TF 298 Search Results

PFC design

Contextual Info: Reference Design for IPM Modules Evaluation Board for P95X-A45 TF IPM Modules roprietary data, company confidential. All rights reserved. Reference Design for IPM Modules RD_2015-06_001-v02 page 1 Table of Contents 1 Introduction . 4

Contextual Info: MG200Q1US41 U nit in mm HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • • • • High Input Impedance High Speed : tf=0.5//s M ax. : trr = 0.5//s(Max.) Low Saturation Voltage : VçE(sat) =4.0V (Max.) Enhancement-Mode The Electrodes are Isolated from Case.

2sc4596

Contextual Info: 2SC4596 Transistor, NPN Features Dimensions Units : mm • available in T0-220FP (SC-67) package • high speed switching: tf < 1.0 jas at lc = 0.3 A 2SC4596 (TO-22QFP) 7.0 • low collector saturation voltage, typically V CE(sa« < 0.3 V at lc/lB = 3 A/0.15 A

2SC5103

Abstract: 2SC5103F5
Contextual Info: 2SC5103F5 h 7 > s 7 > $ / Transistors 2S C 5103F5 NPN b 7 > V *$ Epitaxial Planar NPN Silicon Transistor "J y^/High Switching Speed • ^ "iS @ /D im en sio n s U nit: mm • # * tf=0.1 us (Typ.) (lc=3A ) 2) VcE(sat)=.0.15V (Typ.) (IC/lB=3A/0.15A) 3) SOA

OKI g3 gs lead free

Contextual Info: 31E P COP888CF NATL S E M I C O N D CUP/UCJ b S O l l S Ö 0 0 b ? 7 0 ci 1 National PRELIMINARY Semiconductor T - tf- tfo Z COP888CF Single-Chip microCMOS Microcontroller i Two 16-bit timers, each with two 16-bit registers sup­ porting: — Processor Independent PWM mode

Contextual Info: ♦HY UNDAI HYM532256A Series SEMICONDUCTOR 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/tF decoupling capacitor is mounted for each DRAM.

BCR16DM-12

Abstract: BCR16DM BCR16DM-8 BCR16CM BCR16CM-10 BCR16CM-12 BCR16CM-4 BCR16CM-6 BCR16CM-8 BCR16DM-10
Contextual Info: 184 — — = C tf'7 3 > • •/ f £#■'#] 10, 1 2 ? 7 x c i S & t £ T O * - M , K ttiil it ifl'J I drm Vtm t BCR16CM-4 BCR16CM-6 BCR16CM-8 BCR16CM-10 BCR16CM-12 Vdsm 300 400 600 700 800 Vdrm 200 300 400 500 600 16 i r<-=ioo°c, Afflisi ¿S ì» In rm s)

FSM30C6

Abstract: FSM30C FSM30c2 FSM30C4 H-17 H-18
Contextual Info: - 174 - a FSM30C oT0-3fiJl^-77v o77XhyfktWik 07= 7- y 3>-f y7'fëiE OÜLtS^Ä File No. E809771 •*5Ë*S ¡¿ FSM30C2 ($7—V-2.PÆ , AC1500V I'/m T„=25°C' RMS avi Igm di/dl T, Tsig 200 30(Tf=63°C) 275(50Hz, 300(/=2~10m s) 10 0.5 10 3 20[Vd— %V’drm)

Contextual Info: HITACHI/ MCU/MPU 4 4 cîtaSQl4 0 0 2 3 4 0 4 SbE 0 S • T-H-tf-öV H8/330 HD6473308, HD6433308 HARDWARE MANUAL #H04 H I T A C H ' S I " M21T005 HITACHI/ (MCU/nPU) 2bE Q ■ 4 41 ta2D 4 G Q 2 3 4 D S 7 ■ T-49-19-06 When using this document, keep the following in mind:

EVK75-050

Abstract: EVG31-050 EVK31-050 TAE 1102 2DI300A-050 H-17 H-18 H17133
Contextual Info: 246 — I — N P N , iq g m v s m o Z Ë Î. S V ebo c > « > VcBO m ^ I CP (A (A ) AC, 15m > B I f (A ) (A ) T , tf Pc (a i) (W ) Total (W ) V i., (i£ 2 ) CC) CC) (V ) CBO (m A ) ft * Œ 3. # fcUtèVcio m ft EBO V cB (V ) (m A ) Ä (ic Ä m A ) ft

2SC5103

Contextual Info: 2SC5103F5 b y > v7> £ /Transistors I 2 S C 5 1 3 F 5 7 h - f \ s - N P N V U □ > h 7> Epitaxial Planar NPN Silicon Transistor ¡ Ü *f v f -> ?"/High Switching Speed £t- \f'&0/Dinriensions Unit : mm 1)x-r 7 tf=0.1 MS (Typ.) (lc= 3 A ) 2) □ U '7 i î ê â f a S Œ * i ® l ' „

NT 101

Abstract: 1N3064 1N916 AM29825 SN74ALS29825 SN74ALS29826
Contextual Info: Tf SN74ALS29825. SN74ALS29826 8 BIT BUS INTERFACE FLIP FLOPS WITH 3-STATE OUTPUTS D 2 8 2 9 , J A N U A R Y 1 9 8 6 - REVISED M A R C H 1 9 8 8 • S N 7 4 A L S 2 9 8 2 5 . . . DW OR NT PACKAGE Functionally Equivalent to A M D A M 2 9 8 2 5 and A M 2 9 8 2 6

