T 250 N 1200 Search Results

IC LA 4127

Contextual Info: INTERNATIONAL RECTIFIER SbE D • 4S5S4SS Q010b77 b International Iio r I Rectifier T -O l-ô t Rectifiers, Standard Recovery 150 TO 275 AMPS Part v RRM TC 'FSM<1> V (A) (°C) (A) (A) (V) 400 400 ' 600 600 800 800 1000 1000 1200 1200 1400 1400 1600 1800

MIMMG150DR120UZA

Contextual Info: MIMMG150DR120UZA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

MIMMG150DR120UA

Contextual Info: MIMMG150DR120UA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

MIMMG150DR120UK

Abstract: AC welder circuit diagram
Contextual Info: MIMMG150DR120UK 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

Contextual Info: TOSHIBA MIG10Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT M IG10Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 30 10A/1200V IGBT

MIMMG200DR120UZA

Contextual Info: MIMMG200DR120UZA 1200V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

FX22H472

Abstract: FX22G153 fx22w FX22W153 FX22W123 FX22G123 FX22L102 FX22G682 FX22H392 JIS-C-5104-4
Contextual Info: FX2 Schraubanschluss / Screw-Terminal 12000h / 85°C ŹSpezifikationen / Specifications Items Characteristics Temperaturbereich / Temperature range -40°C ~ + 85°C Nennspannung / Rated voltage 350V - 550V Spitzenspannung / Surge voltage Leckstrom bei 20°C

Contextual Info: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous

MIMMG150W120X6TN

Contextual Info: MIMMG150W120X6TN 1200V 150A Six-Pack Module RoHS Compliant FEATURES □ High level of integration 3 □ IGBT CHIP Trench+Field Stop technology □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery

dsei 101-12a

Abstract: E72873
Contextual Info: DSEI 2x 101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 VRRM = 1200 V IFAVM = 2x 91 A trr = 40 ns miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-12A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5

Contextual Info: VS-ST230SPbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors Stud Version , 230 A FEATURES • Center amplifying gate • International standard case TO-209AB (TO-93) RoHS • Hermetic metal case with ceramic insulator COMPLIANT (Also available with glass-metal seal up to 1200 V)

HA60125

Abstract: HA6025 HA6050 HA6090 HD60125 HD6025 HD6050 HD6090 RS-443 25A 600VAC Phase control SCR
Contextual Info: Series HA60/HD60 25-125Amp, AC OUTPUT, 600 VAC Zero Voltage and Random Turn-On Sw itching Panel Mount 1200V Blocking Capability 600Vac - the preferred choice in Canada CRYDOM M O D EL N U M B ERS AC CONTROL D C CONTROL Featuring state-of-the-art Surface Mount Technology, these SPST-NO

UC3845BN USED CIRCUIT

Abstract: MBR370 UC3845BN AN1327 AN569 MOC8102 MTP3N120E MUR430 MTP3N120E-D mosfet transistor 800 volts.400 amperes
Contextual Info: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS

Thyristor ys

Abstract: thyristor 15V 1000A QM1200
Contextual Info: SG1200EX24 TOSHIBA GATE TURN-OFF THYRISTOR SG1200EX24 TENTATIVE DATA SG1200EX24 U nit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage : VDRM = 2500V R.M.S On-State Current : lT(RMS) = 500A Peak Turn-Off Current : It GQM = 1200A

15N120

Contextual Info: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

30-12CR

Contextual Info: DSEP 30-12CR Advanced Technical Information HiPerDynFREDTM IFAV = 30 A VRRM = 1200 V trr = 20 ns with soft recovery Electrically Isolated Back Surface VRSM VRRM V V 1200 1200 Type A C ISOPLUS 247TM C A Isolated back surface * DSEP 30-12CR A = Anode, C = Cathode

DO-203AA

Abstract: DO203AA 12FR
Contextual Info: 12F R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 12 A FEATURES • High surge current capability RoHS • Stud cathode and stud anode version COMPLIANT • Wide current range • Types up to 1200 V VRRM • RoHS compliant • Designed and qualified for industrial and consumer level

TC14419

Contextual Info: 12F R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 12 A FEATURES • High surge current capability RoHS • Stud cathode and stud anode version COMPLIANT • Wide current range • Types up to 1200 V VRRM • RoHS compliant • Designed and qualified for industrial and consumer level

6MBP150RA120

Contextual Info: 6MBP150RA120 1200V / 150A 6 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

MUR30120PT

Contextual Info: MUR30120PT Ultra Fast Recovery Diodes A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MUR30120PT VRSM V 1200 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26

20ETF

Abstract: 20ETF12S AN-994 SMD-220 20ETF12SPbF
Contextual Info: Bulletin I2208 03/05 QUIETIR Series 20ETF12SPbF FAST SOFT RECOVERY RECTIFIER DIODE VF < 1.31V @ 20A Lead-Free "PbF" suffix IFSM = 355A VRRM= 1200V Description/ Features The 20ETF12SPbF fast soft recovery QUIETIR rectifier series has been optimized for combined

dsi30 diode

Abstract: 3012A
Contextual Info: DSI 30 VRRM = 800-1600 V IF AV M = 30 A Rectifier Diode VRSM V VRRM TO-220 TO-263 DSI 30-08A DSI 30-12A DSI 30-14A DSI 30-16A DSI 30-08AS DSI 30-12AS DSI 30-14AS DSI 30-16AS A C TO-263 AA V A 800 1200 1400 1600 Symbol Conditions IF(AV)M TC IFSM TVJ = 45°C;

C2D05120

Abstract: C2D05120A
Contextual Info: C2D05120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

IXSN55N120A

Abstract: on 3150
Contextual Info: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous