TALON Search Results

2N4044

Abstract: 2N4045 2N4100 2N4878 3N165 3N166 3N188 3N189 3N190 3N191
Contextual Info: 1. DISCRETES Differential Amplifiers — Dual Monolithic P-Channel MOSFETS Enhancement Ordering Information Preferred P irt Number V osi th) min/max V Package BVd s s min/max ta s s max •g s s max V PA PA Vg S 1-2 max r C)S(on) max !) talon) min/max mA

Contextual Info: 403030.04BB 3/11/02 3:45 PM Page 163 Insulated Conductor Connectors Type IPC – Talon Insulation Piercing Connectors AL or CU Conductor Range AWG/mm2 Main Tap Cat. No. IPC1102* IPC4111 IPC4141 IPC5041* IPC3535 IPC3541 2—8 35—6 1/0—6 50—16 4/0—1/0

2N4351

Abstract: 3N161 3N163 3N164 3N170 3N171 3N172 3N173 IT1700 IT1750
Contextual Info: 1. D IS C R E T E S Switches and Amplifiers Offering intormatfM Priftrrtd P in Num b« Package — ^G S lh GS(ofl| Min/max V M O SFET Qls BWq s s lo s s max Ig s s max min r DS (on) max talon) min •o (on) min V pA pA pmho u mA mA max P-Chinm l Enhancamtnt: Gen. u se d w here max isolation between signal source and logic drive required: sw. "O n" resistance varies with signal amplitude.

ZVN3310

Contextual Info: SEMICONDUCTOR DICE MOSFETs - N-CHANNEL b v dss Dice type Min. Max. IDSS at Max. IGSS at ^DS onl Max. at lD V gs Rated V DS VGS=20V Chip Max. at lD geometry at Volts Volts mA ^GSIthl talonl Min. at V DS V Gs Min. Volts S2 A Volts f-A nA A Volts Volts ZVN0540

Contextual Info: SN54HCT652, SN74HCT652 OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS _S C L S 1 7 9 A - MARCH 1 9 6 4 - REVISED JANUARY 1906 • Inputs Are TTL-Voltage Compatible • Independent Registers and Enables for A and B Buses •

sdc 603

Abstract: SDC-602 plcc 52 SOCKET sdc603 MX-500P-21 sdc 606 sdc606 STTC-136 132 qfp extraction tool METCAL SP200
Contextual Info: soldering desoldering & rework systems contents and preface Contents 1 Introducing the QX2 2 QX2 system elements and functions 3 QX2 system elements and functions 4 Part numbers for the QX2 5 The power of SmartHeat 6 The power of SmartHeat 7 MX rework systems

QM6001

Abstract: 6004ST diode jr 702 OM6002ST diode t25 4 L0 lateral mosfet audio amplifier OM6001ST OM6003ST OM6004ST OM6101ST
Contextual Info: OM6001ST OM6003ST OM6101ST OM6103ST OM6002ST OM6004ST QM6102ST OM61Q4ST POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET With Or Without Zener Gate Clamp Protection FEATURES • • • • Isolated Hermetic Metal Package

A 3760 0549

Abstract: 0835 0771 4188 1107
Contextual Info: MIL-C-39014/2 Pin DIP HOW TO O R D E R Military Type Designation: Styles CKR22, CKR23, CKR24 Dash Number Option MIL-C-39014/22 Appropriate Dash Number Part No. Example CKR22 BX K 104 R S tyle. Voltage-Temperature Limits _ Note 1 = Leads centered within ±.005*

B5G1

Abstract: NDC652P Supersot 6
Contextual Info: M arch 1996 National f i Semiconductor" NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • -2.4A, -30V. RDSI0Nl = 0.18 fi @ VGS = -4.5V -10V. >V„ These P-Channel logic level enhancement mode power field effect transistors are produced using

IRF50

Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
Contextual Info: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ds132

Contextual Info: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BST86 FEATURES: PARTMARKING DETAIL - KO ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 180 UNIT V Continuous Drain Current at Ta = 25°C •d 300 mA mA Pulse Drain Current taM