H-17

Abstract: H-18 H-19
Contextual Info: - 1 2 7 - m H I I 9 2 A TO -9 2 DTAI o m h ty W ä , 1A TO-92 n S ltttttt ( Tu—25°C) itti sii 7? DTA1C DTA1E 200 400 h i RMS) l 2’ t V 1.0 ( Tf=74°C) 8 (50Hz, ¡TSM 1 P gm 1 (/S50Hz, d u ty á l0 % ) V gm 6 I gt Min fr II -40-125 1.5 V 2 2 IV 2 Vb =12V

2DI75S-050A

Abstract: EVM31-050 EVL31-050 ic LM 356 EVL31-055 equivalent EVM31-050A 2DI200A-020 EVK71-050 EVK71-055 EVL31-055
Contextual Info: 240 - h =, N P N . y - 'j > h > • 7 y -U > h > tm , 2 W rt3P • Ü W im ñ w . y - í í - » m i S « * » ! » ! O lili: C tfê W ü tE T SU D 1 ~ ~ °C lJ j t FR_ x E tü I RBE2 I O E2 SUD v i: 9 ft V CBO m i VCEO (SUS) VEBO X 1c z 2 D I 7 5 S - 0

BB105

Abstract: BB105A bb105g WARIKAP diody SOD-23 PD2824 ce37 ma373 BB105A/B
Contextual Info: WARIKAP ¥ BB105A, BB105G SWW 1156-151 D iody k rz em o w e e p ip la n a rn e o z m ien n ej pojem n o sci p rz ez n ac zo n e do p ra c y w u k la d z ie glow icy U H F w o d b io rn ik a c h tele w iz y jn y c h i rad io w y ch . 1 3 tf m a x 0,5 max2,5

Contextual Info: WIRE-WRAP WIRES TYPE AET, WET, WE xxxx SPC or SPCA -90°C / +200°C SPECIFICATIONS Conductor : ASTM-B-224 Insulation : ASTM-D-4895 Insulated wire : NF-C-93522 PTFE 250 / 350 / 600 Volts AC ASTM-B-298 ASTM-B-624 MIL-W-16878 PRIMARY WIRE Standard colours See page III

tf 298

Abstract: E6327 Q67000-S200
Contextual Info: SIPMOS Small-Signal Transistor BSP 298 ● VDS 400 V ● ID 0.5 A ● RDS on 3.0 Ω ● N channel ● Enhancement mode ● Avalanche rated Type Ordering Code Tape and Reel Information BSP 298 Q67000-S200 Pin Configuration E6327: 1000 pcs/reel 1 2 3 4

HD74HC1GU04

Abstract: Hitachi DSA00160
Contextual Info: HD74HC1GU04 Unbuffered Inverter ADE-205-298A Z 2nd. Edition December 1999 Description The HD74HC1GU04 is high speed CMOS unbuffered inverter using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS–TTL series.

Hitachi DSA0076

Abstract: HD74HC1GU04
Contextual Info: HD74HC1GU04 Unbuffered Inverter ADE-205-298B Z 3rd. Edition April 2001 Description The HD74HC1GU04 is high speed CMOS unbuffered inverter using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS–TTL series.

HD74HC1GU04

Abstract: HD74HC1GU04CME
Contextual Info: HD74HC1GU04 Unbuffered Inverter REJ03D0190–0500Z Previous ADE-205-298C (Z Rev.5.00 Jan.27.2004 Description The HD74HC1GU04 is high-speed CMOS unbuffered inverter using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS–TTL series.

Contextual Info: r DO NOT SCALE K « "29843S3 *J| >« Ï T H I S D R A W IN G f A N D 'D E S IG N & S T IT U T E 5 A‘ P R O P R I E T A R Y vD> S .P A C K A R D IE L E C T R .IC 'D I V IS IO N ' TO B E D U P L IC A T E D ’ O R R E P R O D U C E D O U T A U T H O R IT Y O F P A C K A R D E L E C T R I C - * »

6ba1

Abstract: ba8u
Contextual Info: SN54ALS29863, SN54ALS29864 SN74ALS29863, SN74ALS29864 9-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS PRODUCT PREVIEW D2915, JANUARY 1986 • Functionally Equivalent to A M 29863 and A M 29864 • Choice of True or Inverting Logic • Power-Up High-lmpedance State

display led 7 seg

Abstract: HCT138 KS0066 LS138 704-02 214-3301 214-3424 214-3430 214-3468 214-3474
Contextual Info: Data Pack F Issued July 1998 298-4607 Powertip alphanumeric dot matrix liquid crystal displays Data Sheet Reflective types - RS stock numbers 214-3238, 214-3244, 214-3250, 214-3266, 214-3272, 214-3288, 214-3294, 214-3301, 214-3317, 214-3323, 214-3339, 214-3345, 214-3351, 294-8667, 294-8689,

UPS sinus circuit

Abstract: sine wave ups design SEMiX503GB126HDS 80C327
Contextual Info: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 431 A Tc = 80°C 298 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules