TK12 Search Results

tk12a65d

Abstract: tk12a65
Contextual Info: TK12A65D MOSFETs Silicon N-Channel MOS π-MOS TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TK12J60U Category: Transistors /Power MOSFET/Nch 500V<VDSS 700V

Contextual Info: TK12X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK12X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.38 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)

K12J55D

Abstract: SC-65 tk12j55
Contextual Info: TK12J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12J55D Switching Regulator Applications 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Symbol Rating Unit Drain-source voltage VDSS 550 V Gate-source voltage

K12A50D

Abstract: TK12A50D K12a50 K12A50D* VDD400 K*A50D
Contextual Info: TK12A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK12A50D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.45 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0S (標準)

K12A60U

Abstract: TK12A60U k12a60 code MCV marking MCV
Contextual Info: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)

K12A53D

Abstract: TK12A53D
Contextual Info: TK12A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK12A53D ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.5Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)

TK12D60U

Contextual Info: TK12D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12D60U Switching Regulator Applications Unit: mm 10.0±0.3 Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)

K12A50D

Abstract: K12a50 tk12a50 toshiba marking code transistor k12a50d TK12A50D K*A50D K12A TK-12A
Contextual Info: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)

TK11100CS

Abstract: TK111xxCS TK11100C TK11100 SOT23-5 regulator code 02 TK11100CS-G TK121
Contextual Info: POWER&RF Positive LDO regulator IC 正出力低飽和レギュレータIC TK111xxCS-G,TK11100CS-G,TK121xxCS-G DESCRIPTION The TK111xxCS-G, TK11100CS-G and TK121xxCS-G are low dropout linear regulators with on/off control, which can supply 200mA load current.

Contextual Info: TK12 M ITEL Phase Control Thyristor SEMICONDUCTOR Supersedes O ctober 1995 version, DS4252 - 3.2 DS4252 - 3.3 APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS V DRM _. 2000V 75A Jt AV 1400A TSM

Contextual Info: TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)

Contextual Info: TK12E60W MOSFETs Silicon N-Channel MOS DTMOS TK12E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.43 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)

Contextual Info: TK12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A45D Switching Regulator Applications Unit: mm (typ.) Low drain-source ON-resistance: RDS (ON) = 0.43 High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)

Contextual Info: TK12A65D MOSFETs Silicon N-Channel MOS π-MOS TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)

Contextual Info: TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK12J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V 1.0 0.3 0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. Unit

K12A55D

Contextual Info: TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII TK12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)

Contextual Info: TK12J60W MOSFETs Silicon N-Channel MOS DTMOS TK12J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)

K12A60U

Abstract: K12A k12a60
Contextual Info: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)

Contextual Info: TK12Q60W MOSFETs Silicon N-Channel MOS DTMOS TK12Q60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

TK12P60W

Contextual Info: TK12P60W MOSFETs Silicon N-Channel MOS DTMOS TK12P60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK12E60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12E60U Switching Regulator Applications Unit: mm 10± 0.3 2.74 13.9± 0.5 25°C) Rating Drain-source voltage VDSS 600 V Gate-source voltage VGSS r30 V (Note 1) ID 12 Pulse (t 1 ms)

12N05L

Abstract: 748U STK12N
Contextual Info: SGS-THOMSON ’[LiCTïMOOS * t7 TK12N05L TK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TK 12N 05L S TK12N 06L . . . . . . . V dss R D S o n Id 50 V 60 V 0 .1 5 U 0 .1 5 Q 12 A 12 A AVALANC HE RUG G EDNESS TECHNO LO G Y