TC5561 Search Results

TOSHIBA J55

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC5561P/J-45, TC5561P/J-55, TC5561P/J-70 [DESCRIPTION] The TC5561P/J is a 65,536 bit high speed static random access memory organized as 65,536 words by 1 bit using CMOS technology, and operated from a single 5-volt supply, Toshiba's high performance device technology provides both high speed and low power

Contextual Info: 65,536 WORD x 1 BIT CMOS STATIC RAM [DESCRIPTION] The TC5561P/J is a 6 5 ,5 3 6 b it high, speed, sta tic random a ccess m em ory organ ized as 6 5 ,5 3 6 w ords by 1 bit u sin g CMOS technology, and op erates from a sin g le 5-volt supply. T oshiba’s h ig h

TC5561P-55

Abstract: TC5561 TC5561J-55
Contextual Info: 65,536 WORD x 1 BIT CMOS STATIC RAM [d e s c r i p t i o n ! The TC5561P/J is a 65,536 bit high speed static random access memory organized as 65,536 words by 1 bit using CMOS technology, and operates from a single 5-volt supply. Toshiba’s high perform ance device technology provides both high speed and low power features w ith a maximum

TA053-059-41-38

Contextual Info: TA053-059-41-38 REV1_20040412 5.3 – 5.9 GHz 8W Amplifier FEATURES • P-1 dB: 39 dBm • Noise Figure: 4.5 dB • IP3: 48 dBm • Bias Condition: 4700 mA @ 12 V • Small Signal Gain: 41 dB DESCRIPTION The TA053-059-41-38 is an 8W power amplifier designed for high linearity applications in the 5.3 to 5.9 GHz

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

5.9 GHz power amplifier

Abstract: TA053-059-22-10
Contextual Info: TA053-059-22-10 REV1_20040412 5.3 – 5.9 GHz Low Noise Amplifier FEATURES • P-1 dB: 10 dBm • Noise Figure: 1 dB • IP3: 20 dBm • Bias Condition: 90 mA @ 12 V • Small Signal Gain: 22 dB DESCRIPTION The TA053-059-22-10 is a low noise amplifier designed for applications in the 5.3 to 5.9 GHz frequency

TA053-059-38-36

Contextual Info: TA053-059-38-36 REV1_20040412 5.3 – 5.9 GHz 4 W Amplifiers FEATURES • P-1 dB: 36 dBm • Noise Figure: 4.5 dB • IP3: 44 dBm • Bias Condition: 2400 mA @ 12 V • Small Signal Gain: 38 dB DESCRIPTION The TA053-059-38-36 is a 4 W power amplifier designed for high linearity applications in the 5.3 to 5.9

UPD4361C-70

Abstract: UPD4361C-55 TMS6287-45 P4C187L-10 P4C187L-12 P4C187L-15 P4C187L-20 P4C187L-25 P4C187L-30 P4C187L-35
Contextual Info: 67 4 K * m. tt ft ft CC TAAC max ns) TCAC max (ns) TOE max (ns) a CMOS 7 f S t a t i c y / íí TOH min (ns) TOD max (ns) RAM ( 6 5 5 3 6 x 1 ) « tt TWP min (ns) T5S min (ns) TDH min (ns) TWD min (ns) TWR max (ns) V!)D or V C C (V) 2 2 P I N m I DD max

TC5561P-55

Abstract: TC5561 TC5561J-45 tc5561j-55 TC5561P-45 A4518 DIN 5901
Contextual Info: 65,536 WORD x 1 BIT CMOS STATIC RAM [DESCRIPTION The TC 5561P/J is a 65,536 b it high, speed s ta tic ran d o m access m em ory o rg an ized as 65,536 w ords by 1 b it u sin g CMOS technology, an d o p erate s from a sin g le 5-volt supply. T o sh ib a’s h ig h

TA053-059-35-33

Contextual Info: TA053-059-35-33 REV1_20040412 5.3 – 5.9 GHz 2W Amplifier FEATURES • P-1 dB: 33 dBm • Noise Figure: 4.5 dB • IP3: 41 dBm • Bias Condition: 1200 mA @ 12 V • Small Signal Gain: 35 dB DESCRIPTION The TA053-059-35-33 is a 2 W power amplifier designed for high linearity applications in the 5.3 to 5.9 GHz