Contextual Info: SM-8 DUAL N-CHANNEL ENHANCEMENT MODE AVALANCHE RATED MOSFET ZDM4206N ISSUE 1 - NOVEMBER n, OO I E ] Qi Di o r m s, d2 I r~ _□ g2 L_L_ I 1 Si PARTMARKING DETAIL - M4206N ABSOLUTE MAXIMUM RATINGS.

k 3525 MOSFET

Abstract: IRFD1ZO irfd1z3
Contextual Info: HE 0 I MâSS4SH 0000300 b | Data Sheet No. PD-9.380G T-35-25 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TO R HEXFET TRANSISTORS IRFD1 ZO IM-CHANNEL HEXDIP IRFD1Z3 1-WÄTT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PAGKAGE 100 Volt, 2.4 Ohm, 1-Watt HEXDIP

DOMOSYS

Abstract: dcw02 transistor f151 failure 00FF EIA-600 X101 X110 F12F PL-III
Contextual Info: CEWay is a family of chips developed by DOMOSYS Corp. to meet the requirements of the residential and commercial local area networks LANs . The CEWay PL-III is the ideal device for mid- to high-end electronic appliances, such as central controllers. It integrates the complete

A74P

Abstract: AWA3 S3H-15 157D CAPACITOR
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 16-/8-Bit Single-Chip Microcomputers Th e jxPD 78P324 is a p ro duct in w h ich th e /zPD 78324's in te rn a l m ask ROM is rep laced by a one-tim e PROM o r EPRO M . T h e one-tim e PROM p ro d u ct, w h ich e n a b le s w ritin g o n ly o nce, is e ffe ctive fo r m u ltip le-d evice

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ b 4 m 2 GG17273 217 «SPIGK N-CHANNEL POWER MOSFETS IRF614/615 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

RF-3073-AT242

Abstract: Voice encryption mobile
Contextual Info: multiband networking radio RF-7800M-MP features >> Software-Defined >> SCA v2.2 >> Mobile ad-hoc networking >> 30 Mhz to 2 GHz Frequency Range >> Higher data rates >> Programmable Crypto The RF-7800M-MP Multiband Networking Radio is a revolutionary CNR-sized radio that

Topaz Semiconductor

Abstract: TO226AA 2n7000 sseb 2N700 52BL
Contextual Info: TOPAZ SEMICONDUCTOR OSE D g TüôSSEb □□□QTflS G | “* SEMICONDUCTOR T-29-25 2N7000 N-CHANNEL ENHANCEMENT-MODE D-MOS POW m FETs ORDERING INFORMATION TO-226AA TO-92 Plastic Package 2N700Û Description 60V, 5 ohm FEATURES APPLICATIONS • High Gate Oxide Breakdown, +40V min.

bl12864j

Abstract: 12864-J BL12864JERNH BL12864 SSD1325 P 12864 12232 572D lcd 12864 12864 graphic display
Contextual Info: SPECIFICATIONS FOR OLED MODULE MODEL NO. BL12864JERNH$ FOR MESSRS: _ ON DATE OF: _ APPROVED BY: _ BOLYMIN, INC. 13F-1, 20, TA-LONG RD., TAICHUNG CITY 403, TAIWAN, R.O.C.

SSD1353

Abstract: GS33 25KHZ GS63 SA159 SC159 STMPE1208S oled ic a636 BL160128
Contextual Info: SPECIFICATIONS FOR LCD MODULE MODEL NO. BL160128BCRNHp$ VER01 OR MESSRS: _ ON DATE OF: _ APPROVED BY: _ BOLYMIN, INC.

ZVNL12

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 200 Volt VDS * R DS on =10£2 * Low threshold APPLICATIONS * Telephone handsets REFER TO ZVNL120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE 200

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -J U L Y 94_ FEATURES * 60 Volt VDS * * Spice model available APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306G IS S U E 3 - O C TO BER 1995_ FE A T U R E S * Very low RDs oni = -33£2 A PPLICA TIO N S * DC - DC Converters * Solenoids/Relay D rivers for Autom otive PARTM ARKIN G D ETA IL -

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.