THYRISTOR ABB 5STP Search Results

thyristor Q 720

Abstract: thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200
Contextual Info: Phase Control and Bi-directionally Controlled Thyristors ABB Switzerland Ltd, Semiconductors The work-horse of power conversion remains vital and is ready to conquer new applications and setting new power records. Since its introduction in the 1960s, the phase control thyristor

GTO hvdc thyristor

Abstract: 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB
Contextual Info: Phase Control and Bi-directionally Controlled Thyristors ABB Semiconductors The work-horse of power conversion Since its introduction almost 50 years ago, the Phase Control Thyristor has been the back-bone of the high power electronics industry. Its field of application ranges from kW DC-drives

5STP06D2600

Contextual Info: Key Parameters VDSM = 2800 ITAVM = 590 ITRMS = 920 ITSM = 8000 VT0 = 0.92 rT = 0.780 V A A A V mΩ Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA 1020-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5STP24H2800

Abstract: ABB 5STP abb S 24H220 24H2600 24H2800
Contextual Info: Key Parameters VDSM = 2800 ITAVM = 2625 ITRMS = 4120 ITSM = 43000 VT0 = 0.85 rT = 0.160 V A A A V mΩ Phase Control Thyristor 5STP 24H2800 Doc. No. 5SYA 1047-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

ABB 5STP 12

Abstract: 5STP03A1600
Contextual Info: Key Parameters VDSM = 1800 ITAVM = 325 ITRMS = 510 ITSM = 5000 VT0 = 0.89 rT = 0.850 V A A A V mΩ Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA 1032-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

ABB 5STP 16F2600

Abstract: 5STP 16F2600 16F2200 5STP 16F2800 16F2800 ABB 5STP 12 5STP16F2200
Contextual Info: Key Parameters VDSM = 2800 ITAVM = 1580 ITRMS = 2480 ITSM = 18000 VT0 = 0.82 rT = 0.370 V A A A V mΩ Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA 1022-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

21F1400

Abstract: 5STP21F1200 abb 26000
Contextual Info: Key Parameters VDSM = 1400 ITAVM = 2250 ITRMS = 3530 ITSM = 25000 VT0 = 0.75 rT = 0.157 V A A A V mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA 1023-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5STP 07D1200

Abstract: 5STP 07D1600 5STP07D1600 07d18
Contextual Info: Key Parameters VDSM = 1800 ITAVM = 700 ITRMS = 1090 ITSM = 9000 VT0 = 0.80 rT = 0.540 V A A A V mΩ Phase Control Thyristor 5STP 07D1800 Doc. No. 5SYA 1027-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: Key Parameters VDSM = 1800 ITAVM = 325 510 ITRMS = ITSM = 5000 VT0 = 0.89 = 0.850 rT V A A A V mΩ Ω Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA 1032-01 August, 00 Features • Patented free-floating silicon technology • Low on-state and switching losses

thyristor ABB 5stp 18f1600

Contextual Info: Key Parameters VDSM = 1800 ITAVM = 1845 ITRMS = 2890 ITSM = 21000 VT0 = 0.83 rT = 0.230 V A A A V mΩ Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA 1028-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5stp18h4200

Abstract: 18H3600
Contextual Info: Key Parameters VDSM = 4200 ITAVM = 2075 ITRMS = 3260 ITSM = 32000 VT0 = 0.96 rT = 0.285 V A A A V mΩ Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA 1046-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

ABB 4600

Abstract: ABB 5STP 12 5STP12F4200 5STP 12F4200
Contextual Info: Key Parameters VDSM = 4200 ITAVM = 1225 ITRMS = 1920 ITSM = 15000 VT0 = 0.95 rT = 0.575 V A A A V mΩ Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA 1021-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5STP 27H1800

Abstract: 27H1200 27H1800
Contextual Info: Key Parameters VDSM = 1800 ITAVM = 3000 ITRMS = 4710 ITSM = 47000 VT0 = 0.88 rT = 0.103 V A A A V mΩ Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA 1048-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: Key Parameters VDSM = 4200 ITAVM = 425 ITRMS = 660 ITSM = 6400 VT0 = 1.00 rT = 1.500 V A A A V mΩ Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA 1025-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: VDSM = 2800 V ITAVM = 620 A ITRMS = 970 A ITSM = 8000 A VT0 = 0.92 V rT = 0.780 mΩ Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-04 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

07D18

Abstract: 5STP 07D1600
Contextual Info: VDSM = 1800 V ITAVM = 730 A ITRMS = 1150 A ITSM = 9000 A VT0 = 0.80 V rT = 0.540 mΩ Phase Control Thyristor 5STP 07D1800 Doc. No. 5SYA1027-05 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5STP04D5200

Abstract: 04D5200
Contextual Info: Key Parameters VDSM = 5200 ITAVM = 400 ITRMS = 628 ITSM = 5000 VT0 = 1.20 rT = 1.600 V A A A V mΩ Phase Control Thyristor 5STP 04D5200 Doc. No. 5SYA 1026-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: Key Parameters VDSM = 6500 ITAVM = 350 ITRMS = 550 ITSM = 4500 VT0 = 1.20 rT = 2.300 V A A A V mΩ Phase Control Thyristor 5STP 03X6500 Doc. No. 5SYA 1003-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

08G6500

Abstract: 5STP 08G6500
Contextual Info: Key Parameters VDSM = 6500 ITAVM = 815 ITRMS = 1270 ITSM = 11600 VT0 = 1.22 rT = 0.970 V A A A V mΩ Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA 1006-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: Key Parameters VDSM = 8500 ITAVM = 1150 ITRMS = 1806 ITSM = 35000 VT0 = 1.25 rT = 0.480 V A A A V mΩ Phase Control Thyristor 5STP 12N8500 Preliminary Doc. No. 5SYA 1044-01 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5STP42U6500

Abstract: 42u6200 6594
Contextual Info: Key Parameters VDSM = 6500 ITAVM = 4200 ITRMS = 6594 ITSM = 67500 VT0 = 1.13 rT = 0.185 V A A A V mΩ Phase Control Thyristor 5STP 42U6500 Preliminary Doc. No. 5SYA 1043-01 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5stp38n4000

Abstract: 38N4200 38n3
Contextual Info: Key Parameters VDSM = 4200 ITAVM = 3750 ITRMS = 5880 ITSM = 60000 VT0 = 0.95 rT = 0.130 V A A A V mΩ Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA 1012-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

c 30275

Abstract: 03A1600 5STP 03A1200
Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 325 A 510 A 5000 A 0.89 V 0.850 mΩ Ω Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA1032-01 Sep. 01 • Designed for traction, energy and industrial applications • Optimum power handling capability Blocking

06D2

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 620 A 970 A 8000 A 0.92 V 0.780 mΩ Ω Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications