TAA 521 Search Results

Contextual Info: IBM11S1320LN IBM11S1320LL 1M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tcA C CAS Access Time 15ns 20ns tAA Access Time From Address 30ns 35ns tR C Cycle Time 110ns 130ns

Contextual Info: IB M 11S4 3 2 0 BN IB M 11S4 3 2 0 BL 4M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 W c RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns 35ns tRC Cycle Time

Contextual Info: IB M 1 1 S 4 3 2 0 B P IB M 1 1 S 4 3 2 0 B M 4M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 70 tpAc i RAS Access Time 60ns 70ns tcAC ! CAS Access Time 15ns 20ns tAA \ Access Time From Address 30ns

Contextual Info: L H 521 0 2 8A CMOS 64K x 18 Static RAM FEATURES • Fast Access Times: 15/17/20/25/35 ns • Wide Word 18-Bits for: - Improved Performance - Reduced Component Count - Nine-bit Byte for Parity andSu are also usedtoenable or disable Read and Write operations on the high and the low bytes. The Address

CY7C008

Abstract: CY7C009 CY7C018 CY7C019
Contextual Info: fax id: 5214 51 CY7C008V/009V CY7C018V/019V PRELIMINARY 3.3V 64K/128K x 8/9 Dual-Port Static RAM Features • Fully asynchronous operation • Automatic power-down • Expandable data bus to 16/18 bits or more using Master/Slave chip select when using more than one device

74std

Abstract: aval PKW 1000 bytek TAA 521 versatest 2100 elan digital systems cmos 4000 series FM27040
Contextual Info: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C040 Product: 4 Mbit UV EPROM Organization: Technology: 512K x 8 CMOS Process: Die Size: Passivation: TS55 145.1 X 201.9 mils

m 9835

Abstract: trasistor bytek bytek Programmers 11801 aval PKW 1000 aval pkw 3000 TAA 521 TAA 521 A fairchild reliability report transistor
Contextual Info: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C010 Product: 1 Mbit UV EPROM Organization: Technology: 128k x 8 CMOS Process: Die Size: Passivation: TS55 91.2 x 136.2 mils

CY7C027V

Abstract: CY7C028V CY7C037V CY7C038V IDT70V27
Contextual Info: fax id: 5215 51 CY7C027V/028V CY7C037V/038V PRELIMINARY 3.3V 32K/64K x 16/18 Dual-Port Static RAM Features • Fully asynchronous operation • Automatic power-down • Expandable data bus to 32/36 bits or more using Master/Slave chip select when using more than one device

IC 741 OPAMP

Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Contextual Info: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte

bytek

Abstract: 408-730-5511 FM27C256 AVAL DATA PKW 1000 TAA 521
Contextual Info: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C256 Product : 256K bit UV EPROM Organization: Technology : 32k x 8 CMOS Process : TS-55 Die Size : 100 x 92 mils

42-PIN

Abstract: 44-PIN
Contextual Info: LH53B8500 CMOS 8M 1M x 8 / 512K × 16 Mask-Programmable ROM With Page Mode FEATURES • 1,048,576 words × 8 bit organization (Byte mode) 524,288 words × 16 bit organization (Word mode) PIN CONNECTIONS 42-PIN DIP TOP VIEW A18 1 42 A17 2 41 A8 • Access time: 150 ns (MAX.)

42-PIN

Abstract: 44-PIN
Contextual Info: LH53B8P00A CMOS 8M 1M x 8 / 512K × 16 Mask-Programmable ROM With Page Mode FEATURES • 1,048,576 words × 8 bit organization (Byte mode) 524,288 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) Page mode: 50 ns (MAX.) • Addressable page: 4 words or 8 bytes

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 2 1 8 0 5 1 M-BIT DYNAMIC RAM 128K-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The /iPD421805 is a 131,072 words by 8 bits CMOS dynamic RAM with optional hyper page mode (EDO).

