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    TIP161 TRANSISTOR Search Results

    TIP161 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TIP161 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 TIP161 Silicon NPN Darlington Power Transistor DESCRIPTION 1 • Collector-Emitter Sustaining Voltage: VCEo(suS)=350V(Min) • Low Collector-Emitter Saturation Voltage-


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    PDF TIP161

    TIP162

    Abstract: diode by205 by205 diode BY205-600 IRF140 TIP160 TIP161
    Text: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)


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    PDF TIP160, TIP161, TIP162 OT-93 TIP161 TIP160 TIP162 diode by205 by205 diode BY205-600 IRF140 TIP160 TIP161

    Untitled

    Abstract: No abstract text available
    Text: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)


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    PDF TIP160, TIP161, TIP162 OT-93 TIP160 TIP161 curr30

    TIP162

    Abstract: diode by205 tip160 US Global Sat tip162 to-3p
    Text: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)


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    PDF TIP160, TIP161, TIP162 global/pdfs/TSP1203 OT-93 TIP160 TIP161 diode by205 US Global Sat tip162 to-3p

    BY205-600

    Abstract: TIP162 by205 diode BY205/600 diode by205 TIP160 by205 IRF140 TIP161 TIP161 transistor
    Text: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)


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    PDF TIP160, TIP161, TIP162 OT-93 TIP161 TIP160 BY205-600 TIP162 by205 diode BY205/600 diode by205 TIP160 by205 IRF140 TIP161 TIP161 transistor

    diode by205

    Abstract: TIP162 by205 by205 diode BY205/600 BY205-600 IRF140 TIP160 TIP161
    Text: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO


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    PDF TIP160, TIP161, TIP162 OT-93 TIP160 TIP161 TIP16ot diode by205 TIP162 by205 by205 diode BY205/600 BY205-600 IRF140 TIP160 TIP161

    TIP162

    Abstract: automotive ignition tip162 TIP160 TIP161 npn DARLINGTON 10A tip162 to-3p
    Text: Inchange Semiconductor Product Specification TIP160/161/162 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・DARLINGTON ・10A rated continuous collector current APPLICATIONS ・For use in automotive ignition,switching and motor control applications


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    PDF TIP160/161/162 TIP160 TIP161 TIP162 TIP162 automotive ignition tip162 TIP160 TIP161 npn DARLINGTON 10A tip162 to-3p

    automotive ignition tip162

    Abstract: TIP162 TIP160 DARLINGTON 10A TIP161 tip162 to-3p
    Text: SavantIC Semiconductor Product Specification TIP160/161/162 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·10A rated continuous collector current APPLICATIONS ·For use in automotive ignition,switching and motor control applications


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    PDF TIP160/161/162 TIP160 TIP161 TIP162 automotive ignition tip162 TIP162 TIP160 DARLINGTON 10A TIP161 tip162 to-3p

    R3381

    Abstract: R3498 R3381-S a101 transistor BDW85-S buv49 transistor 1015 TIPL763 TIC263D 883 transistor
    Text: CIRCUIT PROTECTION PRODUCTS February, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team SOT-93 Packaged Power Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 - Mold Compound Change


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    PDF OT-93 BLBF40 MP150SG, MG15G-1040R, cusV47-S BUV48 BUV48A BUV48A-S R3381 R3498 R3381-S a101 transistor BDW85-S buv49 transistor 1015 TIPL763 TIC263D 883 transistor

    r3381

    Abstract: R3498 buv49 MP150s tipl763 TIC263M transistor BD245 BDW85-S buv48s BD250C-S
    Text: CIRCUIT PROTECTION PRODUCTS February, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team SOT-93 Packaged Power Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 - Mold Compound Change


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    PDF OT-93 BLBF40 MP150SG, MG15G-1040R, cusV47-S BUV48 BUV48A BUV48A-S r3381 R3498 buv49 MP150s tipl763 TIC263M transistor BD245 BDW85-S buv48s BD250C-S

    TIC106D equivalent

    Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
    Text: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers


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    PDF O-220, OT-93 2M/TSP0711 TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent

    TIC106M SCR

    Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
    Text: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers


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    PDF O-220, OT-93 2M/TSP0904 TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent

    MJ3001 equivalent

    Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc


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    PDF MJ2955 2N3055) MJ2955A 2N3055A) MJ2500 MJ2501* MJ3000 MJ3001* TIP73B TIP74 MJ3001 equivalent MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement

    motorola MJ15001

    Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —


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    PDF MJ15001 MJ15002 MJ15002 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A motorola MJ15001 BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139

    2SC105

    Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp


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    PDF 2N4918, 2N4919, 2N4920 2N4921 2N4923* TIP73B TIP74 TIP74A TIP74B TIP75 2SC105 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent

    All similar transistor 2sa715

    Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc


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    PDF BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244C* TIP73B TIP74 All similar transistor 2sa715 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference

    BU108

    Abstract: 2SC1629 equivalent BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:


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    PDF BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100

    2SA1046

    Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.


