TIC COL 02 Search Results

BUT12

Abstract: C-16 MT46V8M16 MT48LC4M16A2 25L128160
Contextual Info: ARM PrimeCell MultiPort Memory Controller PL175 Revision: r1p0 Technical Reference Manual Copyright 2002 ARM Limited. All rights reserved. ARM DDI 0230A ARM PrimeCell MultiPort Memory Controller (PL175) Technical Reference Manual Copyright © 2002 ARM Limited. All rights reserved.

Contextual Info: 13 12 10 M AT E R IA F NUMBER « OF COLUMNS tt OF DIFF PAIR DIM "A" MAX DIM ' B “ P TH 0 76X60-*010 10 20 26 .6 0 17.10 0.46 76460-*016 16 32 38 .0 0 28 .5 0 ±0.05 76460 0 - * 76460*020 10 20 26 .6 0 17.10 0.39 76 460-*026 16 32 38 .0 0 28 .5 0 ±0.05 * *

W3100

Abstract: ERC90M-02
Contextual Info: ERC90M-02 5A L O W LOSS SUPER H IG H SPEED RECTIFIER I Features • wmimtf&rnzntzvjm-ji'ru -/ Insulated package by fu lly m o ld in g . • feVp mmm&m Low V F Connection Diagram S u p e r high speed s w itc h in g . • Z f l'—t— tfLfti t z i S S i f ¡B tt

Z3.3

Contextual Info: I R atin g s and c h a r a c t e r is t ic s of F u ji I G BT 2 M B I 5 0 J —* 0 6 0 1. M BT Module (TEN TAT IVE ) O u tlin e Drawing U n it : sa * Isolation Voltage : AC2500V 1minute Z- <¿5.4 •O o Q C : |ii lí ■C3 I ! -I o , t .xH 3 <ï io i l !>;

272c

Abstract: 121-1001 Q0001 MIL-C-19500 1B80 IN4000 1N3993A 1N4000A DETAILS of ic 4071
Contextual Info: MIL SPECS î c | QDQ01ES DQOISTI 5 MIL-S-19500/272C NOTICE 1 5 F e b r u a r y 1988 NOTICE OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Diode, Silicon, V o l t a g e - R e g u l a t o r T y p e TX and NON-TX 1N3 9 9 3 A t h r o u g h 1N40 0 0 A and t h e R A

AM79C901A

Abstract: 79C901 TIC106
Contextual Info: PRELIMINARY Am79C901A HomePHY Single-Chip 1/10 Mbps Home Networking PHY DISTINCTIVE CHARACTERISTICS n Fully integrated 1 Mbps HomePNA Physical Layer PHY as defined by Home Phoneline Networking Alliance (HomePNA) specification 1.1 — Optimized for home networking applications

Contextual Info: QS@GDHDI6S` Ã Am79C901A HomePHY Single-Chip 1/10 Mbps Home Networking PHY DISTINCTIVE CHARACTERISTICS n Fully integrated 1 Mbps HomePNA Physical Layer PHY as defined by Home Phoneline Networking Alliance (HomePNA) specification 1.1 — Optimized for home networking applications

PAL 007 E

Abstract: PAL 007 B PAL 007 c PAL 007 a PAL 007 PAL 007 data sheet AM79C901JC AM79C940b remote control encoder decoder tic 136
Contextual Info: PRELIMINARY Am79C901 HomePHY Single-Chip 1/10 Mbps Home Networking PHY DISTINCTIVE CHARACTERISTICS n Fully integrated 1 Mbps HomePNA Physical Layer PHY as defined by Home Phoneline Networking Alliance (HomePNA) specification 1.0 — Optimized for home networking applications

TIC COL 02

Contextual Info: M T 4 C 1670/1 L 6 4 K X 16 D R A M I ^ K Z R O N 64K x 16 DRAM STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry standard xl6 pinouts, tim ing, functions and packages • High-performance, C M O S silicon-gate process

Contextual Info: SANKEN ELECTRIC CO LTD S5E D • 7^^0741 0QQ11BL Ô2L » S A K J Silicon PNP Epitaxial Planar Darlington ■Maximum Ratings Item Ta = 25°C Symbol Ratings Unit Collector-to-Base Voltage VCBO -1 2 0 V Collector-to-Emitter Voltage VCEO -1 2 0 V Emitter-to-Base Voltage

Contextual Info: SANKEN ELECTR IC CO LTD SS E » M STA43<Ì‘ • 7^0741 OOOllMS T?^ H S A K J Silicon NPN Triple Diffused Planar Darlington ■Maximum Ratings T a = 2 5 -c> t •¡i* I'i ’ 'S k kr ' iL ¿ R A , < .(„/«v i ; j ' R a tin g s • Jr ' J 1# k C o lle c to r-to -B a s e V o lta g e

