TC511000BPL Search Results

Contextual Info: PRELIMINARY D ESC R IPTIO N The TC511000BPI/BJL/BZL/BFTL is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BPL/BJL/BZL/BFTL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the

XCR-T

Contextual Info: nccroiD Timi D ESCRIPTIO N PRELIMINARY The T C 51 1 0 0 0 B P L /B JL /B Z L /B F T L is the new generation dynamic RAM organized 1 ,0 4 8 ,5 7 6 words by 1 bit. The T C 5 1 1 0 0 0 B P L /B JL /B Z L /B F T L utilizes TOSHIBA'S CMOS Silicon gate process technology as

TC511000P-10

Abstract: tc511000 Micron TC511001AP MT4C1026-10
Contextual Info: -1M CMOS X Si £ tt « i& m m CO D y n a m i c y ^ 'f TRAC isax ns TRCY rain (ns) TCAD min (ns) TAH nin (ns) TP rain (ns) R A M (1 0 4 8 5 7 6 x 1 ) ft tt TWCY ain (ns) TDH min (ns) TRWC rain (ns) V D D or V C C (V) 18 P I N m % I DD max (mA) A I DD STANDBY