Contextual Info: ¿57 SGS-THOMSON Rf¡lD E[3 i[LiOT[3(s iD(Ei 2N5883/2N5885 2N5884/2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS . 2N5884, 2N5885 AND 2N5886 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N5885 and 2N5886 are silicon epitaxial-base NPN power transistor in Jedec

Contextual Info: 5 7 . SGS-THOMSON AM80912-030 m RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

Contextual Info: rs 7 SGS-THOMSON ^ 7 / M g[li]mi TO[M(gg_ SD8250 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE . LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING

ic 7475

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transistor j304

Abstract: thomson microwave transistor
Contextual Info: S G S— THOMSON OSC D | 7 = ^ 2 3 ? OüGQlt.0 7 | ~ 0 T ~ ? 3 ' ûj SOLID STATE MICROWAVE SD1012-3 RF 2128 THOMSON-CSF COMPONENTS CORPORATiON Montgomeryville, P A 18936 • ¡215) 362-8500 ■ TWX 510-661-7299 6 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION

Contextual Info: SGS-THOMSON sUICT»M SS TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2903

Abstract: TSD2902 25x2mA
Contextual Info: SGS-THOMSON sUICT»M SS TSD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: SGS-THOMSON S i. M iM TSD2922 iy RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: SGS-THOMSON ittJÈTMDigl MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . oo:1 VSWR CAPABILITY i LOW THERMAL RESISTANCE . INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE

Contextual Info: SGS-THOMSON TSD2903 m RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to

Contextual Info: SGS-THOMSON A T /. [¡¡» ilLlM M nigt_ MSC81400M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . > . . . REFRACT0RYV30LD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE

TSD2921

Contextual Info: rz T SGS-THOMSON ^ 7# HD »iLECÊ¥ Q !D(gI TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

LI 20 AB

Abstract: TSD2904 SGS 7301 M113
Contextual Info: r=7 SGS-THOMSON TSD2904 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

RF power transistors cross reference

Abstract: SD1470 M176 SD2903 uhf transistors
Contextual Info: SILICON POWER TRANSISTORS VHF/UHF TRANSISTORS Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications. Hi-rel screening and qualification testing is available as on all SGS-THOMSON Microelectronics RF &

Contextual Info: rz 7 SGS-THOMSON ^>7# s T S D 2921 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCTDEVELOPMENTDATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to

Contextual Info: fiST SCS-THOMSON ^ 7 / . »»EILllgTOW Bgg_ AM81720-012 RF & MICROWAVE TRANSISTORS COMMUNICATIONS APPLICATIONS • i ■ ■ ■ ■ > REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGIZED VSWR oo:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING

Contextual Info: rZ J SGS-THOMSON ^ 7 / [«»[lUglgTOMntgl_MSC81002 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . EMITTER BALLASTED . VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC ST RIP AC PACKAGE . Pout = 2.0 W MIN. WITH 10 dB GAIN @

SK9610

Abstract: SK9605 SK9606 SK9604 T-038 T-068 SK9611 SK9618 THOMSON 58E SK9603
Contextual Info: THOMSON/ DISTRIBUTOR BIPOLAR TRANSISTORS SflE D • T05ba?3 0004041 3flQ ■ TCSK . goni Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Materia! Application complementary device type SK9603 NPN/Si HF RF Power Amp:lndust./Comm./Amateur Device

Contextual Info: /= 7 SGS-THOMSON * 7 # . IMígia@HlL[l TO@iDigl_ AM82731-025 RF & MICROWAVE TRANSISTORS _ _ S-BAND RADAR APPLICATIONS I LOW PARASITIC, DOUBLE LEVEL MET­ AL DESIGN » REFRACTORY/GOLD METALLIZATION . EM ITTER SITE BALLASTED •

Contextual Info: / T T SGS-THOMSON ^ 7#• noM & E gM K S STM901-30 RF POWER MODULE LINEAR BASE STATION APPLICATIONS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: C 7 SGS-THOMSON * 7 # . noæ iLl©Tf*Ri]0 gl MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . > • ■ . > REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE

Contextual Info: SCS-THOMSON AM0608-020 !H [ RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS PRELIM INARY DATA . REFRACTORY/GOLD METALLIZATION • INTERNAL INPUT MATCHING ■ METAL/CERAMIC HERMETIC PACKAGE • P out = 20 W MIN. WITH 9.0 dB GAIN PIN CONNECTION DESCRIPTION

TRANSISTOR 5DW

Contextual Info: SGS-THOMSON IU A M 0 9 1 2 -3 0 0 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . • . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAUCERAMIC HERMETIC PACKAGE