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    PDF BUX85 BUX85 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SA1046 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100

    PLL IC 566

    Abstract: automotive ignition tip162 TIP162 TIP161 transistor TIP160 TIP161 100 amp npn darlington power transistors TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
    Text: Æ&MOS PEC NPN SILICON POWER DARLINGTON TRANSISTORS NPN TIP160 .designed for use in automotive ignition, switching and motor con­ trol applications. FEATURES: TIP161 * Collector-Emitter Sustaining VoltageV ceo «sus > = 320 V Min -TIP160 = 350 V (Min)-TIP161


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    PDF -TIP160 TIP161 TIP162 TIP160 TIP161 TIP160 TIP162 15CfC PLL IC 566 automotive ignition tip162 TIP161 transistor 100 amp npn darlington power transistors TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON

    TIP162

    Abstract: BY205-600 diode by205 by205 diode tip160 TIP161 tip162 to-3p
    Text: e Ifi AN SYS TIPI 60, TIP161, TIP162 NPN SILICON POWER DARLINGTONS HiCTRONICS LIMITED SOT-93 PACKAGE TOP VIEW 50 W at 25°C Case Temperature C C 1 ^ CM 15 A Peak Collector Current B C o 10 A Continuous Collector Current 3 ^ \ O Maximum VCE(Sat) of 2.8 V at lc = 6.5 A


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    PDF OT-93 TIP160 TIP161 TIP162 TIP162 OT-93 BY205-600 diode by205 by205 diode tip162 to-3p

    automotive ignition tip162

    Abstract: tipi transistor equivalent 369-41 369-42 equivalent to tip162 P6019 P6020 TIP160 tektronix p6019 tipi transistor
    Text: TEXAS INSTR ÌOPTO> 8961726 TEXAS IN STR 003^.^30 dìT| OPTO 62C 36 93 8 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 198 4 50 W at 100°C Case Temperature T—33-29 10 A Rated Continuous Collector Current


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    PDF T-33-29 218AA TIP160 TIP161 TIP162 TIP160, TIP161, TIP162 automotive ignition tip162 tipi transistor equivalent 369-41 369-42 equivalent to tip162 P6019 P6020 tektronix p6019 tipi transistor

    c2689

    Abstract: C2689 equivalent automotive ignition tip162 T1P160 equivalent to tip162
    Text: TEXAS INSTR ÌOPTO> d ìT | 8961 72 6 TEXAS INSTR OPTO 003^.^30 62C 36938 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V ISE D O C T O B E R 1 9 84 50 W at 100°C Case Temperature T-33-29 10 A Rated Continuous Collector Current


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    PDF T-33-29 TIP160, TIP161, TIP162 c2689 C2689 equivalent automotive ignition tip162 T1P160 equivalent to tip162

    Untitled

    Abstract: No abstract text available
    Text: TIPI 60, TIPI 61, TIPI 62 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • 50 W at 25°C Case Temperature • 10 A Continuous Collector Current • 15 A Peak Collector Current • Maximum VCE Satj of 2.8 V at lc = 6.5 A


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    PDF OT-93 TIP160 TIP161 TIP162

    Tip 162

    Abstract: TIP150 T1P151 TIP151 TIP152 TIP161 TIP162 tipi transistor ScansUX225 1973 transistor
    Text: TIPI 50, TIPI 51, TIPI 52 NPN SILICON POWER DARLINGTONS JU N E 1973 • R E V IS E D M AY 1995 • 80 W at 25°C Case Temperature • 7 A Continuous Collector Current • 10 A Peak Collector Current • Maximum VcE sat of 2 V at Ic = 5 A • ■cexcsus) 7 A at rated V(BRjCEO


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    PDF to-220 TIP150 TIP151 TIP152 TCD160AD TCP160AC Tip 162 T1P151 TIP161 TIP162 tipi transistor ScansUX225 1973 transistor