HPR25

Abstract: AM79C901 circuit diagram of new holland fx 58
Contextual Info: P R E L IM IN A R Y AMD£I Am79C901 HomePHY1" Single-Chip 1/10 Mbps Home Networking PHY DISTINCTIVE CHARACTERISTICS • Fully integrated 1 Mbps HomePNA Physical Layer PHY as defined by Home Phoneline Networking Alliance (HomePNA) specification 1.1 — Optimized for home networking applications

Contextual Info: SIEMENS 4M X 16-Bit Dynamic RAM 4k & 8k Refresh hYB 3164160T -50/-60 HYB 3165160T -50/-60 P re lim in a ry In fo rm a tio n Low p o w e r d issip a tio n • 4 194 3 0 4 w o rd s by 16-bit o rg a n iz a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re

ELPIDA 512MB NOR FLASH

Abstract: MT46V16M16 TIC 122 Transistor datasheet 128M DDR SDR SDRAM samsung 0 micron NAND FLASH INTERCONNECT MT46V8M16 MT48LC4M16A2 PL176 MT28S4M16 Micron MT48LC4M16A2
Contextual Info: ARM PrimeCell MultiPort Memory Controller PL176 Revision: r0p1 Technical Reference Manual Copyright 2003 ARM Limited. All rights reserved. ARM DDI 0269A ARM PrimeCell MultiPort Memory Controller (PL176) Technical Reference Manual Copyright © 2003 ARM Limited. All rights reserved.

2AX SMD

Abstract: smd diode marking d06 MANUAL 1023N mcl d01 pal 002 S1021 smd diode UJ 64 A LR38516 hF 6591 ccd sharp
Contextual Info: SHARP SPEC No. I SSUE: E L 0 9 9 1 7 2 Sep. 19 1997 S P E C I F I C A T I O N S Product Type M od el N o. T ilin g IC 1 /4 ”35QK,1/3”350K/380K/450K p ix e ls CCD L R 3 8 5 1 6_ j&This s p e c ific a tio n s contains 37 pages including the cover and appendix.

4218160LE-60

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD 42S18160, 4 2 1 8 1 6 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ,uPD42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

UPD444

Abstract: UPD444-1 MPD444
Contextual Info: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION T h e /LfPD444 is a high-speed, lo w p o w e r s ilic o n gate C M OS 4 0 9 6 b it s ta tic R A M o rg a ­ n ize d 1 02 4 w o rd s b y 4 b its . I t uses DC stable s ta tic c ir c u itr y th ro u g h o u t and th e re ­

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jUPD42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE ★ Description The ¿¡PD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

SC11290

Abstract: sc11290cn SC1129 SC112 VP05
Contextual Info: SC11290 DTMF Transceiver With Call Progress Detection V SIERRA SEMICONDUCTOR 22-PIN DIP PACKAGE □ □ □ D T M F g e n e ra to r and receiv er E xcellen t sp eech im m u nity T ri-S ta te o u tp u ts 4 -b it h ex a ­ d ecim al fro m receiv er □ A C -C o u p led , internally-b iased

3R5S

Contextual Info: FUJI ;± m « i Fuji New Semiconductor Products 1800V/800A/1 ± * § S IG B T iy n .- A ' 1 M B I 8 0 0 P N MB - 1 8 0 IGBT Low loss • high speed switching IGBT Modules H 4^ JH Features * ¡ ¡¡REEv High voltage, high current • 7 ^ High speed sw itching

Contextual Info: f Z T SGS-THOMSON *•7#s SD1463 TCC0204-125 RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS • ■ . ■ ■ . 400 MHz 28 VOLTS EFFICIENCY 60% COMMON EMITTER GOLD METALLIZATION p 0UT = 125 W MIN. WITH 7.0 dB GAIN .400 .425 8LFL (M 168) X epoxy sealed O R D ER CODE

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n T h e /x P D 4 2 6 4 4 0 0 ,4 2 6 5 4 0 0 a re 1 6 ,7 7 7 ,2 1 6 w o rd s by 4 b its d y n a m ic C M O S R A M s. T h e fa s t p a g e m o d e c a p a b ility

EPM7128SQC100-7 pin out

Abstract: BITBLAST epm7128stc100-6 epm7064lc68-12 epm7128stc100 epm7192egm160-15 epm7032sti44-7 EPM7192SQI160-10 EPM7256EGM883 EPM7192SQC1607
Contextual Info: MAX 7000 Programmable Logic Device Family June 2003, ver. 6.6 Features. Data Sheet • ■ ■ ■ ■ ■ ■ f High-performance, EEPROM-based programmable logic devices PLDs based on second-generation MAX® architecture 5.0-V in-system programmability (ISP) through the built-in

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT / IP D 4 2 S 1 7 8 0 0 L , 4 2 1 7 8 0 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The ¿¡PD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode