TEMIC JFET Search Results

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

vcr7n

Abstract: J270 jfets SST271
Contextual Info: Temic Semiconductors SOT23 T092 2 lead T092 (3 lead) JFETs - N-Channel Voltage-Controlled Resistors Breakdown VQIUlgg Ä f rr-" >;•; )(V) v Min Max Min Max Max ipA) Package VCR2N 20 60 -3.5 -7 -5000 TO206AA VCR4N 200 600 -3.5 -7 -200 T0206AA VCR7N 4000

TRANSISTOR B737

Abstract: MD80C31 smd TRANSISTOR code marking 8K 67202FV PGA300 5962-8506401MQA ERC32SIM marking code RAD SMD Transistor npn ISO DIMENSIONAL certificate formats 67205E
Contextual Info: Integrated Circuits for Aerospace and Defense Short Form 1998 16 June 1998 Publisher: TEMIC Semiconductors La Chantrerie BP 70602 44306 Nantes Cedex 03 FRANCE Fax: +33 2 40 18 19 60 E:mail nantes.marcom@temic.fr World Wide Web: http://www.temic.de 16 June 1998

Contextual Info: Temic 2N5114JAN/JANTX/JANTXV Series Siliconix P-Channel JFETs 2N5114JAN/JANTX/JANTXV 2N5115JAN/JANTX/JANTXV 2N 5116JAN/JANTX/JANTXV Product Summary P a rt N um ber v GS otf (V) 2N5114 2N5115 2N5116 toN M ax (ns) r DS(on) M a x (£2) iD(ofl) Typ (pA) 5 to 10

TRIVER

Abstract: JM38510/11108BEA
Contextual Info: Temic DG189/190/191 S e m i c o n d u c t o r s High-Speed Drivers with Dual SPDT JFET Switches Features Benefits • Constant On-Resistance Over Entire Analog Range • Low Leakage • Low Crosstalk • Rad Hardness Applications • • • • • Low Distortion

u101b

Abstract: G182AA
Contextual Info: Temic DG180/181/182 S e m i c o n d u c t o r s High-Speed Drivers with Dual SPST JFET Switches Features Benefits Applications • Constant On-Resistance Over Entire Analog Range • Low Leakage • Low Crosstalk • Rad Hardness • • • • • • •

Contextual Info: Temic DG186/187/188 S e m i c o n d u c t o r s High-Speed Drivers with SPDT JFET Switches Features Benefits Applications • Constant On-P-esistance Over Entire Analog Range • Low Leakage • Low Crosstalk • Rad Hardness • • • • • • • •

SD5400CY

Contextual Info: Temic S e m i c o n d u c t o r s # SOT23 40 <0^ T092 2 lead T092 (3 lead) T018 (2 lead) T018 (3 lead) DIP16 <0 S014 JFETs - P-Channel JFET Analog Switches Patt Number Breakdown Voltage Min (mA) VS T » Mis Max Min if*) Max 8h(mS> Typ 11 j 1 T yp typ Max

6Af amplifier

Abstract: SST4119 SST4118
Contextual Info: Temic 2N/PN/SST4117A Series S e m i c o n d u c t o r s N-Channel JFETs 2N4117A PN4117A 2N4118A PN4118A 2N4119A PN4119A SST4117 SST4118 SST4119 Product Summary P a rt N um ber VGS0»ff> V V(BR)GSS M in (V ) gfs M in (m S ) ÏDSS M in ( n A ) 4117 -0.6 t o -1.8

TEMIC 2N3819

Abstract: 2N3819 equivalent 2n3819 equivalent ic 2n3819
Contextual Info: Temic 2N3819 S e m i c o n d u c t o r s N-Channel JFET Product Summary V cS off ( V ) V (B R )G S S M i n (V ) < -8 gfs Min (mS) IDSS Min(mA) 2 -25 2 Features Benefits Applications • Excellent High-Frequency Gain: Gps It dB @ 400 MHz • Very Low Noise: 3 dB @ 400 M Hz

SI marking code

Abstract: j271 J270 marking code SS SOT23 si marking
Contextual Info: Temic J/SST270 Series S e m i c o n d u c t o r s P-Channel JFETs J270 J271 SST270 SST271 Product Summary Part Number V GS off (V) V(BR)GSS M>n (V) gfs Min (mS) J/SST270 0.5 to 2.0 30 6 -2 J/SST271 1.5 to 4.5 30 8 -6 lo ss Min (mA) Applications Features Benefits

SST5484

Contextual Info: Temic 2N/SST5484 Series S e m i c o n d u c t o r s N-Channel JFETs 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 Product Summary Part Number V c s w o tV V BR)GSS M i n ( V ) 2N/SST5484 -0 .3 to - 3 -2 5 3 1 2N /SST5485 -0 .5 to - 4 -2 5 3.5 4 2N /SST5486

