T3123 Search Results

TRANSISTOR SE 135

Contextual Info: AVANTEK INC 5DE D • 0A V A N T E K OODfc^SO □ AT-01610 Up to 4 GHz General PurposeSilicon Bipolar Transistor Avantek 100 mil Package Features • 22.0 dBm typical Pi dB at 2.0 GHz • 9.5 d B typical G i dB at 2.0 G Hz • High Galn-Bandw idth Product: 7.0 GHz typical fr

T2333

Abstract: S2136 S4236 p2561 T7314 T5323 S7136 T1133 T3122 T5122
Contextual Info: m m m m m TRIANGULAR TYPE LED LAMP -•¿mi LENS COLOR TRIANGULAR TYPE Color Diffused TYP 1 3x4.6m/m As sample in P25-44 3x4.6m/m 4.0 ttJO MAX ax, -wo _ 5 174 M AX_ CATHOOi ^^55 . ^ ,3 ^ >| CMHQM moot -I2 W « 2 0.6 1.2 1.4 1.2 2.0 1.2 1.6 T1133 T4133

Contextual Info: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.

Contextual Info: N AMER PHILIPS/DISCRETE OLE D LLS3T31 ooman MAINTENANCE TYPE 4 LAE4000Q for new design use LAE4001R r-i)-a3 M IC R O W A V E LIN EA R PO W ER T R A N S IS T O R NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

2N5109 SGS

Abstract: 2n5109 Max17550 transistor Z2
Contextual Info: 3QE » • 7^2=1237 Q 0 312E5 T ■ ' T i 2 \*Z'2 > r = 7 S G S -T H O M S O N ^ 7 # ^ a œ @ |L i O r a ô [ M D O i 2N5109 Y T ^ s - thom son EPITAXIAL PLANAR NPN C A T V U L T R A -L IN E A R HIGH G AIN T R A N ­ SISTO R The 2N5109 is a multi-emitter silicon planar epitaxial

2N6839

Contextual Info: HEWLETT-PACKARD i CMPNTS 2GE D □ 4447534 0G0SS3S 3 E3 *31 H E W L E T T PACKARD 1:rJl 3 1 -2 -3 T'3 3-Ö S' L inear P ow er Transistors HXTR-3002 Chip Technical Data HXTR-3102, TX and TXV 2N6839 HXTR-3104, TX

BFY55

Abstract: transistor f 421 1F t transistor Silicon Epitaxial Planar Transistor philips
Contextual Info: BFY55 PHILIPS INTERNATIONAL SbE D Bi 711üflSb 00422^2 043 I IPHIN T -3 h 2 3 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-39 metal case with the collector connected to the case. It is primarily intended for use in high frequency and very high frequency oscillators and amplifiers as well as for output stages

transistor bfr96

Abstract: SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor
Contextual Info: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor PHILIPS DESCRIPTION 711DÔ2t> 0 0 4 5 7 7 b Sfc.E D INTERNATIONAL BFR96 lfl7 « P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as

Contextual Info: 3GE D • 7^237 0D31DÔ1 1 ■ rz 7 sgs-thom son ^ 7 # bsyss o « [im i@ T M « § BSY56 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BSY55 and BSY56 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten­ ded for use in high performance amplifier, oscillator

Contextual Info: N AMER PHILIPS/DISCRETE • ObE D ■ bbSBIBl O D m T S B b ■ DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J ■ - _ 11 LTE4002S - -r — - ~ •

1HT251

Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
Contextual Info: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A

transistor f423

Abstract: F423 Philips F423 F423 transistor BF423 philips BF423 BF420 BF421 BF422 F-423
Contextual Info: BF421 _ i V _ P HILI P S I N T E R N A T I O N A L 5bE D • ¿ F423 7 1 1 0 0 2 b 0 0 4 21 b 2 42S « P H I N SILICON EPITAXIAL TRANSISTORS T -J /-2 3 P-N-P transistors in plastic TO-92 envelope primarily intended for class-B video output stages in

