TB53131 Search Results

transistor N100

Abstract: N100 transistor K 192 A transistor Transistor 5331 BUZ42 N100 T0220AB V103 transistor k 3911
Contextual Info: N AMER P H I L I PS /D I SC RE T E ObE D • tb53131 Power M OS transistor OOIMSOO BU Z42 5 r - 3 7 -\i May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

445 nm DLP

Abstract: NU501 BYV74F M1982 BYV 22 diode
Contextual Info: D E VE LO PM EN T DATA BYV74F SERIES This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. N AMER P H I L I P S / D I S C R E T E 5SE D • bbS3T31 0G25b41 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES

TB531

Contextual Info: 2SE D N AMER P H I L I P S / D I S C R E T E • bbSBTBl 0030335 3 B U K 4 4 5-50 A B U K 445-50B P o w erM O S tra n s is to r G E N E R A L D E S C R IP T IO N N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope. The device is intended fo r use in

Contextual Info: N AMER PHILIPS/DISCRETE HSE D ^ 53^31 DoniB? 4 • BDX66; 66A . BDX66B; 66C T-3S -3I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A,