T2907 Search Results

Contextual Info: Central Sem iconductor Corp. C Z T2907A PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R T2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and

T2907A

Contextual Info: T2907 T2907A S 0 T 2 3 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FM M T2907 - 2B FM M T2907A - 2F T2907R - 4P T2907AR - 5P ABSOLUTE MAXIMUM RATINGS SYM BO L PARAMETER C ollector-B ase V oltage C o lle c to r-E m itte r V oltag e

RXT2907A

Abstract: marking R2F MMST2907A PN2907A SST2907A T106 T110 UMT2907A transistor Marking code t03 Part marking SC70 bc
Contextual Info: Transistors PNP Medium Power Transistor Switching i UM T2907A / T2907A/M M T2907A / T2907A / PN2907A 0 F e a tu re s # E x te rn a l dimensions (Units : mm) 1 ) B V ceo C —4 0 V ( l c = — 10m A ) T2907A 2 ) C o m p le m e n ts the U M T 2 2 2 2 A /S S T 2 2 2 2 A /M M S T 2 2 2 2 A /

T2907A

Abstract: bt2907a MARKING k1p
Contextual Info: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available M M B T2907A Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic

dual npn 500ma

Abstract: marking k1p MMDT2222A MMDT2907A
Contextual Info: PRELIMINARY MMDT2222A VISHAY /l i t e w ji DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR I POWER SEMICONDUCTOR/ Features • • Epitaxial Planar Die Construction Complementary PNP Type Available M M D T2907A ) Ultra-Small Surface Mount Package • SOT-363

T2907A

Contextual Info: SOT323 NPN SILICON PLANAR SWITCHING TRANSISTOR ZUMT2222A ISSU E 1 - NOVEMBER 1998_ FEATU RES * Fast sw itch in g P A R T M A R K IN G D E T A IL -T16 CO M PLEM EN TA RY TYP E - ZU M T2907A A B SO LU T E MAXIM UM RATIN G S. PA R A M ETER SYM BO L

K1p TRANSISTOR

Abstract: sot-23 Marking k1p MMBT2222A MMBT2907A k1p sot-23 SOT-23 marking r1p SOT23 R1P
Contextual Info: MMBT2222A VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available M M B T2907A Ideal for Medium Power Amplification and Switching SOT-23 -H .h - a TOF? VIEW

T2907A

Abstract: marking AI sot23 JJ SOT23
Contextual Info: TM C e n t r a l Sem i c o n d u c t o r C o r p . C M P T2907A PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R T2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

T2907A

Abstract: cd 100 transistor
Contextual Info: Central C X T2907A TM Sem i c o n d u c t o r C o r p . PNP SILICON TRANSISTOR DESCRIPTION: The C ENTRAL S EM IC O N D U C TO R T2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

2222a sot23

Abstract: 2222a bc 2222a FMMT2222A 50s MARKING CODE FMMT2222 FMMT2907 BCV72 BCW29 BFQ31
Contextual Info: FERRANTI semiconductors FMMT2222 FMMT2222A N P N Silicon Planar General Purpose Sw itching Transistors DESCRIPTION These devices are intended fo r use in sm all and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to the FM M T2907 series.

CMST2907A

Contextual Info: Central Semiconductor Corp. C M S T2907A SUPER-MINI PNP SILICON TRANSISTOR DESCRIPTION: The C EN TR AL SE M IC O N D U C TO R T2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount

T2907A

Contextual Info: M O TO R O LA Order this document by T2907LT1/D SEMICONDUCTOR TECHNICAL DATA M M B T 2907L T 1 M M B T2907A LT1* General Purpose Transistors PNP Silicon C0LLECT0R * Motorola Preferred Device % 2 EMITTER MAXIMUM RATINGS Rating Symbol 2907 2907A Unit Collector-Emitter Voltage

MMST2907A

Abstract: PN2907A RXT2907A SST2907A T106 UMT2907A rxt2907 TO-126F AGt marking code
Contextual Info: Transistors PNP Medium Power Transistor Switching I UM T2907A / T2907A/M M T2907A / T2907A / PN2907A •F e a tu r e s •E x te r n a l dim ensions (Units : mm) 1) BVceo<—40V ( l c = — 10mA) 2 ) Complements the UMT2222A/SST2222A/MMST2222A/ RXT2222A/PN2222A.

marking bt5

Abstract: MMST2907A PN2907A RXT2907A SST2907A T106 T116 UMT2907A
Contextual Info: Transistors PNP Medium Power Transistor Switching I UM T2907A / T2907A/M M T2907A / T2907A / PN2907A •F e a tu r e s 1 ) BV ceo< —40V ( lc = —10mA) 2 ) Complem ents the UM T2222A/SST2222A/M M ST2222A/ RXT2222A/PN2222A. •E x te r n a l dim ensions (Units : mm)

2N1077

Abstract: A472 G 2N1076 CI2923 2N1074 CK420 2sc196 2sc191 2N1075 2sc113
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

BCW65C

Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A

2SA614

Abstract: 2SA616 2sc113 STC5204
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

BT2222A

Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929
Contextual Info: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.

kn sot23

Abstract: sot-23 Marking KN BSV52 A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR
Contextual Info: * FERRANTI semiconductors BSV52 NPN Silicon Planar High Speed Switching Transistor D E S C R IP TIO N This d evice is in te n d ed s p e c ific a lly fo r use in high speed, lo w c u rre n t s w itc h in g a p p lica tio n s. Encapsulated in th e p o p u la r S O T -2 3 package th ese devices

2N1026

Abstract: 2N1025 2N328A 2N760A 2N2708 2N327A 2N327B 2N328B 2N329A 2N329B
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF

Contextual Info: MOTOROLA Order this document by T2907AWT1/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor T2907AW T1 PNP Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the S O T -3 2 3 /S C -7 0 package

SP126

Contextual Info: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt

cx3804

Abstract: pegatron pegatron A35 A35 pegatron diode c0510 pegatron a24 Cx3808 q8607 IT8752E tpc8118
Contextual Info: 5 4 3 M52V BLOCK DIAGRAM 2 1 Power CPU VCORE PENRYN DC&QC Page 80 System Page 3~5 D D Page 81 FSB 1066MHz 1.5VS & 1.05VS LCD Panel Page 82 Page 45 PCIE x16 MXM CRT DDR2 800MHz CANTIGA nVIDIA NB9x Page 46 DDR & VTT DDR2 So-DIMM Page 83 Page 7~9 Page 70 +2.5VS

TAIMAG HD 081 A

Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627
Contextual Info: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 *2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 *2