TIP10 Search Results

T1P102

Contextual Info: bH TEXAS I N S T R -COPTO} Ï Ë J Ö lbl7ab 896-1726 TEXAS INSTR OPTO 0D3bö7D □ 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS _ J A N U A R Y 1 9 7 7 - RE V ISE D OCTO BER 1 9 84 • Designed for Complementary Use with TIP105, TIP106, TIP107

Contextual Info: TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP105, TIP106 and TIP107 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)

TIP100

Abstract: TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)

Tip100

Contextual Info: TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE=4v, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use

TIP107 Texas

Contextual Info: TEXAS INSTR -COPTO} "B 961726 b5 TEXAS IN S T R D eT| flit 1 75b Q03ba7t, 0 COPTOT 62C 3 6 8 7 6 TIP 105, TIP106, TIPI 07 P-N-P DARLINGTON CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 Designed for Complementary Use with TIPIOO, T IP 101, TIP102

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP100 TIP101 TIP102 NPN TIP105 TIP106 TIP107 PNP TO-220 Plastic Package Intended for use in Linear Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC

tip107

Abstract: TIP105
Contextual Info: TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

TLP100

Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP105/106/107

p107 to-220

Abstract: P102 P105 P107 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: @ S A N Y O SEMICONDUCTOR NPN TIP100 TIP101 TIP102 PNP TIP105 TIP106 TIP107 60-80-100 VOLTS, 8 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS HIGH CURRENT GAIN hFE = 4000 typ. @3V, 4A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @4A MONOLITHIC CONSTRUCTION WITH BUILT-IN

Contextual Info: MCC TM Micro Commercial Components TIP100 TIP101 TIP102
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • • Mounting Torgue: 5 in-lbs Maximum Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

Contextual Info: TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE=4v, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use

TIP105

Abstract: TIP-106 TIP107 TIP106 transistor TIP105 NPN Transistor VCEO 80V 100V DARLINGTON
Contextual Info: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 00/101/102

TIP100

Abstract: TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor
Contextual Info: NPN EPITAXIAL TIP100/101 /102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107

tip B 631 k

Abstract: TIP100 TIP101 TIP102 TIP105 TIP106 TIP107 TIP107 central
Contextual Info: Datasheet Central TIP100 TIP101 TIPI02 NPN TIPI05 TIPI06 TIP107 PNP Semiconductor Corp. SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

TIP107

Abstract: TIP106 TIP105 TIP-106
Contextual Info: TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

TIP102G

Abstract: TIP102 TIP101 TIP105G TIP106 TIP100 TIP100G TIP101G TIP105 TIP107
Contextual Info: TIP100, TIP101, TIP102 NPN ; TIP105, TIP106, TIP107 (PNP) TIP101, TIP102, TIP106 and TIP107 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Designed for general-purpose amplifier and low-speed switching applications. Features

Complementary Darlington Audio Power Amplifier

Abstract: TIP102 TIP107
Contextual Info: TIP102 TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER

TIP107

Abstract: IP105 tip106
Contextual Info: TIP105 TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP105, TIP106 and TIP107 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in TO-220 plastic package intented for use in power linear

TIP100

Abstract: TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with TIP105, TIP106 and TIP107 TO-220 PACKAGE TOP VIEW ● 80 W at 25°C Case Temperature

TIP 102 transistor

Abstract: transistor tip 107 Transistor tip 102
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE=4V, lc = 3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS

pnp darlington to-220 10a

Abstract: "Darlington Transistors" darlington power transistor TIP107 Darlington transistors
Contextual Info: TIP107 Power Darlington Transistors Feature: • PNP Plastic Power Darlington Transistors for Linear and Switching Applications. TO-220 Plastic Package Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector Dimensions Minimum Maximum A 14.42 16.51

TRANSISTOR Tip101-Tip106

Abstract: NPN bipolar junction transistors max hfe 2000 TIP100-D TIP106 TIP107 1N5825 MSD6100 TIP100 TIP101 TIP102
Contextual Info: MOTOROLA Order this document by TIP100/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN TIP100 TIP101* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —

D 1878 TRANSISTOR

Contextual Info: TtP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS CopyrlaW 0 1997, Power Innovations Llmltsd. UK_ AU G U ST 1978 - R E V IS E D M A R C H 1997 • D esigned lo r Com plem entary U se with TIP100, TIP101 and TIP102

Contextual Info: TIP105 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50u° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k