THETA JA OF 64-PIN BGA Search Results

Contextual Info: W764M32V-XSBX Not Recommended for New Designs — Replaced by W764M32V1-XBX 64Mx32 NOR Flash Multi-Chip Package 3.0V Page Mode Flash Memory  Hardware features FEATURES  Single power supply operation • Advanced Sector Protection • WP#/ACC input accelerates programming time when

nokia 1600 schematic diagram

Abstract: TUNDRA Tsi568 Tundra Tsi568a Alcatel fcbga theta jc FCBGA 10GIL TSI568 005 tx1 nortel
Contextual Info: Title Tsi568A Serial RapidIO Switch Hardware Manual Formal April 2007 80B8000_MA002_04 Trademarks TUNDRA is a registered trademark of Tundra Semiconductor Corporation Canada, U.S., and U.K. . TUNDRA, the Tundra logo, Tsi568A, and Silicon Behind the Network, are trademarks of Tundra Semiconductor

WEDPN16M64V-XBX

Contextual Info: White Electronic Designs WEDPN16M64V-XBX 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a

Contextual Info: White Electronic Designs WED3C7410E16M-XBX RISC Microprocessor Multichip Package The WED3C7410E16M-XBX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace,

WEDPN8M64VR-XBX

Contextual Info: WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a

7410 frequency divider

Abstract: 7410E WED3C7410E16M-XBX WED3C750A8M-200BX WED3C7558M-XBX
Contextual Info: White Electronic Designs WED3C7410E16M-XBX RISC Microprocessor Multichip Package The WED3C7410E16M-XBX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace,

16MX64

Abstract: WEDPN16M64VR-XBX
Contextual Info: WEDPN16M64VR-XBX 16MX64 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performace of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM

WEDPN4M64V-XBX

Contextual Info: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s

nokia 1600 schematic diagram

Abstract: TSI564 TUNDRA Tsi568
Contextual Info: Titl Tsi564A Serial RapidIO Switch Hardware Manual Formal May 2007 80B802A_MA002_04 Trademarks TUNDRA is a registered trademark of Tundra Semiconductor Corporation Canada, U.S., and U.K. . TUNDRA, the Tundra logo, Tsi564A, and Silicon Behind the Network, are trademarks of Tundra Semiconductor

WEDPN4M64V-XBX

Contextual Info: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a

W332M64V-XSBX

Contextual Info: White Electronic Designs W332M64V-XSBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 13 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing

WEDPN16M64V-XBX

Abstract: WEDPN8M64V-XBX
Contextual Info: WEDPN8M64V-XBX 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125, 133*MHz ■ Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing

Contextual Info: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a

W332M64V-XBX

Abstract: WEDPN16M64V-XBX WEDPN4M64V-XBX WEDPN8M64V-XBX
Contextual Info: White Electronic Designs W332M64V-XBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing

Contextual Info: White Electronic Designs W332M64V-XSBX ADVANCED* 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 208 Plastic Ball Grid Array PBGA , 13 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing

Contextual Info: White Electronic Designs WEDPN4M64V-XBX FINAL* 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a

Contextual Info: W332M72V-XBX White Electronic Designs 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a

tundra srio switch

Abstract: BGA PACKAGE thermal profile chn 037 tsi576
Contextual Info: Title Tsi576 Serial RapidIO Switch Hardware Manual Preliminary October 2007 80B804A_MA002_01 Trademarks TUNDRA is a registered trademark of Tundra Semiconductor Corporation Canada, U.S., and U.K. . TUNDRA, the Tundra logo, Tsi576, and Silicon Behind the Network, are trademarks of Tundra Semiconductor Corporation.

XRT83VSH38

Abstract: XRT83VSH38IB
Contextual Info: XRT83VSH38 8-CHANNEL T1/E1/J1 SHORT-HAUL LINE INTERFACE UNIT MARCH 2007 REV. 1.0.7 GENERAL DESCRIPTION The XRT83VSH38 is a fully integrated 8-channel short-haul line interface unit LIU that operates from a 1.8V and a 3.3V power supply. Using internal termination, the LIU provides one bill of materials to

prbs pattern generator

Contextual Info: XRT83VSH38 8-CHANNEL T1/E1/J1 SHORT-HAUL LINE INTERFACE UNIT AUGUST 2007 REV. 1.0.8 GENERAL DESCRIPTION The XRT83VSH38 is a fully integrated 8-channel short-haul line interface unit LIU that operates from a 1.8V and a 3.3V power supply. Using internal termination, the LIU provides one bill of materials to

Contextual Info: XRT83VSH38 8-CHANNEL T1/E1/J1 SHORT-HAUL LINE INTERFACE UNIT SEPTEMBER 2007 REV. 1.0.9 GENERAL DESCRIPTION The XRT83VSH38 is a fully integrated 8-channel short-haul line interface unit LIU that operates from a 1.8V and a 3.3V power supply. Using internal

Contextual Info: WEDPN8M72V-XBX White Electronic Designs * D 8Mx72 Synchronous DRAM* FEATURES n n n n n n n n n n n GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive

WEDPN8M72V-XB2X

Contextual Info: White Electronic Designs WEDPN8M72V-XB2X 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Single 3.3V ± 0.3V power supply Fully Synchronous; all signals registered on positive

W332M72V-XSBX

Contextual Info: White Electronic Designs W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing