TDIX Search Results

bently nevada 3300 operation manual

Abstract: bently nevada 3500 operation manual bently nevada 3300 manual Bently Nevada 3300 bently nevada 3300 16 manual bently nevada 3500 field wiring Bently Nevada 2201 bently nevada 3300 monitoring system TDXnet bently nevada
Contextual Info: R Specifications and Ordering Information Transient Data Interface External TDIX Description The TDIX Communications Processor provides the interface between compatible (see notes) Bently Nevada machinery protection systems and our on-line machinery management software. It continuously collects both

fram programmer schematic

Abstract: slau101
Contextual Info: MSP430 Gang Programmer MSP-GANG430 User's Guide Literature Number: SLAU101Q March 2003 – Revised November 2011 2 SLAU101Q – March 2003 – Revised November 2011 Submit Documentation Feedback Copyright 2003–2011, Texas Instruments Incorporated Contents

ATT7C116J

Abstract: ATT7C116
Contextual Info: i =ATS.T ’^ ^ » M ic r o e le c tr o n ic s Data Sheet March 1992 ATT7C116 High-Speed CMOS SRAM 16 Kbit 2K x 8 , Common I/O Features • High speed — 10 ns maximum access time ■ Plug-compatible with IDT6116 and CY7C128/CY6116 ■ Automatic powerdown during long cycles

Contextual Info: MAY 8 1992 Data Sheet March 1992 i =AT&T Microelectronics ATT7C185 High-Speed CMOS SRAM 64 Kbits 8K x 8 Common I/O, Output Enable Features • Highspeed — 10 ns maximum access time ■ Plug-compatible with IDT7164 and CY7C185/186 ■ Automatic powerdown during long cycles

Bently Nevada 3300

Abstract: Bently Nevada 2201 bently nevada 3300 monitoring system 3300 bently Bently Nevada 3500 Bently Nevada TDXNET Bently Nevada 3500 series DDIX Bently 3500
Contextual Info: R Specifications and Ordering Information Serial Data Interface External Dynamic Data Interface External SDIX/DDIX Description The SDIX/DDIX Communications Processor provides the interface between compatible (see notes) Bently Nevada machinery protection systems and our

STA111

Abstract: TDIX AN-1259 AN-1312 SCANSTA111 SCANSTA112 STA112 AN1312
Contextual Info: ெࡔࡔॆӷ‫༹ڞ‬ ᆌᆩጀ๥ 1312 2004౎6ሆ āāॽ‫߲ܠ‬ഗॲ૶‫ڟ‬ᅃ߲STA111ईኁSTA112Ԩ‫ں‬෢௮ āāྺକኟඓ‫֡ں‬ፕSTA111/112LjՂႷሞTCKB‫ڦ‬ᅃ߲ ‫܋‬੨ LSP ้Ljሞ้Ⴞ‫ݴ‬ဆ೺क़ՂႷ੊୯‫ڟ‬٪ሞᇑԨ‫ں‬෢

732 LEM

Abstract: lem 718 T7352
Contextual Info: Data Sheet January 1994 % A H s .T ^ ^ ^ M ic ro e le c tro n ic s T7351B FDDI/T7352 TPDDI Physical Layer Devices Features Description • Single-chip FDDI physical layer PHY solution TheT7351B FDDI/T7352 TPDDI Physical Layer Devices are single VLSI components that implement

Contextual Info: fpATfcT Advance Data Sheet ATT7C186 High-Speed CMOS SRAM 64 Kbit 8K x 8 Flash Clear Features • 8K by 8-bit static RAM with high-speed flash clear ■ Automatic powerdown during long cycles ■ Advanced CMOS technology ■ High-speed read-access time — to 12 ns

Contextual Info: Data Sheet March 1992 l ^ AT&T Microelectronics ATT7C167 High-Speed CMOS SRAM 16 Kbits 16K x 1 , Separate I/O Features • High speed — 10 ns maximum access time ■ Plug-compatible with IDT6167 and CY7C167 ■ Automatic powerdown during long cycles ■ Low-power operation

relay lad1

Abstract: lad1 relay CNT17 OVF20 2451B LA01 sia to sms ATT1S04 LS259 54-057
Contextual Info: Data Sheet September 1995 m ic r o e le c t r o n ic s group Lucent Technologies Bell Labs Innovations Features • A highly integrated four-repeater architecture will sim­ plify the design of a wide range of N-port by M-segment circuit-switched hubs. The ATT1RX04

T195F

Abstract: 25CC W101 aeg diode
Contextual Info: _ 0029426 A E G 81C 0 5 8 6 8 CORP G CORP E a i D E j a o s ci 4 a b T ~&5 ~ D □ o D S flb fl 7 l ^ j - j g s p Typenreihe/Type ran ge_ T 1 9 5 F _ 200*_ 400*_ 600_ 800_ 1000_ 1100_ 1200_ 1300*