PSD3-20

Abstract: PSD5-28
Contextual Info: • ■ ■ Uliw Split Bobbin Power Transformers 115V and 115/230V 50/60Hz T31 and T32 T31 Series:Single 115V Primary T32 SeriesiDual 115/230 V Primary Single Dual Secondary Connections Primary Primary Size Parallel Series P/N P/N VA VAC Arms VAC Arms T31-1-10

MRF5109HX

Abstract: MRF510
Contextual Info: nOTOROLA SC X S TR S /R 4bE F D • b3b72S4 00R 2*î21 5 ■ MOTI» ^ 3 /- « 2 3 MOTOROLA SEMICONDUCTOR I TECHNICAL DATA MRF5109HX,HXV DM0 u/un NPN Silicon High Frequency Transistor Discrete Military Operation . .designed specifically for broadband applications requiring good linearity. Usable as a

HXTR-3102

Abstract: 3104j HXTR-3104 HXTR-3002 3002 ic equivalent 3002 TRANSISTOR equivalent 2N6839 high power transistor s-parameters HXTR-3102TXV Silicon Bipolar Transistor Hewlett-Packard
Contextual Info: HEWLETT-PACKARD i C MP N T S 50E D D 4MM75Ö4 0D0SS3S 3 Q HEW LETT ¿ rJ l P A C K A R D T - 3 1 -3 -3 T ' 3 3 -0 5 - L in ea r P o w e r T ran sistors HXTR-3002 C hip Technical D ata HXTR-3102, TX and TXV

159MHz

Abstract: BFR36
Contextual Info: 3QE » • 7^237 QDaD'îSS 1 ■ £ÿj SGS-THOMSON 'Tv £\-Z2> 0 [F il© [i[L [i© im « l_ B F R 3 6 S G S-THOMSON CATV ULTRA-LINEAR HIGH GAIN TRANSISTOR DESCRIPTION T h e B F R 36 is a multi-emitter silicon planar epitaxial N P N transistor in Jedec T O -3 9 m etal case. It is desi­

bf433

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
Contextual Info: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.

Contextual Info: AVANTEK INC 2DE D avantek • AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • ll'mibb DGQti4S2 H 22.0 dBm typical Pi ¿b at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwldth Product: 7.0 GHz typical

Contextual Info: 4tE J> m t3t?2SM 0 0 ^ 7 1 1 •MOTbT-31 MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 2C5109HV Chip NPN Silicon High-Frequency Transistor m ini Discrete Military Operation . .designed specifically lor broadband applications requiring good linearity. Useable as a

2n5401 toshiba

Contextual Info: 45E T> m TDTTESG GG17773 S TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS TO SH IB A IT0S4 2N5401 (D I S C R E T E / O P T O ) FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : v CBO= - 160V, V c e o = -150V

Contextual Info: jut. • TTSTSB? Q Q 3 1 Q 13 b ■ -2 3 S G S -T H O M S O N ILiCTIEMQtgS S G B F Y 64 S- TH O M SO N HIGH-CURRENT GENERAL PURPOSE TRANSISTOR D ESC RIPTIO N The BFX64 is a silicon planar epitaxial PNP tran­ sistor in Jedec TO-39 metal case. It is designed for

BFG96

Abstract: BFG32 MSB037 3H2 philips MBB352
Contextual Info: Product specification Philips Semiconductors 7 ^ 3 / - Z 3 PNP 5 GHz wideband transistor philips SbE D international BFG32 711Dfi2b D04SD3S ETfl • P H I N PINNING D ESCRIPTION 1 P N P transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in

Contextual Info: 32E D • 02 3b 32G 001bñ43 7 ■ NPN Silicon High-Voltage Transistors SIEM EN S/ SPCL-, SIP BFN16 BFN18 T - 3 Í- 2 3 SEMICONDS . • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage

Contextual Info: 3SE D • Ö23b320 QQ1L7S1 S MKSIP y -2 1 - 3 3 NPN Silicon High Voltage Transistor BF 622 _ SIEMENS/ SPCLi S E M I C O N D S _ • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage