THE MOSFET Search Results

501N04

Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05
Contextual Info: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device

Contextual Info: RT9727A N-MOSFET Load Switch Controller General Description Features The RT9727A is a load switch controller to control the external N-MOSFET load switch. The input voltage range of the RT9727A is from 6V to 25V. The RT9727A adopts the constant power discharge method to discharge the

Contextual Info: AN356 Application Note CS1501 & CS1601: DRIVING THE ZCD PIN FROM THE MOSFET DRAIN 1. Introduction The CS1601 is designed with ZCD zero-current detection , providing the controller with the capability to turn on the MOSFET when the current through the boost inductor is close to zero. This can also be described as valley/zero crossings switching. This

"RF MOSFETs"

Abstract: "vlsi technology" abstract for n channel depletion MOSFET depletion p mosfet RF MOSFETs AN1226 mosfet for different channel length AN1228 n mosfet depletion mosfet p-type
Contextual Info: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the

"RF MOSFETs"

Abstract: n mosfet depletion depletion p mosfet "vlsi technology" abstract for N CHANNEL DEPLETION MOSFET p channel depletion mosfet RF MOSFETs "vlsi technology" abstract AN1226 n mosfet depletion note
Contextual Info: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the

nichicon vR

Abstract: NICHICON VR SERIES BX Series nichicon United Chemi-Con SME series 1N4148 A3935 SLF7045 SLF7045T nichicon pf SERIES capacitor BT nichicon
Contextual Info: Component Selection for the Boost Converter Used in the A3935 By Peter Tod This application note provides information to assist in the selection of components for designs using the Allegro MicroSystems A3935 three-phase MOSFET controller. In the first section, the general operation of the boost converter is

mosfet short circuit protection schematic diagram

Contextual Info: ZXMS6004EV1 USER GUIDE Description The ZXMS6004EV1 board Figure 1 is intended for the evaluation of the ZXMS6004FF self protected low side MOSFET. The evaluation board enables the user to evaluate the over-temperature, overcurrent and over-voltage (active clamp)

mosfet 4914

Abstract: wiring diagram for ge cr2943na102a MOSFET 818 ln PWM dc speed control of DC motor using IRF540 5BPB56HAA100 KC1000
Contextual Info: General Description Features The MIC5010 is the full-featured member of the Micrel MIC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The MIC5010 is

RCD snubber

Abstract: snubber circuit for mosfet RCD snubber mosfet design AN-4147 flyback snubber snubber capacitor for low frequency flyback switching snubber design flyback snubber design FSDM311 RCD snubber design
Contextual Info: www.fairchildsemi.com Application Note AN-4147 Design Guidelines for RCD Snubber of Flyback Converters Abstract This article presents some design guidelines for the RCD snubber of flyback converters. When the MOSFET turns off, a high-voltage spike occurs on the drain pin because of a resonance between the leakage inductor Llk of the main transformer and the output capacitor (COSS) of the MOSFET. The

AN-41

Abstract: Power Integrations diode B25 NB b6 smd transistor b17 zener diode ALG B7 smd transistor transistor smd po3 transistor smd ALG pks606 PX 1N4007
Contextual Info: Application Note AN-41 PeakSwitch Design Guide modulated jitter to reduce EMI. In addition, the ICs have integrated functions that provide system-level protection. The auto-restart function limits the dissipation in the MOSFET, the transformer and the output diode during overload, output shortcircuit and open-loop conditions, while the auto-recovering

Contextual Info: LX9610 10A, 20V, Synchronous Power Module TM P RELIMINARY D ATASHEET DESCRIPTION The unit can be enabled or shut down through the COMP/EN pin. Over current sensing is accomplished by measuring the voltage across the Rds-on of the low-side MOSFET. Current of the OCP pin of the IC

11FB-14

Contextual Info: LX9610 10A, 20V, Synchronous Power Module TM P RELIMINARY D ATASHEET DESCRIPTION The unit can be enabled or shut down through the COMP/EN pin. Over current sensing is accomplished by measuring the voltage across the Rds-on of the low-side MOSFET. Current of the OCP pin of the IC

high power rf 10kW

Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02
Contextual Info: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order

100 amp 1000 volt GTO

Abstract: AN-7501 CA3280 vertical JFET p channel depletion mosfet 2N4036 AN75 CA3240E RFM10N15 RFM10N15L
Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note Pageode Useutines DRAIN CURRENT ID (A) VG = 9(4.5)V The reduction in gate drive voltage is the result of halving the thickness of the gate insulator from the industry standard

siemens igbt chip

Abstract: Semiconductor Group igbt break resistor in igbt bup 314 siemens igbt application note
Contextual Info: IGBT Insulated Gate Bipolar Transistor 1 Differences Between MOSFET and IGBT 1.1 Structure The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only difference lies in the additional

EQUIVALENT fds4435

Abstract: MOSFET TSSOP-8 dual n-channel ssot-6 FDS4435 FDS6679Z MOSFET TSSOP-8 common-drain fds4435 mosfet FDS9435A/SO-8 FDW2501NZ
Contextual Info: Handset Batteries May 2003 One of the key components in the battery pack protection circuit is the MOSFET switch. The current handling capability, number of cells used, and environmental constraints greatly determine the specifications for this switch. Options for ESD protection devices integrated with the

accu charger

Abstract: LM3641
Contextual Info: Semiconductor tß L ith ium -Ion B a ttery P ack P rotection Circuit The IC also monitors the bi-directional current tlow in the bat1ery pack by measuring the voltage across a robust 4 m il current sensing resistor internal to the protection IC pack­ age. The IC 1urns OFF the MOSFET pair whenever any tault

Contextual Info: MIC5012 Dual Power MOSFET Predriver SEMICONDUCTOR THE INTELLIGENT POWER COMPANY PRELIMINARY INFORMATION General Description Features The MIC5012 is the dual member of the Micrel MIC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in

AMG-Q05DM06AV

Abstract: JESD625-A 1378P AMGQ05DM06AV frankfurt
Contextual Info: AMG-Q05DM06AV N/P-MOS H-BRIDGE 1. Functional Description of the AMG-Q05DM06AV The AMG-Q05DM06AV is built by utilizing one of the latest state-of-the-art trench technologies to achieve ultra low resistance RDS on for the power MOSFETs. The complementary Hbridge consists of 2 PMOS/NMOS transistor pairs. Based on this trench-technology the input

POWER MOSFET APPLICATION NOTE

Abstract: RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet
Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note VG = 9 4.5 V VG = 5(2.5)V 6 4 VG = 4(2)V 2 The apparent conclusion from a study of the switching waveforms of the new device that halving the gate oxide thickness would double the gate capacitance and halve the switching

MIC5011AJ

Contextual Info: General Description Features The M IC 5011 is the “minimum parts count" member of the Micrel MIC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The 8-pin

RFP70N06

Abstract: AN9322 AVALANCHE TRANSISTOR
Contextual Info: Harris Semiconductor No. AN9322.1 Harris Power MOSFET January 1996 A Combined Single Pulse and Repetitive UIS Rating System Author: Wallace D. Williams the +25oC line, the application is beyond the UIS rating of the device and the user stands a risk of device failure. If the

I1N4001

Abstract: mosfet power hf 1kw HF 2N 24V 30A irf540 mosfet control motor 24v PED relay cross reference IC5010 ic5012 EM- 546 motor PED relay 24V 1000-4T
Contextual Info: G eneral Description Features The M IC5010 is the full-featured m em ber of the Micrel M IC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The M IC5010 is

Contextual Info: SPICE Device Model SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the