T290 Search Results

Contextual Info: Central Sem iconductor Corp. C Z T2907A PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R T2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and

T2907A

Contextual Info: T2907 T2907A S 0 T 2 3 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FM M T2907 - 2B FM M T2907A - 2F T2907R - 4P T2907AR - 5P ABSOLUTE MAXIMUM RATINGS SYM BO L PARAMETER C ollector-B ase V oltage C o lle c to r-E m itte r V oltag e

CLR79 T1

Abstract: tansitor arcotronics wet tantalum CLR79A CLR79 Acrotronics Mallory CLR79 CLR81 mallory wet tantalum CLR91
Contextual Info: Wet Tantalum Competitor Cross Reference KEMET T 192 A 256 M 008 A S Lead Material Tantalum Series S - Std. Solder Coated Nickel Failure Rate T190, T290 CLR90 ; T195, T295 (CLR81) T191, T291 (CLR91); T196, T197, T198 T192, T292 (CLR79) A - Not Applicable M - 1%/k Hours

ramp generator 555

Abstract: Bluetooth RSSI circuit diagram
Contextual Info: T2901 Bluetooth Single-chip Transceiver IC Description The T2901 is a bipolar IC manufactured using Atmel Wireless & Microcontrollers’ advanced UHF process. This IC includes a transceiver for the 2.45 GHz ISM band especially for Bluetooth applications. Features

T2900

Contextual Info: Protection Relays Generator Protection–Differential T2900 Series 3-Phase Differential Relay Description The T2900 3-Phase Differential Relay is designed for monitoring current leakage in generators. The T2900 measures the differential current of each of the 3 phases.

Contextual Info: T2901 Bluetooth Single-Chip Transceiver IC Description The T2901 is a bipolar intergrated circuit manufactured using TEMIC Semiconductors’ advanced UHF process. This IC includes a transceiver for the 2.45 GHz ISM band especially for Bluetooth applications.

RXT2907A

Abstract: marking R2F MMST2907A PN2907A SST2907A T106 T110 UMT2907A transistor Marking code t03 Part marking SC70 bc
Contextual Info: Transistors PNP Medium Power Transistor Switching i UM T2907A / T2907A/M M T2907A / T2907A / PN2907A 0 F e a tu re s # E x te rn a l dimensions (Units : mm) 1 ) B V ceo C —4 0 V ( l c = — 10m A ) T2907A 2 ) C o m p le m e n ts the U M T 2 2 2 2 A /S S T 2 2 2 2 A /M M S T 2 2 2 2 A /

T2907A

Abstract: bt2907a MARKING k1p
Contextual Info: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available M M B T2907A Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic

T292 kemet

Abstract: T291D227K075 CLR79 CLR91 kemet capacitor 6R8 uF EIA 0403 capacitor m39006/31 T192B476K050AS T4 0660 T190
Contextual Info: Wet Tantalum Capacitors Commercial and Military Established Reliability MIL-PRF-39006 Style T190 Commercial/T290, CLR90, M39006/30 T191 Commercial/T291, CLR91, M39006/31 T192 Commercial/T292, CLR79, M39006/22 T195 Commercial/T295, CLR81, M39006/25 Including the High-Temperature T197 and T198 Series

Contextual Info: Wet Tantalum T190/T290 Series T190/T290 CLR90 Ratings & Part Number Reference Cap F Case Size Cap Tol. KEMET Part Number 30.0 30.0 30.0 68.0 68.0 68.0 140.0 140.0 140.0 270.0 270.0 270.0 330.0 330.0 330.0 560.0 560.0 560.0 1200.0 1200.0 A A A A A A B B

dual npn 500ma

Abstract: marking k1p MMDT2222A MMDT2907A
Contextual Info: PRELIMINARY MMDT2222A VISHAY /l i t e w ji DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR I POWER SEMICONDUCTOR/ Features • • Epitaxial Planar Die Construction Complementary PNP Type Available M M D T2907A ) Ultra-Small Surface Mount Package • SOT-363

SKT240

Abstract: semikron skt 290 SKT290F12DU f 102 tea 1601 tea 1601 t F08DT SKT240F04DS SKT240F08DT SKT240F10DS
Contextual Info: S1E D fil3bfc.71 QGG3SEÖ 55b « S E K G SEMIKRDN SEMIKRON INC Itrm s m axim um values for continuous operation V drm tq V rrm (Tvj = 125 °C) V US 240 A (88 °C) 400 15 20 SK T240F04D S SKT240 F 0 4 D T SK T 290 F 04 DS S K T290F04D T 800 15 20 SK T240 F 0 8 D S

T2907A

Contextual Info: SOT323 NPN SILICON PLANAR SWITCHING TRANSISTOR ZUMT2222A ISSU E 1 - NOVEMBER 1998_ FEATU RES * Fast sw itch in g P A R T M A R K IN G D E T A IL -T16 CO M PLEM EN TA RY TYP E - ZU M T2907A A B SO LU T E MAXIM UM RATIN G S. PA R A M ETER SYM BO L

T2901

Abstract: ramp generator 555 GFSK 2369 E7 T7024 smc air filter regulator HP-VFQFP-N48
Contextual Info: T2901 Bluetooth Single-Chip Transceiver IC Description The T2901 is an RF-IC intended for Bluetooth applications in the 2.4 GHz to 2.5 GHz ISM band. The HP-VFQFP-N48 packaged IC is a complete transceiver including image rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier,

K1p TRANSISTOR

Abstract: sot-23 Marking k1p MMBT2222A MMBT2907A k1p sot-23 SOT-23 marking r1p SOT23 R1P
Contextual Info: MMBT2222A VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available M M B T2907A Ideal for Medium Power Amplification and Switching SOT-23 -H .h - a TOF? VIEW

Contextual Info: Wet Tantalum General Information T Ordering Information A 256 M 008 A 192 S C SPECIFICATION TANTALUM SERIES when necessary C-0100 (Uninsulated Components) C-0200 (High Shock, High Vibration) T190/T290 MIL-PRF-39006/30 (CLR90) T191/T291 MIL-PRF-39006/31 (CLR91)

T2907A

Abstract: marking AI sot23 JJ SOT23
Contextual Info: TM C e n t r a l Sem i c o n d u c t o r C o r p . C M P T2907A PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R T2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

T2907A

Abstract: cd 100 transistor
Contextual Info: Central C X T2907A TM Sem i c o n d u c t o r C o r p . PNP SILICON TRANSISTOR DESCRIPTION: The C ENTRAL S EM IC O N D U C TO R T2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

Contextual Info: Protection Relays & Controls Generator & Single-Function Protection–Differential T2900 Series 3-Phase Differential Relay Description The T2900 3-Phase Differential Relay is designed for monitoring current leakage in generators. The T2900 measures the differential current of each of the 3 phases.

gauss filter

Abstract: "power amplifier" ramp output capacitor charging Bluetooth RSSI circuit diagram tr. pnp pump 11 smc air filter regulator 1 ghz fm demodulator 1 Mhz fm demodulator AM DEMODULATOR USING PLL characteristics of mixer circuit diagram mcc 95 08101b
Contextual Info: T2901 Bluetooth Single-Chip Transceiver IC Description The T2901 is a bipolar intergrated circuit manufactured using TEMIC Semiconductors’ advanced UHF process. This IC includes a transceiver for the 2.45 GHz ISM band especially for Bluetooth applications.

2222a sot23

Abstract: 2222a bc 2222a FMMT2222A 50s MARKING CODE FMMT2222 FMMT2907 BCV72 BCW29 BFQ31
Contextual Info: FERRANTI semiconductors FMMT2222 FMMT2222A N P N Silicon Planar General Purpose Sw itching Transistors DESCRIPTION These devices are intended fo r use in sm all and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to the FM M T2907 series.

pa 66 gf

Abstract: mixer RHG J FET AM LNA D218 T2901 TQFP48
Contextual Info: Temic T2901 S e m i c o n d u c t o r s Bluetooth Single-Chip Transceiver IC Description The T2901 is a bipolar intergrated circuit manufactured using TEMIC Semiconductors’ advanced UHF process. This IC includes a transceiver for the 2.45 GHz ISM band especially for Bluetooth applications.

lfsn30n17c

Abstract: DIL00 T2901-FYT LFSN30N17 VCO PARA UHF D218 T2901 TQFP48
Contextual Info: Temic T2901 S e m i c o n d u c t o r s Bluetooth Single-Chip Transceiver IC Description The T2901 is a bipolar intergrated circuit manufactured using TEMIC Semiconductors’ advanced UHF process. This IC includes a transceiver for the 2.45 GHz ISM band especially for Bluetooth applications.

CMST2907A

Contextual Info: Central Semiconductor Corp. C M S T2907A SUPER-MINI PNP SILICON TRANSISTOR DESCRIPTION: The C EN TR AL SE M IC O N D U C TO R T2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount