T2D 70 DIODE Search Results

T2D DIODE

Abstract: T2D 70 diode T2D 40 DIODE T2D 65 DIODE diode T2D T2d 03 diode T2D 09 diode T2D 75 diode diode t2d 05 T2D DIODE 06
Contextual Info: S IEM EN S BA 389 Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 1 GHz • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 389 yellow Q62702-A732 DO-35 DHD

zener 1B7

Abstract: 125c79 hitachi suffix Hitachi "v suffix" IN5223B 1N5223 1N5226 1N5223A 1N5224 1N5258
Contextual Info: blE D • M4Tb2DS OOIMOSS T2D ■ H I T M HITACHI/ OPTOELECTRONICS Appendix D 500-mW Zener Regulator Diodes 1N5223 through 1N5258 1N5223A through 1N5258A 1N5223B through 1N5258B Table D - l Absolute M axim um Ratings Item Symbol Rating Unit Notes Forward Voltage

T2D 62 diode

Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
Contextual Info: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated

T2D 22 diode

Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Contextual Info: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA

34B SOT

Abstract: NDT455N
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

T2D 24 DIODE

Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

UC1838

Contextual Info: UNITRODE CORP /UN ITRODE IC ^2» D I 'iaMflSl'J QGQ'l'IBS 3 • UNI LINEAR INTEGRATED CIRCUITS 7 ^ r v / '3 V UC1838 UC2838 UC3838 Magnetic Amplifier Controller F EA TU RES • Independent 1% Reference • Two U n com m itted, Identical O perational A m p lifie rs

T2D 96 diode

Abstract: T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D DIODE T2D 36 DIODE T2D 19 diode T2D 53 DIODE T2D DIODE 96
Contextual Info: SbE ]> • 7*^237 Q0MD1S5 [j^DÊKOitLllÊÎ^OKOQigS G y M54HC365/366 M74HC365/366 S C S -T H O M S O N S ISA M S G T H S-THOMSON HEX BUS BUFFER 3-STATE HC365 NON-INVERTING - HC366 INVERTING PRELIMINARY DATA ■ HIGH SPEED tpD = 13 ns (Typ) at V<x = 5V ■ LOW POWER DISSIPATION

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

30PF

Abstract: DS3893A DS3893AV V20A
Contextual Info: DS3893A National Semiconductor DS3893A BTL TURBOTRANSCEIVER General Description The TURBOTRANSCEIVER is designed for use in very high speed bus systems. The bus terminal characteristics of the TURBOTRANSCEIVER are referred to as "Backplane Transceiver Logic” BTL . BTL is a new logic signaling stan­

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

T2D 70 diode

Abstract: T2D DIODE
Contextual Info: /T L inTECHNOLOGY e A ß _ asa AppleTalk Transceiver FCflTUfteS DCSC RIPTIOn • Single Chip Provides Complete LocalTalk®/AppleTalk® Port ■ Low Power: lcc = 1-2mA Typ ■ Shutdown Pin Reduces Icc to 30|iA Typ ■ Drivers Maintain High Impedance in Three-State

T2D 95

Abstract: 74FCT244D T2D 70 diode t2d diodes ML65245 SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541
Contextual Info: June 1996 Application Note 42005 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

T2D 53

Abstract: transistor t2d diode T2D MIPS R4000 74FCT244D T2D 83 diode FCT541 ML65244 ML65245 ML65541
Contextual Info: June 1996 Application Note 42 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In

MP7680JN

Contextual Info: MP7680 5 V CM O S 12-Bit Quad Double-Buffered Multiplying Digita!-to-Analog Converter 2B TEX AR FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs

T2D 24 DIODE

Abstract: T2d 43 diode
Contextual Info: MP7680 5 V C M O S 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter FEATURES BENEFITS • • • • • • • • • • Reduced Board Space; Lower System Cost. • Independent Control of DACs • Excellent DAC-to-DAC Matching and Tracking

T2D 52 diode

Abstract: T2D 00 DIODE T2D 80 diode am/T2D DIODE
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW N» E 722 1 DUAL ISOLATED DC/DC CONVERTER FEATURES APPLICATIONS • DUAL ISOLATED ±5V TO ±16V OUTPUTS • MEDICAL EQUIPMENT • HIGH BREAKDOWN VOLTAGE: 8000V Test • INDUSTRIAL PROCESS CONTROL

T2D 87 diode

Abstract: T2D 49 DIODE Rectifier t2d
Contextual Info: Data Sheet No. PD-9.707A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7130 IRHM8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAO HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs

HP5082-2835

Abstract: MP7680 MP7680JE MP7680JN MP7680KE MP7680KN
Contextual Info: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs

T2D 44 diode

Abstract: T2D DIODE 44 T2D DIODE 42 T2d 03 diode T2D 37 DIODE T2D DIODE 43 T2D 24 DIODE T2D DIODE 32 T2D diode t2d 17 diode
Contextual Info: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs

digi20

Abstract: LM-0355MVWB
Contextual Info: ¡E D Light Emitting D io d e s / L e a d e d ty p e Pin Arrangement Diagram/Internal Circuit Diagram Single Digit LED Numeric Displays • L A 301 B/L series •L A -4 0 1 D/N series Pin Arrangement Diagram Internal Circuit Diagram 9 Pin Arrangement Diagram

8408B

Abstract: 8408a PMI OP 490
Contextual Info: DAC-8408 P M Ï QUAD 8 -BIT MULTIPLYING CMOS D/A CONVERTER WITH MEMORY 1 iW o n o l i t h i c s I FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • • Four DACs in a 28 Pin, 0.6 Inch Wide DIP or 28 Pin JEDEC Plastic Chip Carrier

Contextual Info: OPA336 OPA2336 OPA4336 B U R R -B R O W N 0 [ ] SINGLE-SUPPLY, McroPOWER CMOS OPERATIONAL AMPLIFIERS MieroA mpHfier* Series FEATURES DESCRIPTION • SINGLE SUPPLY OPERATION OPA336 series micropower CMOS operational ampli­ fiers are designed for battery powered applications.