U291 Search Results

Contextual Info: 㲓 ⪏ⳅ㦐⧧㨡 SII集团的环境经营 ⪏ⳅ⤸⹻㝛㺨 ⿖㓧⤖⿼ ᮡᮡ㵀ⲽ⤀♋㽳㱸㦎⤇㙶㔣⒌☨⼸☠㥲ᱨ㮾⡘ 㵖 ⪏ ⳅ ☨⛏㖼 ᮡᮡSII㺤⻲㲂⵺㷝⿖ 㓧⤖⿼⫆⛑ᱨ⭊⤖⿼㖫ⓥ⼗ⶌ⿑␤㊹☨ SII⯿᮰⿖㓧⤀㩠ᮤ⿖㓧␤㊹ᮤ⿖㓧㔶⫆᮱☨㑻⿖㓧㾗㢜⫑〉⹻

to-206ac

Abstract: NVA2CHP U290
Contextual Info: NVA N-Channel JFETs fT-Sificonix in c o rp o ra te d DEVICE TYPE PACKAGE Single TO-92 TO-226AA • J105, J106, J107 Single TO-52 (TO-206AC) • U290, U291 Single Chip • Available as NVA1CHP, NVA2CHP, NVA3CHP TYPICAL CHARACTERISTICS On-Reslstance & Drain Current

U290

Abstract: u291
Contextual Info: U290/291 Semiconductors N-Channel JFETs Product Summary Typ ruscon M a x Q ) ÏD(ofD TH» (i*A) U290 - 4 to -10 3 0.01 14 U291 -1.5 to -4.5 7 0.01 14 Vg sm o CV) tON (ns) Features Benefits Applications • • • • • • • • • • • • •

U290

Contextual Info: B 65 9 -9 7 U290, U291 N -C H A N N E L SILICO N JU N CTIO N FIELD-EFFECT TRANSISTO R • CHOPPERS • LOWON RESISTANCE SWITCHES Absolute maximum ratings at Ta = 25°C Rsverse Gate Source & Reverse Gats Drain Voltage Continuous Forward Gate Current — 30 V

Contextual Info: [2] [2] ⸃ 1. ⸃ ⺑ ⺑ CCD ߣߪ CCD charge coupled device ߪ 1970 ᐕߦ☨࿖ߩࡌ࡞㔚⹤⎇ⓥᚲߩ Boyle ࠄߦࠃߞߡ⊒᣿ߐࠇߚඨዉ૕ ᯏ⢻⚛ሶߢߔ‫ޕ‬ ၮᧄ⊛ߥ᭴ㅧߪ࿑ 1.1ߦ␜ߒߚࠃ߁ߦ‫ޔ‬ඨዉ૕ၮ᧼⴫㕙ߩ⛘✼⤑ߩ਄ߦ㔚ᭂࠍߟߌߚ MOS ኈ㊂ߢߔ‫ޕ‬

U290

Abstract: U290-1 U291 j105-7 jfet to 92
Contextual Info: . Performance Curves NVA See Section 5 • Analog Switches U291 designed for . H Siliconix U290 n-channel JFETs B EN EFITS ■ Commutators • Ultra-Low Insertion Loss ■ Choppers • High Off-lsolation RDS on <2-5i2(U290) 'D (o ff) < 1 nA ABSOLUTE M A X IM U M R A TIN G S (25°C)

U291

Abstract: B65 transistor U290
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-65 B-65 01/99 U290, U291 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Low On Resistance Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

U290

Contextual Info: U290/291 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) U290 −4.0 to −10 3 10 14 U291 −1.5 to −4.5 7 10 14 FEATURES D D D D D Low On-Resistance: U290 < 3 W Fast Switching—tON: 14 ns

u290

Contextual Info: T e m ic N-Channel JFETs Ü290/291 Product Summary Part Number U290 U291 Vg S{oB V) -4 to -10 -1.5 to -4.5 Features • • • • • Low On-Resistance: U290 <3 Q Fast Switching—îqn : 14 ns

Contextual Info: 㔣⒌㺤╭ 通过创造新价值，为社会做贡献 “创造时光运用时光、丰富时光” ⳟ⏥⪹㱸㢦⹂㔣⪹☨➑㑗⧧㋵㮟☨Ⓘ㩦➂㷝ᮣSII㾗㢜㔣⪹⒱ 力求与环境相和谐 ⹻ㅴ㲓⤇㙶㨼㦣 㴗㺐㮥ᱨ㮔Ⓦ➶㑍㖰㸆㨗㦆㽔ᱨ⏌㢜⤕㻠Ⓘ㩦➂㷝☨㔣⪹ᱨ☇