Contextual Info: Tem ic S e m i c o n d u c t o r s TEMIC Semiconductors Discrete Components Division The TEM IC Semiconductors Discrete Components Division com bines TE M IC ’s expertise in power, IR data transm ission, optoelectronic, analog signal processing, and bipolar technologies in a way that

RF Transistors

Abstract: tv rf section temic Tv tuner temic mosfet
Contextual Info: Tem ic S e m i c o n d u c t o r s Transistors Whether you need RF, bipolar, power, or lowpower transistors, TEMIC Semiconductors has a device for your application that’s backed with a long tradition of technological innovation. Applications Our RF transistors include devices for tuner pre­

741J

Contextual Info: Temic J/SST/U308 Series S e m i c o n d u c t o r s N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary Part Number V G S ioff V ) J3 0 8 - I t o - 6 .5 V (B R )G S S M in (V ) g ft Min (mS) -2 5 8 Id ss M in (m A ) 12 J309 —1 t o —4

G401A

Abstract: 401DJ 403-AK 403DJ
Contextual Info: Temic DG401/403/405 S e m i c o n d u c t o r s Low-Power, High-Speed CMOS Analog Switches Features Benefits Applications • • • • • • • • • • • • • • • • 44-V Supply Max Rating ± 15-V Analog Signal Range On-Resistance— ros on : 20 Q

p1086

Abstract: p1087 "P-Channel JFETs" P1087 equivalent
Contextual Info: Temic P1086/1087 S e m i c o n d u c t o r s P-Channel JFETs Product Summary P a rt N um ber V GS o f f M a x ( V ) rj>s(on) M a x ( Q ) ÏJXofT) T y p ( p A ) Io n T y p ( n s ) P1086 10 75 -1 0 25 P1087 5 150 -1 0 30 Features Low On-Resistance: P1086 <75 Q

1SS SOT-23

Abstract: SST5484
Contextual Info: Tem ic J304/305 S e m i c o n d u c t o r s N-Channel JFETs Product Summary Part Number V BR G S s M i n ( V ) gb Min (mS) lo ss Min (mA) J304 -2 to -6 -30 4.5 5 J305 -0.5 to -3 -30 3 1 VGS(off) (V) Features Benefits Applications • Excellent High Frequency Gain: J304,

2N3819 equivalent

Abstract: TEMIC 2N3819 transistor 2N3819 2N3819 2n4416 jfet Siliconix JFET Siliconix N-Channel JFET equivalent for 2N3819 2N4416 Siliconix Siliconix
Contextual Info: 2N3819 Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS MIN (V) gfs MIN (MS) IDSS MIN (MA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion

DMILL

Abstract: RAD HARD TRENCH TRANSISTOR BPSG HEP transistors hep silicon diode 1E14 temic jfet jfet n channel ultra low noise nuclear Neutron Radiation Detector
Contextual Info: 10MRAD Si DMILL Mixed Analog/Digital Radiation Hard BiCMOS An emerging need in HEP MPW The decision to develop new equipment for High Energy Physics (HEP) research has led the need for ultra rad hard technology. The radiation tolerance for detector electronics adjacent to proton collision

j108 EQUIVALENT

Abstract: sst108
Contextual Info: Tem ic J/SST108 Series S e m i c o n d u c t o r s N-Channel JFETs J108 J109 J110 SST108 SST109 SST110 Product Summary Part Number VGS off (V) rDS(on) Max (Q) iu(off) iy p (pA ) t o s Typ J/SSTI08 - 3 to -10 8 20 J/SST109 - 2 to -6 12 20 4 J/S5TU 0 -0.5 to -A

ic 11105 circuits diagraM

Abstract: JM38510/11105BIA DG186AP
Contextual Info: Siüconix DG186/187/188 A M e m b e r o f th e TBM 1C G t o up High-Speed Drivers with SPDT JFET Switches Features Benefits Applications • C onstant O n-R esistance O ver E ntire A nalog R ange • Low L eakage • Low C rosstalk • R ad H ardness • •

U290

Abstract: u291
Contextual Info: U290/291 Semiconductors N-Channel JFETs Product Summary Typ ruscon M a x Q ) ÏD(ofD TH» (i*A) U290 - 4 to -10 3 0.01 14 U291 -1.5 to -4.5 7 0.01 14 Vg sm o CV) tON (ns) Features Benefits Applications • • • • • • • • • • • • •

DG129

Contextual Info: DG129 Siliconix AM ember of the-TeMlc Group Dual DPST JFET Analog Switch Features Benefits Applications • • • • • • M inim izes Standby Power Requirem ents • Better Radiation Tolerance • L ess Distortion • Higher Frequency Switching • Sm ooth Closed L oop Response