TKXC Search Results

16mb HIGH-SPEED ASYNCHRONOUS SRAM

Abstract: IBM041816CHLBC IBM043616CHLBC SA37T
Contextual Info: . IBM043616CHLBC IBM041816CHLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation

SA37T

Abstract: cq 721 IBM041816CBLBC IBM043616CBLBC
Contextual Info: . IBM043616CBLBC IBM041816CBLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation

K7D803671B-HC33

Abstract: K7D803671B-HC30 K7D801871B-HC35 K7D801871B-HC37 K7D803671B K7D803671B-HC25 K7D803671B-HC35 K7D803671B-HC37
Contextual Info: K7D803671B K7D801871B 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 -Initial document. July. 2000 Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance Rev. 0.2

XRT6166CP-F

Contextual Info: XR-T6166 .the analog plus company TM Codirectional Digital Data Processor June 1997–3 APPLICATIONS FEATURES D CCITT G.703 Compliant 64kbps Codirectional Interface D Low Power CMOS Technology D All Receiver and Transmitter Inputs and Outputs are TTL Compatible

Contextual Info: XR-T6165 ¿E’ E X q R Codirectional Digital Data Processor .the analog p lu s com pany IP' /äSWSi*1 May 1997-3 FEATURES APPLICATIONS Low Power CMOS Technology CCITT G.703 Compliant 64kbps Codirectional Interface All Receiver and Transmitter Inputs and Outputs are

K7D163674B

Contextual Info: K7D163674B K7D161874B 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Oct. 2003 Advance Rev. 0.1 Change JTAG DC OPERATING CONDITONS/AC TEST CONDITIONS -to support 1.8~2.5V VDD, change some items.

SRAM 8T

Contextual Info: Preliminary K7D323674C K7D321874C 1Mx36 & 2Mx18 SRAM 36Mb DDR SRAM Specification 153BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

CXK77Q18162GB

Abstract: CXK77Q18162GB-25 CXK77Q18162GB-27 CXK77Q18162GB-3 CXK77Q36162GB CXK77Q36162GB-25 CXK77Q36162GB-27 CXK77Q36162GB-3
Contextual Info: SONY CXK77Q36162GB / CXK77Q18162GB 16Mb DDR1 HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 25/27/3 Preliminary Description The CXK77Q36162GB (organized as 524,288 words by 36 bits) and the CXK77Q18162GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

AN-81 national

Abstract: LM378 12v stereo amplifiers with tone controls LM378 data sheet lm1820 LM378 equivalent TAPEHEAD fm receiver circuit using ic with all component d Lm1820 and application note 32SN2F1-30
Contextual Info: National Semiconductor Application Note 147 Jim Sherwin June 1975 INTRODUCTION The recent availability of a broad line of truly high-performance consumer integrated circuits makes it possible to construct a high quality low noise low distortion and low cost

1P 2F MARKING

Contextual Info: ADVANCE |v i i c 2 5 6 K x 1 8 /1 2 8 K x 36 3 . 3 V Vod, HSTL. PIPELINED C L A Y M O R E SRAM :r o n R M h tt. U I V I U M T57L256H 18P M T57L128H 36P d FEATURES • • • • • • • • • • • • • • • • • • • • • Fast cycle times: 4.4ns, 5ns, 5.5ns, 6ns and 7ns

murata cfu455e

Abstract: CFU455E Murata CDBM455C7 7BRE-7437Z CFSK107M3 TK10931V tk10931 2sc945 2SC1675 tkxn22160bu
Contextual Info: アプリケーションマニュアル 通信機用 AM/FM IF ICのご紹介 TK10931V CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

K7D161871B-HC30

Abstract: K7D163671B-HC33 K7D163671B-HC37
Contextual Info: Advance 512Kx36 & 1Mx18 SRAM K7D163671B K7D161871B Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3

MCM63R836

Abstract: MCM64E836 MPC7450 Signal Path Designer
Contextual Info: Freescale Semiconductor, Inc. Order Number: AN2182/D Rev. 0, 8/2001 Freescale Semiconductor, Inc. Semiconductor Products Sector Application Note Setting the Sample Points for the MPC7450 L3 Cache Michael Everman RISC Applications risc10@email.sps.mot.com

IBM0418A4CFLBB

Abstract: IBM0418A8CFLBB IBM0436A4CFLBB IBM0436A8CFLBB
Contextual Info: . IBM0418A8CFLBB IBM0418A4CFLBB Preliminary IBM0436A8CFLBB IBM0436A4CFLBB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • CMOS Technology • HSTL Outputs

78H15

Contextual Info: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M

rt6164

Abstract: 1PXF transformer
Contextual Info: XR-T61 66 C'EXAR [.the a n a lo g plu s Codirectional Digital Data Processor com pan y J M June 1997-3 APPLICATIONS FEATURES • Low Power CMOS Technology • • All Receiver and Transmitter Inputs and Outputs are TTL Compatible CCITT G.703 Interface •

K7D803671B

Abstract: K7D801871B-HC25 K7D801871B-HC30 K7D801871B-HC33 K7D803671B-HC25 K7D803671B-HC30 K7D803671B-HC33
Contextual Info: K7D803671B K7D801871B Preliminary 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. Rev. 0.0 History -Initial document. Draft Data July. 2000 Remark Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance

Contextual Info: SONY CXK77Q36162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 512K x 36 Description The CXK77Q36162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer

hc40 3p

Abstract: K7D161871M-HC40 tkxc 153-FCBGA-1422
Contextual Info: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M

Contextual Info: XR-T6165 .the analog plus company TM Codirectional Digital Data Processor May 1997–3 FEATURES APPLICATIONS D Low Power CMOS Technology D CCITT G.703 Compliant 64kbps Codirectional Interface D All Receiver and Transmitter Inputs and Outputs are TTL Compatible

murata cfu455e

Abstract: tk10931 toko 7BRE7437Z TK10931V TOKO tkxc 2SC1675 CFU455E Murata CDBM455C7 CFSK107M3 7BRE-7437Z
Contextual Info: アプリケーションマニュアル 通信機用 AM/FM IF ICのご紹介 TK10931V CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

CXK77L18162GB

Abstract: CXK77L18162GB-25 CXK77L18162GB-27 CXK77L18162GB-3
Contextual Info: SONY CXK77L18162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 1M x 18 Description The CXK77L18162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer

K7D161871M-HC40

Abstract: r1250 535BB1
Contextual Info: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M

diode F4 3J

Abstract: MCM64E918FC4.0 MCM64E836 MCM64E918
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8MB Double Data Rate HSTL I/O Fast SRAM The MCM64E918 / MCM64E836 are 8M–bit pipelined burst synchronous late write fast static RAMs designed to provide very high data bandwidth in secondary cache applications. The MCM64E918 organized as 512K words by 18 bits wide