Contextual Info: " H Y li H D ft! « FAST PAGE MODE, X4/X8 DRAM Read Cycle 457 «HYUNDAI Early Write Cycle Note; 9 OE : Don’t cara '9 8 DRAM DATA BOOK tOEH CD ar ai ~o CD C o o LU o o (S' 4> X -J > :> |C0 < !oc ICO < •o ILU Is jo Read-modify-write Cycle Wwe 0 0 0 - 3 ( 7 ) ^ 1 - Hi -Z -O

LH521028

Abstract: LH521028A
Contextual Info: LH521028A ALE 1 52 51 50 49 48 47 46 A14 2 A13 3 G 4 A15 VSS 5 W 6 DQ8 45 DQ7 10 44 DQ6 11 43 VCC DQ11 12 42 VSS DQ12 13 41 DQ5 DQ13 14 40 DQ4 DQ14 15 39 DQ3 DQ2 DQ10 9 VCC VSS 18 36 VCC DQ16 19 35 DQ1 DQ17 34 20 21 22 23 24 25 26 27 28 29 30 31 32 33 DQ0

LH521028U-25

Abstract: LH521028
Contextual Info: LH521028 FEATURES • Fast Access Times: 17/20/25/35 ns • Wide Word 18-Bits for: – Improved Performance – Reduced Component Count – Nine-bit Byte for Parity • Transparent Address Latch • Reduced Loading on Address Bus • Low-Power Stand-by Mode when

LH521028

Abstract: LH521028A 521028-1D
Contextual Info: LH521028A A14 A13 G A15 VSS ALE VCC VSS 9 W DQ10 4 3 2 1 52 51 50 49 48 47 46 DQ8 45 DQ7 10 44 DQ6 11 43 VCC DQ11 12 42 VSS DQ12 13 41 DQ5 DQ13 14 40 DQ4 DQ14 15 39 DQ3 DQ2 VSS 16 38 VCC 17 37 VSS DQ15 18 36 VCC DQ0 A11 DQ1 34 A12 35 20 21 22 23 24 25 26 27 28 29 30 31 32 33

IRP 745

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / < P D 4 2 1 8 0 5 1 M-BIT DYNAMIC RAM 128K-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The //PD 421805 is a 131,072 words by 8 bits CMOS dynamic RAM with optional hyper page mode (EDO).

016v

Contextual Info: fax id: 5212 51 CY7C138V/144V/006V/007V PRELIMINARY CY7C139V/145V/016V/017V 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM Features • Automatic power-down • Expandable data bus to 16/18 bits or more using Master/ Slave chip select when using more than one device

GMM7322000AN

Abstract: GMM7322000ANS
Contextual Info: # LG Semicon Co.,Ltd. Description The G M M 7322000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 4 pieces o f 1M x 16bit DRAMs in 42 pm SOJ package on single sides the printed circuit board with decoupling capacitors. The GM M 7322000ANS/SG is

009V

Abstract: CY7C008 CY7C009 CY7C018 CY7C019
Contextual Info: fax id: 5214 51 CY7C008V/009V CY7C018V/019V PRELIMINARY 3.3V 64K/128K x 8/9 Dual-Port Static RAM Features • Fully asynchronous operation • Automatic power-down • Expandable data bus to 16/18 bits or more using Master/Slave chip select when using more than one device

LH521028

Abstract: xmxxx
Contextual Info: LH521028 CMOS 64K x 18 Static RAM operations on the high and the low bytes. The Address Latches are transparent when ALE is HIGH for applica­ tions not requiring a latch , and are latched when ALE is LOW. The Address Latches and the wide word help to eliminate the need for external Addressbusbuffers and/or

Contextual Info: FUJITSU MICROELECTRONICS 47E D Marchi 990 Edition 2.2 DATA SHEET 3 7 4 ^ 2 OOnSll 1 • FUJITSU MB81C4256-70/-80/-10/-12 CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 x 4 Bits Fast Page Mode DRAM The Fujitsu MB81C4256 is a CMOS, fully decoded dynamic RAM organized as

TAA 521

Contextual Info: June 1991 Edition 4.0 - _ •— FUJITSU 1 DATASHEET M B 8 1 C 4 2 5 6 A - 60/-70/-80/ -10 CMOS 256K X 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 4 Bit Fast Page Mode DRAM 1 The Fujitsu MB81C4256A is a CMOS, fully decoded dynamic RAM organized as 262,144 words x 4