MA1022

Contextual Info: October 2003 AS7C331MPFS18A 1M x 18 pipelined burst synchronous SRAM Features • Organization: 1,048,576 x18 bits • Fast clock speeds to 166MHz in LVTTL/LVCMOS • Fast clock to data access: 3.4/3.8 ns • Fast OE access time: 3.4/3.8 ns • Fully synchronous register-to-register operation

Contextual Info: August 2002 Advance Information AS7C33512PFS32A AS7C33512PFS36A 3.3V 512K x 32/36 pipelined burst synchronous SRAM Features • • • • • • • • • • • • • • • • • • Organization: 524,288 words × 32 or 36 bits Fast clock speeds to 250MHz in LVTTL/LVCMOS

Contextual Info: May 2003 Advance Information AS7C33512NTD32A AS7C33512NTD36A Š 9 . î  65$0 ZLWK 17'TM Features • Organization: 524,288 words x 32 or 36 bits • NTD 1 architecture for efficient bus operation • Fast clock speeds to 200 MHz in LVTTL/LVCMOS

MAGNETIC HEAD read amplifier

Contextual Info: January 1990 Edition 1.0 DATA SHEET MB 4114A MAGNETIC DISK HEAD AMPLIFIER 4-ch MAGNETIC DISK THIN-FILM HEAD AMPLIFIER FOR HDD The Fujitsu MB4114A is a monolithic bipolar integrated circuit optimized for high performance application to disk head system. The MB4114A is 4-channel Read & Write Amplifier for thin film head of HDD.

A8299

Contextual Info: A8299 Dual LNB Supply and Control Voltage Regulator Features and Benefits Description ▪ Integrated boost MOSFET, current sensing, and compensation ▪ Stable with low-profile ceramic boost capacitors ▪ Adjustable LNB output current limit from 250 to 950 mA

Contextual Info: Data Sheet January 1992 Ü ^ A T & T Microelectronics ATT7C197 High-Speed CMOS SRAM 256 Kbit 256K x 1 , Separate I/O Features Low-power operation — Active: 210 mW typical at 45 ns — Standby: 500 nW typical • High speed— 12 ns maximum access times

Bently Nevada 2201

Abstract: TDXnet Bently Nevada 3300 modbus Bently Nevada 3300 bently nevada 3500 field wiring 138131-AXXX bently nevada communication gateway bently nevada 3300 monitoring system Bently Nevada 3500 RJ45 15 Pin
Contextual Info: R Specifications and Ordering Information TDXnet Description The TDXnet Communications Processor provides the interface between compatible see note Bently Nevada machinery protection systems and our on-line machinery management software. It continuously collects both

lad1 relay

Abstract: relay lad1 CNT17 1rx04 CIT relay
Contextual Info: Data Sheet September 1995 m ic r o e le c t r o n ic s group Lucent Technologies Bell Labs Innovations ATT1RX04 FORESPAR Four Managed Ethernet Repeaters Features • On-chip counters and registers support comprehen­ sive network management capabilities. This allows

ATT7C199P-15

Contextual Info: Hw 25 mz Datasheet February 1992 ATT7C199 = ^A T & T Microelectronics High-Speed CMOS SRAM, 256 Kbit 32K x 8 , Common I/O, Output Enable Features High speed — 12 ns maximum access times Plug-compatible with IDT71256 and CY7C198/199 Automatic powerdown during long cycles

AOI21

Abstract: OAI22 32X72 equivalent to TRANSISTOR BC 187 ao21 AN1521 low noise transistor bc 179 OMPAC wirebond die flag lead frame using NAND gate construct an inverter
Contextual Info: Order this Data Sheet by H4CP/D MOTOROLA SEMICONDUCTOR H4CPlus SERIES TECHNICAL DATA Product Data Sheet H4CPlus SERIES CMOS ARRAYS The new H4CPlus Series arrays feature new 3.3V, 5V and mixed-voltage capability, high-speed interfaces, and analog PLLs for chip-to-chip clock skew

AS7C331MNTD18A

Abstract: AS7C331MPFS18A AS7C33512NTD36A
Contextual Info: March 2003 Advance Information AS7C331MPFS18A 1M x 18 pipelined burst synchronous SRAM Features • • • • • • • • • • • • • • Organization: 1,048,576 x18 bits Fast clock speeds to 200MHz in LVTTL/LVCMOS Fast clock to data access: 3/3.4/3.8 ns

t7351

Abstract: DD231 T7352 T7351B-FC
Contextual Info: Data Sheet January 1994 microelectronics group Lucent Technologies Bell Labs innovations T7351B/T7352 FDDI/TPDDI Physical Layer Devices Features Description • Single-chip FDDI physical layer PHY solution The T7351B FDDI/T7352 TPDDI Physical Layer Devices are single VLSI components that implement

7C197

Contextual Info: Data Sheet February 1992 , H &t Microelectronics ATT7C197 High-Speed CMOS SRAM 256 Kbit 256K x 1 , Separate I/O a t Features • High speed — 12 ns maximum access times ■ Plug-compatible with IDT71257 and CY7C197 ■ Automatic powerdown during long cycles