T1101 Search Results

126ANS-T1098Z

Abstract: TOKO 126ans-t1094z 126ANS-T1110Z 126ans-t1106z 126ans-t1101z 126ANS-T1096Z 126ANS-T1105Z 126ANS-
Contextual Info: Sheet1 TYPE 7PA TOKO Part Number 126ANS-T1094Z 126ANS-T1095Z 126ANS-T1096Z 126ANS-T1097Z 126ANS-T1098Z 126ANS-T1099Z 126ANS-T1100Z 126ANS-T1101Z 126ANS-T1102Z 126ANS-T1103Z 126ANS-T1104Z 126ANS-T1105Z 126ANS-T1106Z 126ANS-T1107Z 126ANS-T1108Z 126ANS-T1109Z

6021 tube

Abstract: TWIN TRIODE 6350 6021 triode capacitor RGF rs tube subminiature tubes TWIN TRIODE ET-T1101A general electric
Contextual Info: ET-T1101A 6021 Page 1 12-56 TWIN TRIODE Five-Star Tube TUBES ★ ★ ★ ★ ★ FOR GENERAL-PURPOSE AMPLIFIER APPLICATIONS SHOCK, VIBRATION RATINGS HEATER-CYCLING RATING 8-LEAD SUBMINIATURE MEDIUM MU DESCRIPTION AND RATING' BASING D IAG RAM The 6021 is a subminiature medium-mu twin triode for use in generalpurpose amplifier applications. Each section has an individual cathode and is

54ACT11010

Abstract: 74ACT11010
Contextual Info: T11010, T11010 TRIPLE 3-INPUT POSITIVE-NAND GATES T0049— 2957, JULY 1987— REVISED MARCH 1990 • Inputs are TTL-Voltage Compatible 5 4A C T 11 0 10 . . . J P A C K A G E 74A C T11010 . . . D OR N PACKAGE Flow-Through Architecture to Optimize PCB

100 20L A1 diode

Abstract: SQD30N05-20L-GE3
Contextual Info: SQD30N05-20L www.vishay.com Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd 55 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A)

Contextual Info: SQD50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0041 ID (A) 50 Configuration Single TO-252 TrenchFET Power MOSFET Package with Low Thermal Resistance

sud35n10

Contextual Info: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

sud40n10-25-e3

Contextual Info: SUD40N10-25 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 40 0.028 at VGS = 4.5 V 38 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested

l 7251 wd

Abstract: nte CROSS-REFERENCE CTL2S l 7251 3.1 SPNS014 LT 7207 TMS370 SPNS014B 27282930 SPNSQ33B
Contextual Info: TMS370Cx6x 8-BIT MICROCONTROLLER SPNSQ33B - SEPTEMBER 1995 - REVISED MARCH 1996 1 CMOS/EEPROM/EPROM Technologies on a Single Device - Mask-ROM Devices for High-Volume Production - One-Time-Programmable OTP EPROM Devices for Low-Volume Production - Reprogrammable EPROM Devices for

mm-100-xxx

Abstract: microprocessor 80286 internal architecture mm-100-xx AMD "model 8" AMD Family 10h Processor Electrical Data Sheet mmx 166 id-20 innovation 80286 address decoder Ac-37-k amd 15h power
Contextual Info: Preliminary Information AMD-K6 -IIIE+ Embedded Processor Data Sheet Publication # 23543 Rev: A Amendment/0 Issue Date: September 2000 2000 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro

Contextual Info: TECHNICORP/ GREENRAY SSD D • 00^1=153 GQODSbQ Q * 7 0 6 1 | -p.SQ-<65 C C r een r av Industries, Inc. TEMPERATURE COMPENSATED CRYSTAL OSCILLATORS O scillator F eatures User B e n e fits • Excellent Stability W ithout Use of Oven • Compact Size & Light Weight

T1101

Contextual Info: T1101 Ordering number : ENA1166 SANYO Semiconductors DATA SHEET T1101 PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converters, relay drivers, lamp drivers, motor drivers. Features • • • •

Contextual Info: SUD50P04-08 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0081 at VGS = - 10 V - 50d 0.0117 at VGS = - 4.5 V - 48d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SQD40N04-10A www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.010 RDS(on) () at VGS = 4.5 V 0.014 ID (A)

Contextual Info: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available

Contextual Info: SQD50P08-25L Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • TrenchFET Power MOSFET

Contextual Info: SQD50N06-09L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.013 ID (A)

Contextual Info: SQD50N03-06P Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd

sqd19p06

Abstract: diode 1919
Contextual Info: SQD19P06-60L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) (Ω) at VGS = - 10 V 0.055 RDS(on) (Ω) at VGS = - 4.5 V 0.100 ID (A) • TrenchFET Power MOSFET

Contextual Info: SUD50P06-15 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V d - 50 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Load Switch

Contextual Info: SUD50N03-11 Vishay Siliconix N-Channel 30-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.011 at VGS = 10 V 50 0.017 at VGS = 4.5 V 43 VDS (V) 30 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

cx3804

Abstract: pegatron pegatron A35 A35 pegatron diode c0510 pegatron a24 Cx3808 q8607 IT8752E tpc8118
Contextual Info: 5 4 3 M52V BLOCK DIAGRAM 2 1 Power CPU VCORE PENRYN DC&QC Page 80 System Page 3~5 D D Page 81 FSB 1066MHz 1.5VS & 1.05VS LCD Panel Page 82 Page 45 PCIE x16 MXM CRT DDR2 800MHz CANTIGA nVIDIA NB9x Page 46 DDR & VTT DDR2 So-DIMM Page 83 Page 7~9 Page 70 +2.5VS

TAIMAG HD 081 A

Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627
Contextual Info: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 *2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 *2