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    THOMSON RF TRANSISTOR Search Results

    THOMSON RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    THOMSON RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SD2904

    Abstract: SD2921 SD2922 SD4013 M113 SD2900 SD2902 SD2903
    Text: SILICON POWER TRANSISTORS VHF/UHF TRANSISTORS Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications. Hi-rel screening and qualification testing is available as on all SGS-THOMSON Microelectronics RF &


    Original     		PDF SD2900 SD2902 SD2903 SD4013 SD1470 SD1463 AM80610-030 SD2904 SD2921 SD2922 SD4013 M113 SD2900 SD2902 SD2903

    RF power transistors cross reference

    Abstract: SD1470 M176 SD2903 uhf transistors
    Text: SILICON POWER TRANSISTORS VHF/UHF TRANSISTORS Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications. Hi-rel screening and qualification testing is available as on all SGS-THOMSON Microelectronics RF &


    Original     		PDF SD2900 SD2902 SD2903 SD2904 SD2921 SD2922 SD4013 SD1470 SD1463 AM80610-030 RF power transistors cross reference M176 uhf transistors

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON Rf¡lD E[3 i[LiOT[3(s iD(Ei 2N5883/2N5885 2N5884/2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS . 2N5884, 2N5885 AND 2N5886 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N5885 and 2N5886 are silicon epitaxial-base NPN power transistor in Jedec


    OCR Scan     		PDF 2N5883/2N5885 2N5884/2N5886 2N5884, 2N5885 2N5886 2N5885 2N5886 2N5883 2N5884 2N5883/2N5884/2N5885/2N5886

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . SGS-THOMSON AM80912-030 m RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF AM80912-030 AM80912-030 J133102E 00bS043

    Untitled

    Abstract: No abstract text available
    Text: rs 7 SGS-THOMSON ^ 7 / M g[li]mi TO[M(gg_ SD8250 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE . LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING


    OCR Scan     		PDF SD8250 STAN250A SD8250 7T2T237

    ic 7475

    Abstract: No abstract text available
    Text: {Z ^ T SGS-THOMSON # . « @ [iL [iC T s M @ Ì_ S D 8 2 5 0 RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS 7 • REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE


    OCR Scan     		PDF SD8250 ic 7475

    transistor j304

    Abstract: thomson microwave transistor
    Text: S G S— THOMSON OSC D | 7 = ^ 2 3 ? OüGQlt.0 7 | ~ 0 T ~ ? 3 ' ûj SOLID STATE MICROWAVE SD1012-3 RF 2128 THOMSON-CSF COMPONENTS CORPORATiON Montgomeryville, P A 18936 • ¡215) 362-8500 ■ TWX 510-661-7299 6 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION


    OCR Scan     		PDF SD1012-3 SD1012-3 18awg. /07-3B transistor j304 thomson microwave transistor

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON sUICT»M SS TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


    OCR Scan     		PDF TSD2922 TSD2922

    TSD2903

    Abstract: TSD2902 25x2mA
    Text: SGS-THOMSON sUICT»M SS TSD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


    OCR Scan     		PDF TSD2902 TSD2902 TSD2903 25x2mA

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON S i. M iM TSD2922 iy RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


    OCR Scan     		PDF TSD2922 TSD2922

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ittJÈTMDigl MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . oo:1 VSWR CAPABILITY i LOW THERMAL RESISTANCE . INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF MSC81035MP 81035MP MSC81035MP MSC1035MP.

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON TSD2903 m RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to


    OCR Scan     		PDF TSD2903 TSD2903

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON A T /. [¡¡» ilLlM M nigt_ MSC81400M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . > . . . REFRACT0RYV30LD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF MSC81400M REFRACT0RYV30LD MSC81400M

    TSD2921

    Abstract: No abstract text available
    Text: rz T SGS-THOMSON ^ 7# HD »iLECÊ¥ Q !D(gI TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to


    OCR Scan     		PDF TSD2921 TSD2921

    LI 20 AB

    Abstract: TSD2904 SGS 7301 M113
    Text: r=7 SGS-THOMSON TSD2904 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


    OCR Scan     		PDF TSD2904 TSD2904 LI 20 AB SGS 7301 M113

    Untitled

    Abstract: No abstract text available
    Text: rz 7 SGS-THOMSON ^>7# s T S D 2921 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCTDEVELOPMENTDATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to


    OCR Scan     		PDF TSD2921

    Untitled

    Abstract: No abstract text available
    Text: fiST SCS-THOMSON ^ 7 / . »»EILllgTOW Bgg_ AM81720-012 RF & MICROWAVE TRANSISTORS COMMUNICATIONS APPLICATIONS • i ■ ■ ■ ■ > REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGIZED VSWR oo:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING


    OCR Scan     		PDF AM81720-012 AM81720-012 00h507fl J133102E

    Untitled

    Abstract: No abstract text available
    Text: rZ J SGS-THOMSON ^ 7 / [«»[lUglgTOMntgl_MSC81002 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . EMITTER BALLASTED . VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC ST RIP AC PACKAGE . Pout = 2.0 W MIN. WITH 10 dB GAIN @


    OCR Scan     		PDF MSC81002 MSC810 MSC81002 C127317

    SK9610

    Abstract: SK9605 SK9606 SK9604 T-038 T-068 SK9611 SK9618 THOMSON 58E SK9603
    Text: THOMSON/ DISTRIBUTOR BIPOLAR TRANSISTORS SflE D • T05ba?3 0004041 3flQ ■ TCSK . goni Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Materia! Application complementary device type SK9603 NPN/Si HF RF Power Amp:lndust./Comm./Amateur Device


    OCR Scan     		PDF T05ba SK9603 SK9604 SK9605 SK9606 SK9607 SK9608 SK9609 SK9610 T-038 T-068 SK9611 SK9618 THOMSON 58E

    Untitled

    Abstract: No abstract text available
    Text: /= 7 SGS-THOMSON * 7 # . IMígia@HlL[l TO@iDigl_ AM82731-025 RF & MICROWAVE TRANSISTORS _ _ S-BAND RADAR APPLICATIONS I LOW PARASITIC, DOUBLE LEVEL MET­ AL DESIGN » REFRACTORY/GOLD METALLIZATION . EM ITTER SITE BALLASTED •


    OCR Scan     		PDF AM82731-025 AM82731

    Untitled

    Abstract: No abstract text available
    Text: / T T SGS-THOMSON ^ 7#• noM & E gM K S STM901-30 RF POWER MODULE LINEAR BASE STATION APPLICATIONS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


    OCR Scan     		PDF STM901-30 STM901

    Untitled

    Abstract: No abstract text available
    Text: C 7 SGS-THOMSON * 7 # . noæ iLl©Tf*Ri]0 gl MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . > • ■ . > REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF MSC81450M MSC81450M

    Untitled

    Abstract: No abstract text available
    Text: SCS-THOMSON AM0608-020 !H [ RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS PRELIM INARY DATA . REFRACTORY/GOLD METALLIZATION • INTERNAL INPUT MATCHING ■ METAL/CERAMIC HERMETIC PACKAGE • P out = 20 W MIN. WITH 9.0 dB GAIN PIN CONNECTION DESCRIPTION


    OCR Scan     		PDF AM0608-020 AM0608-020

    TRANSISTOR 5DW

    Abstract: No abstract text available
    Text: SGS-THOMSON IU A M 0 9 1 2 -3 0 0 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . • . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAUCERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF AM0912-300 C125519 J1350G6F r-4050 TRANSISTOR 5DW