T0226AA Search Results

N-Channel JFET FETs

Abstract: T072
Contextual Info: T emic S e m i c o n d u c t o r s ^ S08 T052 T0220 T0237 T092 <2 lead T092 3 lead) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode (continued) Part N um ber | Vm ¿t- (••) II - «>-•-¿j Î ' ¿.A.: T0226AA (T092) VP0300L -3 0 2.5 -4.5 30 60

2410m

Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Contextual Info: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■

Contextual Info: B 62 9-97 J310 N -C H A N N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXER Absolute maximum ratings at TA * 25°C • OSCILLATOR • VHF/UHF AMPLIFIER Reverse Gate Source Voltage - 25 V Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

BS170 MOTOROLA

Abstract: T0226 S-60
Contextual Info: BS170* CASE 29-04, STYLE 30 TO-92 T0-226AA M A X IM U M RATINGS Rating Symbol Value Unit D r a in - S o u r c e V o lta g e V DS 60 Vdc G a t e - S o u r c e V o lt a g e V GS D r a in C u r r e n t ! 1) 0 .5 'D T o t a l D e v ic e D is s ip a t io n (a T ^ = 2 5 CC

226AA

Abstract: T0-226AA T0236AB T0226AA
Contextual Info: Sm all-Signal Small-Signal DMOS Transistors % T0-236AB SOT-23 T0-226AA (TO-92) 219

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

to-226aa

Abstract: TO226AA T0-226AA CR16 J511
Contextual Info: T emic S e m i c o n d u c t o r s S08 T 078 T071 Small-Signal Diodes Part Number Nominal Forward Current mA Forward Current Tolerance (±%) Limiting Voltage Max (V) Peak Operating Voltage Min (V) Dynamic Impedance Min (kQ) Typ Knee Impedance (kQ) Package

Contextual Info: B 59 9-97 J232 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR AUDIO AMPLIFIER Absolute maximum ratings at TA= 25'C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Process NJ16

Contextual Info: B 60 9 -9 7 J304,J305 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATORS • VHF/UHF AMPLIFIERS A b s o lu te m a x im u m ra tin g s a t T A = 2 S ° C Reverse Gate Source & Reverse Gate Drain Voltage - 30 V Continuous Forward Gate Current

Contextual Info: B 53 9 -9 7 J1 7 6 J1 7 7 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • COMMUTATORS • ANALOG SWITCHES A bsolute m axim um ratin gs at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 30 V Continuous Forward Gate Current

Contextual Info: 9 -9 7 B 51 J111, J1 1 2 , J1 1 3 ^ H A N N E ^ iu C O N U U N G n O ^ E L M ^ ^ K A N s is T O R • CHOPPERS • COMMUTATORS • ANALOG SWITCHES Absolute maximum ratings at T* = 2 5 'C Reverse Gate Source & Reverse Gate Drain Voltage - 35 V Continuous Forward Gate Current

Contextual Info: 9 -9 7 B 49 J108, J109 N - C H A N N E L S IL IC O N J U N C T IO N F IE L D -E F F E C T T R A N S IS T O R • CHOPPERS • COMMUTATORS • ANALOG SWITCHES Absolute maximum ratings at Ta = 25*0 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

P1086

Abstract: P1087
Contextual Info: B 63 9 -9 7 P1086, PI 087 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • ANALOG SWITCHES Absolute maximum ratings at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 30 V 50 mA Continuous Device Power Dissipation

Contextual Info: 8-94 C 2 2N7000 N -C H A N N EL ENHANCEMENT M O D E VERTICAL D M O S FET Absolute maximum ratings at TA = 25°C • FAST SWITCHING • HIGH INPUT IMPEDANCE Drain Source Voltage Gate Source Voltage Continuous Drain Current Maximum Device Power Dissipation Thermal Resistance R thjA

mpsh69

Contextual Info: • D esigned fo r UHF/VHF A m p lifie r A p p lica tio n s • H igh C urre n t B a n d w id th P roduct f y = 2000 MHz a 10 m A d c MPSH69* CASE 29-04, STYLE 1 TO-92 (T0-226AA M A X IM U M RATINGS Symbol Value Unit Collector-Emitter Voltage Rating v CEO

mpsa16 motorola

Contextual Info: MPSA16 MPSA17* M A X IM U M RATINGS Symbol MPS-A16MPS-A17 Unit Collector-Emitter Voltage VCEO 40 Vdc Emitter-Base Voltage V ebo Rating 12 15 Collector Current — Continuous >C 100 mAdc Total Device Dissipation a Ta = 25°C Derate above 25CC Pd 350 2.8 mW

BF199

Contextual Info: BF199 CASE 29-04, STYLE 21 TO-92 T0-226AA M A X I M U M R A T IN G S Rating Symbol Value C o lle c to r -E m itte r V olta g e VCEO 25 Unit Vdc C o lle c to r-B a s e V olta g e VCBO 40 Vdc E m itte r-B a s e V olta g e vebo 4 .0 Vdc C o lle ctor C u rre n t - C o n tin u o u s

Contextual Info: B 22 9 -9 7 2N5484, 2N5485, 2N5486 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR • VHF/UHF AMPLIFIERS Absolute maximum ratings at T* » 25°C Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Power Dissipation Power Derating

NJ450

Contextual Info: B 50 9 -9 7 J110/J110A N -C H A N N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at 1> = 25’C • CHOPPERS • COMMUTATORS • ANALOG SWITCHES Reverse Gate Source & Reverse Gate Drain Voltage 50 mA 360 mW Power Derating J110 At 25°C free air temperature:

MAC974B

Abstract: MAC97B6 MAC97B8 MAC97-1 MAC97B-4 MAC974 MAC97B4 T0226AA MAC97-6 MAC97A4
Contextual Info: MOTOROU SEMICONDUCTOR Order this document by MAC97/D TECHNICAL DATA MAC9~~B Series Silicon Bidirectional Wiode Thyristors ●Motorola preferred devices ,{, .~, ,ivt. ,t:*.*,. ,“ ,:$$. >~.ci,. .$: TRIA@b<;,~ Mt {:;.+ G . . . designed for use in solid state relays, MPU interface, TTL logic and any other

KBL 103

Abstract: D0214AB D0-218AA D0218 T0263AB
Contextual Info: CASEDRAWINGS i\ i C NGi j i\j o i :c 0.034 0.86 0.028(0.71} DIA “T 0 .2 AC, :e i AM.y. 4 W ' t . I.sad ammeter is 0-026(0.66) tc -su fix't 0-023 (0 58) D0-2Q1AD -213AA (GL34) DQ-204AC (DO-15) H DQ-204AL (DO-41) D 0-213AB (GL41) 99 M D0-2Q4AP D 0-214AA (SMB)

Contextual Info: M AXIM U M R A TIN G S Symbol Value Unit D rain -S o u rce Voltage VDSS 60 Vdc D rairv G ate Vo ltage R g s = 1 M il vdgr 60 Vdc G ate-S o u rce Voltage — Co ntinuo us -N o n -re p e titiv e (tp ^ 50 /xs) VGS VGSM ±20 ±40 Vdc Vpk 'D 150 1000 Rating VN2222LL*