U290

Abstract: U291
Contextual Info: . Perform ance Curves N V A See Section 5 • Analog Switches U291 designed for . H Siliconix U290 n-channel JFETs B EN EFITS ■ Commutators • Ultra-Low Insertion Loss ■ Choppers • High Off-lsolation RDS on <2-5i2(U 290) 'D (o ff) < 1 nA ABSOLUTE M A X IM U M R A TIN G S (25°C)

U290

Abstract: U291
Contextual Info: U290/291 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (nA) tON Typ (ns) U290 –4 to –10 3 0.01 14 U291 –1.5 to –4.5 7 0.01 14 Features Benefits Applications D D D D D D D D D D D D D D D Low On-Resistance: U290 <3 W

U290

Abstract: U291 u2903
Contextual Info: U290/291 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) U290 −4.0 to −10 3 10 14 U291 −1.5 to −4.5 7 10 14 FEATURES D D D D D Low On-Resistance: U290 < 3 W Fast Switching—tON: 14 ns

U290

Contextual Info: U290/291 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (nA) tON Typ (ns) U290 –4 to –10 3 0.01 14 U291 –1.5 to –4.5 7 0.01 14 Features Benefits Applications D D D D D D D D D D D D D D D Low On-Resistance: U290 <3 W

U290

Abstract: U291 P-37405
Contextual Info: U290/291 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (nA) tON Typ (ns) U290 -4 to -10 3 0.01 14 U291 -1.5 to -4.5 7 0.01 14 Features Benefits Applications D D D D D D D D D D D D D D D Low OnĆResistance: U290 <3 W

U290

Abstract: Siliconix JFET U291
Contextual Info: U290/291 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) U290 −4.0 to −10 3 10 14 U291 −1.5 to −4.5 7 10 14 FEATURES D D D D D Low On-Resistance: U290 < 3 W Fast Switching—tON: 14 ns

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N4303

Abstract: sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302
Contextual Info: si6halFET Product Specifications 7-io N & P-Channel Single JFETs Siliconix N N N P P P 8.0 6.0 11.5 6.5 3.2 5.0 5.0 9.5. 20 20 40 40 40 30 30 30 _ - _ _ _ _ _ _ _ 45 45 - _ _ - _ 0.9 2.0 0.2 0.44 1.0 2.0 5.0 1.0 2.0 0.5 0.1 3.0 I5.0 15.0 _ 25 75 150 _ 90 60

diode T25-4

Abstract: IC AN214 N345 pioneer amplifier an214 XCV1600E ac3 amplifier circuit diagram AN214 amplifier horizontal driver transistor D155 K235 XCV300E-6PQ240C
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.2 November 9, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)

TI_BQ24721C_QFN_32P

Abstract: D5036 tps51620 PowerPAD20 AM4825P tps51125 R1019 FM ic GMT_G680LT1_SOT23_5P pt10s TPS51620RHAR
Contextual Info: INVENTEC PRELIMINARY TEST 07A99 2007 12 20 Pre-MP BUILD INVENTEC TITLE 07A99 Preliminary Test SIZE CODE A3 CHANGE by KOBE 23-Jan-2008 DOC. NUMBER REV X01 CS SHEET 1 OF 63 TABLE OF CONTENTS PAGE 1.COVER PAGE 2.INDEX 3.BLOCK DIAGRAM 4.POWER SEQUENCE BLOCK 5-12.SYSTEM POWER

E112 FET

Abstract: E112 N-Channel FET SILICONIX E112 2SK582 2SK518J MMBF4861 KE4093 TO226AA MMBF4860 InterFET
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g. Max loss Max (V) (A) VOS(off) Min (S) Max Clas Max (F) PD Max (W) Derate at (WrC) Toper Max eC) Package Style N-Channel JFETs, (Co nt' d) 5 10 15 20 2SK582 UG251 KE4861 MMBF4861 PN4861

GSR 10,8

Abstract: DLL5 BG432 ic 404 BB112 equivalent
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.0 April 2, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 Kb to 4 Mb system gates - 130 MHz internal performance (four LUT levels)

AF125

Abstract: n345 pioneer amplifier an214 diode t25 4 d9 DIODE T25-4 AY102 AF155 AN214 amplifier horizontal driver transistor D155 IC AN214
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.3 July 17, 2002 Production Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)

FMG G20

Abstract: neptune make M9 power analyzer USER MANUAL PI7C7300 circuit diagram laptop motherboard F1A4 oasis pdf on ic 7442 details 272-PIN M66EN AD-29B
Contextual Info: PI7C7300 3-PORT PCI-to-PCI BRIDGE REVISION 1.05 2380 BERING DRIVE, SAN JOSE, CA 95131 TELEPHONE: 1-877-PERICOM 1-877-737-4266 FAX: 408-435-1100 EMAIL: SOLUTIONS@PERICOM.COM INTERNET: HTTP://WWW.PERICOM.COM PI7C7300 3-PORT PCI-to-PCI BRIDGE Advanced Information