T0247AD Search Results

CS19-12H01

Abstract: CS8-12I02 CS45-16I01 TO-208AA CS23-08I02 T0-208AA CS19-12 T0208AA CS23 T0220AB
Contextual Info: ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TMpMCTOpbl $MpMbl IXYS np0M3B0flMTenb : IXYS f lM a n a 3 0 H p a 6 o H M X T e M n e p a iy p : o t - 4 0 ° a o K o fl: Tok CS8-12I02 CS19-12H01 CS23-08I02 CS45-16I01 [A] 25,0 29,0 50,0 75,0 HanpflweHMe

BYV255V200

Abstract: BYV255V-200 BYV54V200 DSEI2X61-12B BYV54V-200 DSEI2X121-02A 2X10 BYV42-200 BYV52PI200 DSEI2X31-06C
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics jen\ 495 739-09-95, 644-41-29 f lB O M H b ie B b in p A M M T e n b H b ie flM O A b i Kofl: [A] Hanp. [B] BYV255V200 BYV54V200 2x100 2x50 200 200 H eT K a T O fl ISOTOP v J P DSEI2X121-02A DSEI2X31-06C DSEI2X101-06A

SOT227B

Abstract: DSEI2X121-02A DSEI12-06A DSEI2X61-12b DSEI2*61-12 DSEI2X31-12B DSEI2*61 ixys dsei2x31-06c DSEP2X61-12A DSEP12-12A
Contextual Info: klH TEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten\ 495 739-09-95, 644-41-29 electronics flMOAbi FRED (Fast Recovery Epitaxial Diodes) $upMbi IXYS np0M3B0flMTenb f lM a n a 3 0 H p a ö o H M X T e M n e p a T y p Kofl: : IXYS : o t - 40oC f l o + 150oC V f npw [B]

LS T73

Abstract: BFC42
Contextual Info: nil IF t i mi BFC42 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 5 31 (0 209) 1 4» (0 0S8) rD i t 3S5 (0 140) 3 81 {Q 150) VDSS 1 (0 040) ^ Terminal 1 Terminal 3 I

BFC47

Contextual Info: Illl iF ti mi BFC47 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS S 31 (0 2 0 9 ) 1 4P 10 0S 9) 'DSS 0*0(001<| I D(cont) 1 01 (0 0 4 0 ) R DS(on) " 1 0 5 (0 4 3 0 f

T0247AC

Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m

IGBT 200A 1200V

Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D

KL SN 102 94v-0

Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Contextual Info: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results

BFC43

Contextual Info: mi iP É i llll BFC43 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) !DS(on) Terminal 1 Terminal 3 Gate Source Terminal 2 ABSOLUTE MAXIMUM RATINGS V DSS

BYS21-45

Abstract: BYS26-45 BYS21-90 BYS26 BYS21 BYS22-45 1N5817 1N5818 MBR2 1N5822
Contextual Info: klH TEPTEKC ww w.i-t.ru ¡nfo@ i-t.ru t B b i n p A M M T e n b H b ie A M O A b i Kofl: electronics en\ 095 739-09-95 c 6apbepoM 1N5817 1N5818 1N5819 BYS21-45 SB160 BYS21-90 BYS22-45 VRmax [B] 20 30 40 45 60 90 90 iFmax [A] 1,0 1,0 1,0 1,0 1,0 1,0 2,0 V f npw

ixfh26n60q

Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY

Contextual Info: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600

1ALF

Contextual Info: HER161PT TSC S thru HER167PT 16.0 AMPS. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE 50 tc 800 V olts CURRENT 16.0 A-poros T0-3P/T0-247AD FEATURES * Dual rectifier construction, positive center-tap * Plastic package has Underwriters Laboratory

D0213AA

Abstract: D0204AL G3-64 DO-218AA D0-213AA DO-213AB MELF ITO-22QAB SMA DO-214AB MPG06 T0226AA
Contextual Info: C£ L >G e n e r a l v S e m ic o n d u c t o r PRODUCTPACKAGES . * % TO-22QAC TQ-220AB IT0-22QAC ITO-22QAB 10-263 D;i PAK .x« isUiilJS KBPM GBPC - W . GBPC T0-247AD GB1 wmm$& ^ % DFS % DO-218AA x ASC 00 DO-215AA (SMBG) 00-21 SAB (SMCG) •SPSSiM •

Contextual Info: lili mi SEME BFC48 LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS ' 5 31 (0 209) 1 4» IP 0S9) 'DSS 0 40 (0 0161 0 70 (0 031) I D(cont) 1 01 (0 0 4 0 ) ^ R DS(on) I 10 5 |0 430)J

Contextual Info: lili e FFe iiii SEME BFC51 LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 5 31 (0 20» ) t * 9 (0 0 5 8 ) - fs|_ 3 J 5 (0 14 0) 3 11 (0 ISO) 'DSS 0 4 0 (0 016) I D(cont)

sot23 BS170

Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120

Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C u n o B b ie T p a H 3 M C T o p b i IG B T IX Y S C #epa npMMeHeHMa: b n po M biw ne rn-ib ix ycTaHOBKax M a n o fi m cpeflHeM m o w ,h o c tm , b npMBOAHbix CMCTeMax, b yd p o M C T B a x ynpaB ^eH M a, b 6 ecn p0B 0A H bix 6 no K ax riMTaHMA Arm

EGP300

Abstract: FEPI6GT ug2d equivalent FEP16FT equivalent fepi6 FEP30FP DO-214M FEP6DT equivalent FES16CT FES16DT
Contextual Info: FA S T E F F IC IE N T R E C T IF IE R S 10 A CASE TYPE 0.50 0.60 D0-Z13AA MINI'MELF UG06 1.0 00- 204AL DO-i?04AP 00-2 04AL «► I D0-204AP | I1 II % I V rrm (VOLTS) 50 fcGLMA UG06A# F6P1GA UF4001# FE1A UG1A# GI1001 100 COI M B UG06B# ESP18B UF4002# FE1B

AH DO214

Abstract: SMC C96
Contextual Info: v G eneral Se m i c o n d u c t o r PACKAG ING < Y >/.>/: V STANDARD ANTI-STATIC PACKAGE PACKAGE CODE CODES PACKAGING DESCRIPTION 1 2 2B 2D 2E 2F 2J 2L 2M 3 4 4A 4B 4C 4D 5 5C 6 7 8 9 51 52 2C 26 2K 53 54 4E 4F 4G 4H 55 5A 5B 43 44 56 57 58 59 9A 9C 60 61

Contextual Info: MBR4035PT AND MBR4045PT SCHOTTKY RECTIFIER VOLTA GE RANGE - 35 and 45 Volts CURRENT - 4 0 . 0 Amperes FEATURES T0-247AD 1— » .078 REF Cl.M — r . .203 5.16) .193(4.90) .313(7.95 •085 (2J6) .142(3.6) .07Ç(1.901 . £ IV .170 (4.3) _i- 10' TYP. V B0I H SIDES

Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D Ô S APT8075BNR APT8090BNR 800V 800V POWER MOS IVe 13.0A 0.7512 12.0A 0.90U UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V Parameter 'd C ontinuous Drain C urrent @ Tc - 25°C