TKAD Search Results

Thomas Betts DIN

Abstract: Thomas Betts DIN RAIL TKAD TK2D-48-AG 4TK2-48 SnapTrack thomas and betts ag
Contextual Info: Interface Modules SNAPTRACK CHANNEL DESCRIPTION SNAPTRACK® channel can be mounted on standard DIN rails or a series rail when used with TKAD. Rails not included. SNAPTRACK® channel is a nonconductive, rigid extruded PVC chassis used for mounting RDI

TKAD20C

Abstract: TKAD 104462 Tektronix 464
Contextual Info: TEKTRONIX INC/ INTEGRATED OSE D | ñT0hl24 250 MSPS 8-bit A/D Converter with Track-and-Hold □□GD1DÛ 2 | TKAD20C Description Features The TKAD20C is a high speed, 8 bit, fully parallel Analog to Digital Converter with strobed comparators, latched outputs and

TKAD10

Abstract: 104462
Contextual Info: TEKTRONIX INC / MELECS MbE J> WË fiTOblTS 0 0 0 0 2 3 7 3 • T E K N T-5I-ÍC-C8 500 MSPS 8-bit A/D Converter with Track-and-Hold TKAD10C Description Features The TKAD10 is a high speed, 8 bit, fully parallel Analog to Digital Converter with strobed comparators,

104462

Contextual Info: T E K T R O N I X INC/ M E LE CS MbE D • Ô^OblTS Q00QS53 1 ■ TEKtl T - 5 \ - i 0 ~ 0 % 250 MSPS 8-bit A/D Converter with Track-and-Hold TKAD20C Description Features The TKAD20C is a high speed, 8 bit, fully parallel Analog to Digital Converter with strobed comparators, latched outputs and

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 SNAPTRACK CHANNEL D e s c r ip t io n SNAPTRACK Channel can be m ounted on standard DIN rails or A Series rail when used with TKAD. Rails not included. SNAPTRACK Channel is a nonconductive, rigid extruded PVC chassis used fo r m ounting socket

GM71C4403CJ60

Contextual Info: @ LG Semicon. Co. LTD Description Features • 1,048,576 Words x 4 Bit Organization • Extended Data Out Mode Capability • Single Power Supply 5V ± 10% • Fast Access Time & Cycle Time The GM71C4403C is the new generation dynamic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w o rd s x 4 b it.

Contextual Info: 78EE01PS 'ON 9NIMVMQ -fi-#m^ W 1 0 2 2 ~ y y r j\ / ) ( 5 / 4 M3 X 6 9 ( £ fa 2 — y 7 r ;i/ ) ( y 4 M3 8 s \ 'h 2 — y + T J 1/ ^ s / + M3 7 •0£'o' y h fa t 2 .c co t |->£ (i fa C co ih3& 0 D 0F -0 -212E (03 .O S ) . O m — y Jr ) 1/ >(s/ 4 1 2

M69KB128AA

Abstract: BCR10
Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

cr1 5 p26z

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ

BCR100

Contextual Info: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:

Contextual Info: K1C3216B8E UtRAM2 32Mb 2M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

Contextual Info: K1C6416B2D UtRAM2 64Mb 4M x 16 bit UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

7MBR20SA060

Abstract: Fuji PLC fbii 1251C tr aait
Contextual Info: M il «MMtoMr uÊué fai ih* mMutoc «trina purpMM wfchoi* iMMprw «»ritMn contati «I fu Ehculc Co. Ud Th« nuM'W «Ad ha inlotmcMin bw«Vi it ih* ixeptri/ Uni. o* <fWcl«Md «n *ny w»y whaMMM« fer Bx um at my fuÿflacrcQ i (.«JTneysUfliKfwUfwr mmadutMLcochà

UtRAM Density

Abstract: D513
Contextual Info: Preliminary UtRAM2 K1C6416B8E 64Mb 4M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Contextual Info: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV UHJDUGLQJ WKH 6SDQVLRQ SURGXFW V GHVFULEHG KHUHLQ (DFK SURGXFW GHVFULEHG

Contextual Info: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV UHJDUGLQJ WKH 6SDQVLRQ SURGXFW V GHVFULEHG KHUHLQ (DFK SURGXFW GHVFULEHG

The 555 Timer Applications Sourcebook

Abstract: hp 530 motherboard circuit and solution 16C854 hp laptop motherbaords 16750 UART AD128 4 CHANNEL QUAD CHANNEL 1000W POWER AMPLIFIER omnix N 200 ST hp 530 motherboard power supply solution uart 16c650
Contextual Info: Source ISO 9001 Formerly IN D U S T R IA L CO M PUTER SOURCE ICS Advent: Leading From Strength For over fifteen years, ICS Advent out of every one of our product has leveraged solid technical offerings. strengths, extensive applications Today, ICS Advent is a leading

midtex relay

Abstract: agastat ssc 22 rdi 214bs AGASTAT RELAY Tyco Electronics MIDTEX 158 Flammability-UL94V-0 midtex relays RB1-AG 2-1437683-3 telco 64 pin connector RELAY SCHRACK 10A 250V
Contextual Info: BUCHANAN Terminal Blocks Note: All part numbers are RoHS Compliant. Table of Contents—Interface Module Systems Overview Catalog Numbering Code ………………………………………………………196 Interface Modules ………………………………………………………………………197-204

Contextual Info: GMM7401010CS/SG-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 WORDS x 40 BIT CMOS DYNAMIC RAM MODULE Features The GMM7401010CS/SG is an 1M x 40 bits Dynamic RAM MODULE which is assembled 10 pieces o f 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both

SMD MARKING CODE A20

Abstract: ic DPD SCR FIR 3 D A22 SMD MARKING CODE A22 SMD CODE SCR IC CHIP smd transistor marking A11 smd code marking A8 diode smd diode code WP SMD MARKING CODE A12
Contextual Info: Data Sheet, V1.5, May 2005 HYE18P128160AF-9.6 HYE18P128160AF-12.5 HYE18P128160AF-15 S y n c h r o n o u s B u r s t C e l l u l a r R A M TM 1 . 5 G CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-5 Published by Infineon Technologies AG,

BCR100

Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc

Contextual Info: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAMTM 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.70V–1.95V VCC 1.70V–3.30V VCCQ1

DQ100

Abstract: transistor d514
Contextual Info: Rev. 1.0, Apr. 2010 K1C5616BKB 256Mb B-die UtRAM2 Multiplexed Synchronous Burst Uni-Transistor Random Access Memory. 16M x16bit datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed