TC5A Search Results

tc25a4v

Abstract: hall current transducer 5A hall ac current transducer 10A tc50a4v
Contextual Info: Topstek Current Transducer TC5A . TC50A TC 5A~50A Features iHighly reliable Hall Effect device iCompact and light weight iFast response time iExcellent linearity of the output voltage over a wide input range iExcellent frequency response > 50 kHz iLow power consumption (9 mA nominal)

TMM24256P

Abstract: AF150 TC54256P TTL af tc54256ap
Contextual Info: TOSHIBA MOS MEMORY PRODOCTS TC54256AP/AF-150 DESCRIPTION The TC54256AP/AF is a 32,768 wo r d x 8 bit one time programmable read only memory, and molded in a 28 pin plastic package. The TC54256AP/AF's access time is 150ns and has low power standby mode which reduces the power dissipation without increasing access

tsop-ii 66 JEDEC TRAY

Contextual Info: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM Revision 1.5 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Contextual Info: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.5 March 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.5 Mar. 2005 128M GDDR SDRAM

2SA571

Abstract: 2SC97A swiching TC5A high frequency amplifier TO-205MD
Contextual Info: r 2SC97A 2SC97A ij ^ NPN V h 7 > v > T . ? / N P N SILICON EPITAXIAL TRANSISTOR High Speed Switching, High Frequency Amplifier H f l H f f l/ln d u s t r i a l Use £ ^/FEATURES •800mA < tV 'iT 'C O iS JS X 'i f- v Large current high speed swiching. •

p38ab

Abstract: lm 7812 cv TMP88CP38AN ic op35 p38a 3-38A-20 PIN DIAGRAM OF 8959 RBS 2116 BLF 278 P-SDIP42-600-1
Contextual Info: TOSHIBA TENTATIVE TOSHIBA ORIGINAL CMOS 8-BIT MICROCONTROLLER TLCS—870/X SERIES TMP88CP38AN/AF , TMP88CM38AN/AF DATA BOOK 1st Edition 2000-11-07 TOSHIBA CORPORATION ROM corrective function <add note> Note3: 3-38-33 RAM area which is used for ROM correction circuit in TMP88CM/P38A can use

TCCR54

Abstract: 74HCu04 oscillator application note TBC10 TR-49 sck tr38
Contextual Info: TMP93CF76/CF77/CW76/CU76/CT76 CMOS 16-Bit Microcontroller TMP93CF76/CF77/CW76/CU76/CT76 1. Outline and Feature TMP93CF76/CF77/CW76/CU76/CT76 are a high-speed advanced 16-bit microcontroller developed for application with VCR system control, software servo motor control, VFT driver and

Contextual Info: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.4 February 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.4 Feb. 2005 128M GDDR SDRAM

tmpa8829

Abstract: TMPA88 TMPA8827PSNG TMPA8827 TMPA8829CSNG TMPA8829CRNG tmpa8829cpng TMPA8829CMNG tmpa8829 datasheet 360 2002b
Contextual Info: TMPA8829CMNG /CPNG /CRNG /CSNG TOSHIBA Integrated Circuit TMPA8829CMNG /CPNG /CRNG /CSNG MCU and Signal Processor for a PAL/NTSC TV The TMPA8829CMNG /CPNG /CRNG /CSNG is an integrated circuit for a PAL/ NTSC TV. A MCU and a TV signal processor are integrated in a 64-pin shrink DIP package. The MCU contains

t127b

Abstract: t2d t3d t122 25 10 Diode T3D 57 440MX 82440MX t127 Diode T3D 54 T122 T3D 62
Contextual Info: Intel 440MX Chipset Electrical and Thermal Specification Datasheet Addendum Product Features • ■ ■ ■ ■ Processor Host Bus Support — Optimized for these 100 MHz or 66 MHz processors: − Mobile Intel® Pentium® III Processor − Intel®Pentium III Processor – Low Power

Broadcom product roadmap

Abstract: 65-nm 65nm sources tsmc 130nm metal process 2015 static ram BROADCOM "heat sink" Qualcomm "power management" 2010 WP-01002-1 65nm
Contextual Info: White Paper Altera’s Strategy for Delivering the Benefits of the 65-nm Semiconductor Process Introduction Altera's strategy for delivering the benefits of the 65-nm semiconductor manufacturing process focuses on leveraging advanced technologies and methods to provide the most capable and highest performance devices at the lowest cost,

TC54512AF-20

Abstract: TC54512AP TC54512AP-20 TC57512AD
Contextual Info: 65,536 WORDS x 8 BITS CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY DESCRIPTION The TC54512AP/AF is a 65,536 w o r d x 8 bit CMOS one time programmable read only memory, and molded in a 28 pin plastic package. For read operation, the TC54512AP/AF&#39;s access time

K4D261638F-TC50

Abstract: K4D261638F K4D261638F-TC25 K4D261638F-TC2A K4D261638F-TC33 K4D261638F-TC36 K4D261638F-TC40 samsung ddr sdram 128Mbit
Contextual Info: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM Revision 1.5 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TMP93CF77

Abstract: TBC10 MPX audio ENCODER sck tr38
Contextual Info: TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/L Series TMP93CF76 TMP93CF77 TMP93CW76 TMP93CU76 TMP93CT76 Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”.