T6N 700 Search Results

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE

MICRON BGA PART MARKING

Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate

MICRON BGA PART MARKING

Abstract: NF 034 T6N 700 MT49H16M18
Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate

MICRON BGA PART MARKING

Abstract: MT49H16M36
Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate

smd code marking x18

Abstract: MT49H16M36
Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate

Contextual Info: 22 ChipInductors-1008HTSeries 2520 T h e s e lo w p ro file in d u c to rs a re 4 0 % th in n e r th a n o u r c o n v e n tio n a l 1 0 0 8 b o d y s iz e s . T h e y fe a tu re s ta n d a rd in d u c ta n c e to le ra n c e s o f 5 -1 0 % , h ig h S R F s a n d v e ry h ig h Q.

Contextual Info: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial

L9D222G72BG3

Contextual Info: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte

AS4DDR232M72PBG

Contextual Info: PRELIMINARY INFORMATION L9D225G80BG5 2.5 Gb, DDR2, 32 M x 80[72] Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 25mm x 25mm – 255PBGA, 1.27mm pitch Differential Data Strobe (DQS, DQSx\) per byte

AGE T6N 600

Abstract: AS4DDR232M72PBG
Contextual Info: PRELIMINARY INFORMATION L9D225G80BG5 2.5 Gb, DDR2, 32 M x 80[72] Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 25mm x 25mm – 255PBGA, 1.27mm pitch Differential Data Strobe (DQS, DQSx\) per byte

FBGA DDR3

Abstract: AS4DDR264M72PBG E-1150 55125C
Contextual Info: PRELIMINARY INFORMATION L9D250G80BG5 5.0 Gb, DDR2, 64 M x 80[72] Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 25mm x 25mm – 255PBGA, 1.27mm pitch Differential Data Strobe (DQS, DQSx\) per byte

Contextual Info: 1Gb: x4, x8, x16 – DDR2 SDRAM Features DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features

Contextual Info: Preliminary‡ 1Gb: x4, x8, x16 – DDR2 SDRAM Features DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2

Contextual Info: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • • Configuration

Contextual Info: 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM SAA128M4. – 32 Meg x 4 x 4 banks SAA64M8. – 16 Meg x 8 x 4 banks SAA32M16. – 8 Meg x 16 x 4 banks For the latest data sheet, please refer to the SpecTek Web site: http://www.spectek.com

Contextual Info: PreLIMINARY Information L9D112G80BG4 1.2 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Laminate Ball Grid array (LBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply

DDR2 x32

Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V

Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V

Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V

84 FBGA outline

Abstract: DDR2 x32 5 pin cmos operational amplifier z X6 BP 109 transistor T6N 700 DDR2 SDRAM Meg x 4 x 9 banks 0-30v power DDR2 SDRAM sstl_18 84 FBGA ccd ck
Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 MT47H32M8 – 8 Meg x 8 x 4 MT47H16M16 – 4 Meg x 16 x 4 For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding -37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V

Contextual Info: 1Gb: x4, x8, x16 – DDR2 SDRAM Features DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features