SG1200EX24 Search Results

Thyristor ys

Abstract: thyristor 15V 1000A QM1200
Contextual Info: SG1200EX24 TOSHIBA GATE TURN-OFF THYRISTOR SG1200EX24 TENTATIVE DATA SG1200EX24 U nit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage : VDRM = 2500V R.M.S On-State Current : lT(RMS) = 500A Peak Turn-Off Current : It GQM = 1200A

Contextual Info: TOSHIBA SG1200EX24 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: V DRM = 2 5 0 0 V • R.M.S. O n-State Current: h RMS = • Peak Turn-Off Current: ' t g q m = 12 0 0 A • Critical Rate of Rise of O n-State Current: di/dt = 250A/JIS

SG1200EX24

Contextual Info: TO SH IBA SG1200EX24 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION • • • • • SG1200 EX 24 Unit in mm Repetitive Peak Off-State Voltage : V d r m = 2500 V R.M.S On-State Current : I t RMS = 500 A Peak Turn-Off Current : I t GQM = 1200 A Critical Rate of Rise of On-State Current : di / dt = 250 A / /¿s

snubber diode

Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Contextual Info: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11

100EXG11

Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Contextual Info: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26

50HzH

Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEM ICONDUCTOR TO SHIBA TECHNICAL S G1200 EX 24 DATA SG1200EX24 INVERTER APPLICATION U nit in mm Repetitive Peak Off-State Voltage R.M.S On-State C urrent : I t Peak Turn-Off C urrent (R M S ) = : V d RM = 2500V 5^0A : It GQM = 1200A

500EXH21

Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Contextual Info: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that

gate turn off thyristors

Abstract: 500EXH21 800gxhh21 800exh21
Contextual Info: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that

ITGQM

Contextual Info: T O S H IR A G A T F T U R N - O F F T H Y R IS T O R SEM ICO NDU CTO R TO SHIBA TECHNICAL S G 1200 EX 24 DATA SGI 2 00E X 24 INVERTER APPLICATION U nit in mm • Repetitive Peak Off-State Voltage : V j}r m = 2500V • R.M.S On-State C urrent : It (RMS)= 500A