c o m p o s ite device allow s high density m o u n tin g by unit : m m in corpo rating tw o M O S F E T chips in one p ackag e that

Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO

B1030

Abstract: high voltage swiching transistors swiching full KSC2752
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic Unit Collector- Base Voltage Collector-Em itter Voltage V cbO 500 V V cE O 400 V Emitter- Base Voltage VEbo 7 V

Contextual Info: TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 210 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 40 V)

Contextual Info: TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA1740TP SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1740TP is N-channel MOS FET device that features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications

K4207

Contextual Info: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78Ω (typ.) Absolute Maximum Ratings (Ta = 25°C)

FAIRCHILD DIODE

Contextual Info: FDLL485B High Conductance, Low Leakage Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the

FBA75CA45

Abstract: FBA75CA50
Contextual Info: MOSFET MODULE FBA75CA45/50 UL;E76102 （M） FBA75CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（ 2 devices are serial connected.） The mounting base of the module is electrically isolated from semiconductor elements for

Contextual Info: FM220A THRU FM2100A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability

Contextual Info: FM220 THRU FM2100 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability

Contextual Info: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 RC2000C-S Series Common Mode Reactor Single phase 2 lines/Length mounted type Application Noise suppression for Swiching power supply/Invreter Specifications RC2000C-SA Series Parts No. Rated Voltage[VAC] Rated Current[A] Inductance[mH typ] Resistance[m ohm max]

R1200F

Abstract: R1500F R1800F R2000F
Contextual Info: JGD R1200F THRU R2000F O HIGH VOLTAGE FSAT RECOVERY RECTIFIER VOLTAGE RANGE 1200 To 2000 Volts CURRENT 1.0 Ampere FEATURES DO-41 * Fast swiching * low leakage T * High current capability *-High reliability 1.0 2 5 .4 MIN * High surge capability .034(0 .9?